Improvement in the Photo-Bias Stability of Zinc Tin Oxide Thin-Film Transistors by Introducing a Thermal Oxidized Film as a Hole Carrier Blocking Layer

This paper examined the morphological, structural, and electrical properties of thermal titanium oxide (TiO x ) films as a function of the physical thickness. All the thermal TiO x films were assigned to a TiO 2 chemical state irrespective of the film thickness. The thinner TiO 2 films (≤ 5 nm) show...

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Veröffentlicht in:	IEEE transactions on electron devices 2013-12, Vol.60 (12), p.4165-4172
Hauptverfasser:	Lee, Chang-Kyu, Hwang, Ah Young, Yang, Hoichang, Kim, Dae-Hwan, Bae, Jong-Uk, Shin, Woo-Sup, Jeong, Jae Kyeong
Format:	Artikel
Sprache:	eng
Schlagworte:	Bias stress instability Iron light stress instability Logic gates Oxidation Scattering Stress thermal oxidation Thermal stability Thin film transistors thin-film transistors (TFTs) titanium dioxide zinc tin oxide (ZTO)
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