Comparison of Simulation and Measurement of Gate Leakage Current in Metal/Al2O3/GaN/AlGaN/AlN/GaN Capacitors
We compare the simulations and measurements of gate leakage current in metal-insulator-semiconductor capacitors fabricated on standard AlGaN/GaN transistor layers. In the simulations, a fixed charge density at the interface between the Al 2 O 3 layer and the GaN cap layer was assumed for simplicity....
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| Veröffentlicht in: | IEEE transactions on electron devices 2014-10, Vol.61 (10), p.3558-3561 |
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| container_title | IEEE transactions on electron devices |
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| creator | Mehari, Shlomo Solomon Yalon, Eilam Gavrilov, Arkady Mistele, David Bahir, Gad Eizenberg, Moshe Ritter, Dan |
| description | We compare the simulations and measurements of gate leakage current in metal-insulator-semiconductor capacitors fabricated on standard AlGaN/GaN transistor layers. In the simulations, a fixed charge density at the interface between the Al 2 O 3 layer and the GaN cap layer was assumed for simplicity. The fixed charge layer (which depends on bias and device history) was obtained from capacitance-voltage measurements. The calculated tunneling current due to field emission from localized states in the GaN cap layer agreed with the experimental results. No additional leakage mechanisms had to be invoked. |
| doi_str_mv | 10.1109/TED.2014.2346461 |
| format | Article |
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In the simulations, a fixed charge density at the interface between the Al 2 O 3 layer and the GaN cap layer was assumed for simplicity. The fixed charge layer (which depends on bias and device history) was obtained from capacitance-voltage measurements. The calculated tunneling current due to field emission from localized states in the GaN cap layer agreed with the experimental results. No additional leakage mechanisms had to be invoked.</description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/TED.2014.2346461</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Aluminum gallium nitride ; Aluminum oxide ; Capacitance-voltage (C-V) characteristics ; Current measurement ; electron traps ; Gallium nitride ; GaN ; gate leakage ; interface phenomena ; Leakage currents ; Logic gates ; metal-insulator-semiconductor (MIS) devices ; quantum tunneling ; Tunneling</subject><ispartof>IEEE transactions on electron devices, 2014-10, Vol.61 (10), p.3558-3561</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) Oct 2014</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c427t-973cfe83fd14e4ab2f74667b2596679d2b0d9b4b04cdd651454ffc384b47a3243</citedby><cites>FETCH-LOGICAL-c427t-973cfe83fd14e4ab2f74667b2596679d2b0d9b4b04cdd651454ffc384b47a3243</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/6879476$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/6879476$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Mehari, Shlomo Solomon</creatorcontrib><creatorcontrib>Yalon, Eilam</creatorcontrib><creatorcontrib>Gavrilov, Arkady</creatorcontrib><creatorcontrib>Mistele, David</creatorcontrib><creatorcontrib>Bahir, Gad</creatorcontrib><creatorcontrib>Eizenberg, Moshe</creatorcontrib><creatorcontrib>Ritter, Dan</creatorcontrib><title>Comparison of Simulation and Measurement of Gate Leakage Current in Metal/Al2O3/GaN/AlGaN/AlN/GaN Capacitors</title><title>IEEE transactions on electron devices</title><addtitle>TED</addtitle><description>We compare the simulations and measurements of gate leakage current in metal-insulator-semiconductor capacitors fabricated on standard AlGaN/GaN transistor layers. In the simulations, a fixed charge density at the interface between the Al 2 O 3 layer and the GaN cap layer was assumed for simplicity. The fixed charge layer (which depends on bias and device history) was obtained from capacitance-voltage measurements. The calculated tunneling current due to field emission from localized states in the GaN cap layer agreed with the experimental results. No additional leakage mechanisms had to be invoked.