Versatile Compact Model for Graphene FET Targeting Reliability-Aware Circuit Design

In this paper, we report on the development of a versatile compact model for graphene FETs (GFETs). Aging studies have been performed on the GFETs via bias stress measurements and aging laws were implemented in the compact model, including failure mechanisms in the GFETs. The failure mechanisms are...

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Veröffentlicht in:	IEEE transactions on electron devices 2015-03, Vol.62 (3), p.757-763
Hauptverfasser:	Mukherjee, Chhandak, Aguirre-Morales, Jorge-Daniel, Fregonese, Sebastien, Zimmer, Thomas, Maneux, Cristell
Format:	Artikel
Sprache:	eng
Schlagworte:	Aging Charge carrier processes chemical vapor deposition (CVD) compact model defects Degradation Engineering Sciences Graphene graphene FETs (GFETs) Logic gates Mathematical model Micro and nanotechnologies Microelectronics reliability Stress traps
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