High-Mobility Pentacene-Based Thin-Film Transistors With Synthesized Strontium Zirconate Nickelate Gate Insulators

Strontium zirconate nickelate [(SZN); Sr 0.69 Ni 0.47 Zr 0.085 O 3.75 ] was synthesized through a sol-gel method by adding nickel (II) acetylacetone instead of titanium isopropoxide, which can effectively make thin films smoother and further act as gate insulators applied in pentacene-based thin-fil...

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Veröffentlicht in:	IEEE transactions on electron devices 2013-12, Vol.60 (12), p.4234-4239
Hauptverfasser:	Chang, Yu-Chi, Wei, Chia-Yu, Chang, Yen-Yu, Yang, Tsung-Yu, Wang, Yeong-Her
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Couplings Electronics Exact sciences and technology High mobility hopping rate Insulators Logic gates March-Hush equation Organic thin film transistors organic thin-film transistors (OTFTs) Pentacene Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices strontium zirconate nickelate (SZN) Transistors
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