Phenomenon of Drain Current Instability on p-GaN Gate AlGaN/GaN HEMTs

In this paper, an observation of drain current instability on p-GaN gate AlGaN/GaN HEMTs is reported. Contrary to the Schottky gate AlGaN/GaN HEMTs, which show stable and consistent I d -V d curves under different pulsed conditions, the I d -V d curves for p-GaN gate AlGaN/GaN HEMTs show a dispersio...

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Veröffentlicht in:	IEEE transactions on electron devices 2015-02, Vol.62 (2), p.339-345
Hauptverfasser:	Ting-Fu Chang, Tsung-Chieh Hsiao, Chih-Fang Huang, Wei-Hung Kuo, Suh-Fang Lin, Samudra, Ganesh S., Liang, Yung C.
Format:	Artikel
Sprache:	eng
Schlagworte:	AlGaN/GaN Aluminum gallium nitride Current measurement Gallium nitride HEMT HEMTs high voltage instability Logic gates MODFETs p-GaN gate Voltage measurement
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