</description><subject>Aluminum gallium nitride</subject><subject>Aluminum oxide</subject><subject>Capacitance-voltage (C-V) characteristics</subject><subject>Current measurement</subject><subject>electron traps</subject><subject>Gallium nitride</subject><subject>GaN</subject><subject>gate leakage</subject><subject>interface phenomena</subject><subject>Leakage currents</subject><subject>Logic gates</subject><subject>metal-insulator-semiconductor (MIS) devices</subject><subject>quantum tunneling</subject><subject>Tunneling</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kL1PwzAQxS0EEqWwI7FEYk7rj4sdj1UoBam0A2W2nMRGKfnCTgb-exwFsdzds3_vLD-E7gleEYLl-rR9WlFMYEUZcODkAi1IkohYBnGJFhiTNJYsZdfoxvtzkByALlCddU2vXeW7Nups9F41Y62HKijdltGb0X50pjHtMN3u9GCivdFf-tNE2ejcdF61ARt0vd7U9MjWO30I01wPk4oy3euiGjrnb9GV1bU3d399iT6et6fsJd4fd6_ZZh8XQMUQS8EKa1JmSwIGdE6tAM5FThMZmixpjkuZQ46hKEueEEjA2oKlkIPQjAJbosd5b--679H4QZ270bXhSUUSHvDwdxwoPFOF67x3xqreVY12P4pgNWWqQqZqylT9ZRosD7OlMsb84zwVEgRnvxKDcKc</recordid><startdate>201410</startdate><enddate>201410</enddate><creator>Mehari, Shlomo Solomon</creator><creator>Yalon, Eilam</creator><creator>Gavrilov, Arkady</creator><creator>Mistele, David</creator><creator>Bahir, Gad</creator><creator>Eizenberg, Moshe</creator><creator>Ritter, Dan</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>201410</creationdate><title>Comparison of Simulation and Measurement of Gate Leakage Current in Metal/Al2O3/GaN/AlGaN/AlN/GaN Capacitors</title><author>Mehari, Shlomo Solomon ; Yalon, Eilam ; Gavrilov, Arkady ; Mistele, David ; Bahir, Gad ; Eizenberg, Moshe ; Ritter, Dan</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c427t-973cfe83fd14e4ab2f74667b2596679d2b0d9b4b04cdd651454ffc384b47a3243</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><topic>Aluminum gallium nitride</topic><topic>Aluminum oxide</topic><topic>Capacitance-voltage (C-V) characteristics</topic><topic>Current measurement</topic><topic>electron traps</topic><topic>Gallium nitride</topic><topic>GaN</topic><topic>gate leakage</topic><topic>interface phenomena</topic><topic>Leakage currents</topic><topic>Logic gates</topic><topic>metal-insulator-semiconductor (MIS) devices</topic><topic>quantum tunneling</topic><topic>Tunneling</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Mehari, Shlomo Solomon</creatorcontrib><creatorcontrib>Yalon, Eilam</creatorcontrib><creatorcontrib>Gavrilov, Arkady</creatorcontrib><creatorcontrib>Mistele, David</creatorcontrib><creatorcontrib>Bahir, Gad</creatorcontrib><creatorcontrib>Eizenberg, Moshe</creatorcontrib><creatorcontrib>Ritter, Dan</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Mehari, Shlomo Solomon</au><au>Yalon, Eilam</au><au>Gavrilov, Arkady</au><au>Mistele, David</au><au>Bahir, Gad</au><au>Eizenberg, Moshe</au><au>Ritter, Dan</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Comparison of Simulation and Measurement of Gate Leakage Current in Metal/Al2O3/GaN/AlGaN/AlN/GaN Capacitors</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>2014-10</date><risdate>2014</risdate><volume>61</volume><issue>10</issue><spage>3558</spage><epage>3561</epage><pages>3558-3561</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract>We compare the simulations and measurements of gate leakage current in metal-insulator-semiconductor capacitors fabricated on standard AlGaN/GaN transistor layers. In the simulations, a fixed charge density at the interface between the Al 2 O 3 layer and the GaN cap layer was assumed for simplicity. The fixed charge layer (which depends on bias and device history) was obtained from capacitance-voltage measurements. The calculated tunneling current due to field emission from localized states in the GaN cap layer agreed with the experimental results. No additional leakage mechanisms had to be invoked.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/TED.2014.2346461</doi><tpages>4</tpages></addata></record> |
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| source | IEEE Electronic Library (IEL) |
| subjects | Aluminum gallium nitride Aluminum oxide Capacitance-voltage (C-V) characteristics Current measurement electron traps Gallium nitride GaN gate leakage interface phenomena Leakage currents Logic gates metal-insulator-semiconductor (MIS) devices quantum tunneling Tunneling |
| title | Comparison of Simulation and Measurement of Gate Leakage Current in Metal/Al2O3/GaN/AlGaN/AlN/GaN Capacitors |
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