A Charge Transfer Model for CMOS Image Sensors
Based on the thermionic emission theory, a charge transfer model has been developed which describes the charge transfer process between a pinned photodiode and floating diffusion (FD) node for CMOS image sensors. To simulate the model, an iterative method is used. The model shows that the charge tra...
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| Veröffentlicht in: | IEEE transactions on electron devices 2016-01, Vol.63 (1), p.32-41 |
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| creator | Liqiang Han Suying Yao Theuwissen, Albert J. P. |
| description | Based on the thermionic emission theory, a charge transfer model has been developed which describes the charge transfer process between a pinned photodiode and floating diffusion (FD) node for CMOS image sensors. To simulate the model, an iterative method is used. The model shows that the charge transfer time, barrier height, and reset voltage of the FD node affect the charge transfer process. The corresponding measurement results obtained from two different test chips are presented in this paper. The model also predicts that other physical parameters, such as the capacitance of the FD node and the area of the photodiode, will affect the charge transfer. Furthermore, the model can be extended to explain the pinning voltage measurement method and the feedforward effect. |
| doi_str_mv | 10.1109/TED.2015.2451593 |
| format | Article |
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P.</creator><creatorcontrib>Liqiang Han ; Suying Yao ; Theuwissen, Albert J. P.</creatorcontrib><description>Based on the thermionic emission theory, a charge transfer model has been developed which describes the charge transfer process between a pinned photodiode and floating diffusion (FD) node for CMOS image sensors. To simulate the model, an iterative method is used. The model shows that the charge transfer time, barrier height, and reset voltage of the FD node affect the charge transfer process. The corresponding measurement results obtained from two different test chips are presented in this paper. The model also predicts that other physical parameters, such as the capacitance of the FD node and the area of the photodiode, will affect the charge transfer. Furthermore, the model can be extended to explain the pinning voltage measurement method and the feedforward effect.</description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/TED.2015.2451593</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Charge transfer ; CMOS ; CMOS image sensors (CISs) ; Devices ; Doping ; Electric potential ; Feedforward ; Mathematical model ; Mathematical models ; Photodiodes ; pinned photodiode (PPD) ; Semiconductor device modeling ; Semiconductor process modeling ; Sensors ; Thermionic emission ; thermionic emission theory</subject><ispartof>IEEE transactions on electron devices, 2016-01, Vol.63 (1), p.32-41</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2016</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c394t-4387952129495030a4002339ce74ab283f0dfadae6f12ff56c4535958d490a903</citedby><cites>FETCH-LOGICAL-c394t-4387952129495030a4002339ce74ab283f0dfadae6f12ff56c4535958d490a903</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/7169526$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27903,27904,54737</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/7169526$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Liqiang Han</creatorcontrib><creatorcontrib>Suying Yao</creatorcontrib><creatorcontrib>Theuwissen, Albert J. P.</creatorcontrib><title>A Charge Transfer Model for CMOS Image Sensors</title><title>IEEE transactions on electron devices</title><addtitle>TED</addtitle><description>Based on the thermionic emission theory, a charge transfer model has been developed which describes the charge transfer process between a pinned photodiode and floating diffusion (FD) node for CMOS image sensors. To simulate the model, an iterative method is used. The model shows that the charge transfer time, barrier height, and reset voltage of the FD node affect the charge transfer process. The corresponding measurement results obtained from two different test chips are presented in this paper. The model also predicts that other physical parameters, such as the capacitance of the FD node and the area of the photodiode, will affect the charge transfer. Furthermore, the model can be extended to explain the pinning voltage measurement method and the feedforward effect.</description><subject>Charge transfer</subject><subject>CMOS</subject><subject>CMOS image sensors (CISs)</subject><subject>Devices</subject><subject>Doping</subject><subject>Electric potential</subject><subject>Feedforward</subject><subject>Mathematical model</subject><subject>Mathematical models</subject><subject>Photodiodes</subject><subject>pinned photodiode (PPD)</subject><subject>Semiconductor device modeling</subject><subject>Semiconductor process modeling</subject><subject>Sensors</subject><subject>Thermionic emission</subject><subject>thermionic emission theory</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2016</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNpdkDtPwzAQgC0EEqWwI7FEYmFJuPMr9liFApVadWiZLZPY0CpNit0O_Pu6asXAdDrdd6-PkHuEAhH083L8UlBAUVAuUGh2QQYoRJlryeUlGQCgyjVT7JrcxLhOqeScDkgxyqpvG75ctgy2i96FbNY3rs18H7JqNl9kk41N1YXrYh_iLbnyto3u7hyH5ON1vKze8-n8bVKNpnnNNN_lnKlSC4pUcy2AgeUAlDFdu5LbT6qYh8bbxjrpkXovZM0FE1qohmuwGtiQPJ3mbkP_s3dxZzarWLu2tZ3r99GgQgkSSiwT-vgPXff70KXrDJaCAqTdKlFwourQxxicN9uw2tjwaxDMUaBJAs1RoDkLTC0Pp5aVc-4PL1GmzyQ7AAthZ0U</recordid><startdate>20160101</startdate><enddate>20160101</enddate><creator>Liqiang Han</creator><creator>Suying Yao</creator><creator>Theuwissen, Albert J. P.</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>F28</scope><scope>FR3</scope></search><sort><creationdate>20160101</creationdate><title>A Charge Transfer Model for CMOS Image Sensors</title><author>Liqiang Han ; Suying Yao ; Theuwissen, Albert J. 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P.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Liqiang Han</au><au>Suying Yao</au><au>Theuwissen, Albert J. P.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A Charge Transfer Model for CMOS Image Sensors</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>2016-01-01</date><risdate>2016</risdate><volume>63</volume><issue>1</issue><spage>32</spage><epage>41</epage><pages>32-41</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract>Based on the thermionic emission theory, a charge transfer model has been developed which describes the charge transfer process between a pinned photodiode and floating diffusion (FD) node for CMOS image sensors. To simulate the model, an iterative method is used. The model shows that the charge transfer time, barrier height, and reset voltage of the FD node affect the charge transfer process. The corresponding measurement results obtained from two different test chips are presented in this paper. The model also predicts that other physical parameters, such as the capacitance of the FD node and the area of the photodiode, will affect the charge transfer. Furthermore, the model can be extended to explain the pinning voltage measurement method and the feedforward effect.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/TED.2015.2451593</doi><tpages>10</tpages></addata></record> |
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| source | IEEE Electronic Library (IEL) |
| subjects | Charge transfer CMOS CMOS image sensors (CISs) Devices Doping Electric potential Feedforward Mathematical model Mathematical models Photodiodes pinned photodiode (PPD) Semiconductor device modeling Semiconductor process modeling Sensors Thermionic emission thermionic emission theory |
| title | A Charge Transfer Model for CMOS Image Sensors |
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