HfO2-Based RRAM: Electrode Effects, Ti/HfO2 Interface, Charge Injection, and Oxygen (O) Defects Diffusion Through Experiment and Ab Initio Calculations

We investigate in detail the effects of metal electrodes on the switching performance and conductive filament (CF) stability of HfO 2 -based RRAM. The current- voltage characteristics of the devices exhibit different electrodedependent RESET profiles which we attempt to clarify. With the insight fro...

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Veröffentlicht in:	IEEE transactions on electron devices 2016-01, Vol.63 (1), p.360-368
Hauptverfasser:	Traore, Boubacar, Blaise, Philippe, Vianello, Elisa, Perniola, Luca, De Salvo, Barbara, Nishi, Yoshio
Format:	Artikel
Sprache:	eng
Schlagworte:	Electrodes Hafnium compounds Performance evaluation Stability criteria Switches Thermal stability
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