Low-Temperature Bonded Cu/In Interconnect With High Thermal Stability for 3-D Integration

Low-temperature (170°C) Cu/In wafer-level and chip-level bonding for good thermal budget has been successfully developed for 3-D integration applications. For the well-bonded interconnect, Cu 2 In and Cu 7 In 3 phases with high melting temperature of 388.3°C and 632.2°C can be formed, indicating hig...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	IEEE transactions on electron devices 2014-04, Vol.61 (4), p.1131-1136
Hauptverfasser:	Chien, Yu-San, Huang, Yan-Pin, Tzeng, Ruoh-Ning, Shy, Ming-Shaw, Lin, Teu-Hua, Chen, Kou-Hua, Chiu, Chi-Tsung, Chuang, Ching-Te, Hwang, Wei, Chiou, Jin-Chern, Tong, Ho-Ming, Chen, Kuan-Neng
Format:	Artikel
Sprache:	eng
Schlagworte:	3-D integration Bonding Contact resistance Cu/In bonding Integrated circuit interconnections interconnect Intermetallic Substrates Thermal stability
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!