Low-Temperature Bonded GaN-on-Diamond HEMTs With 11 W/mm Output Power at 10 GHz

We report recent progress on GaN-on-diamond high electron mobility transistors (HEMTs) fabricated using a low-temperature device-transfer process. The devices were first fabricated on a GaN-on-SiC epitaxial wafer and were subsequently separated from the SiC and bonded onto a high-thermal-conductivit...

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