Small-Signal Capacitance and Current Parameter Modeling in Large-Scale High-Frequency Graphene Field-Effect Transistors
An analytical model of the small-signal current and capacitance characteristics of radio frequency graphene field-effect transistors (GFETs) is presented. The model is based on explicit distributions of chemical potential in graphene channels (including ambipolar conductivity at high source-drain bi...
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| Veröffentlicht in: | IEEE transactions on electron devices 2013-06, Vol.60 (6), p.1799-1806 |
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| container_issue | 6 |
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| container_title | IEEE transactions on electron devices |
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| creator | Zebrev, G. I. Tselykovskiy, A. A. Batmanova, D. K. Melnik, E. V. |
| description | An analytical model of the small-signal current and capacitance characteristics of radio frequency graphene field-effect transistors (GFETs) is presented. The model is based on explicit distributions of chemical potential in graphene channels (including ambipolar conductivity at high source-drain bias) obtained in the framework of drift-diffusion current continuity equation solution. Small-signal transconductance and output conductance characteristics are modeled by considering the two modes of drain current saturation, including drift velocity saturation or electrostatic pinchoff. Analytical closed expression for the complex current gain and the cutoff frequency of high-frequency GFETs are obtained. This model allows to describe an impact of parasitic resistances, capacitances, interface traps on extrinsic current gain, and cutoff frequency. |
| doi_str_mv | 10.1109/TED.2013.2257793 |
| format | Article |
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I. ; Tselykovskiy, A. A. ; Batmanova, D. K. ; Melnik, E. V.</creator><creatorcontrib>Zebrev, G. I. ; Tselykovskiy, A. A. ; Batmanova, D. K. ; Melnik, E. V.</creatorcontrib><description>An analytical model of the small-signal current and capacitance characteristics of radio frequency graphene field-effect transistors (GFETs) is presented. The model is based on explicit distributions of chemical potential in graphene channels (including ambipolar conductivity at high source-drain bias) obtained in the framework of drift-diffusion current continuity equation solution. Small-signal transconductance and output conductance characteristics are modeled by considering the two modes of drain current saturation, including drift velocity saturation or electrostatic pinchoff. Analytical closed expression for the complex current gain and the cutoff frequency of high-frequency GFETs are obtained. This model allows to describe an impact of parasitic resistances, capacitances, interface traps on extrinsic current gain, and cutoff frequency.</description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/TED.2013.2257793</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Capacitance ; Cutoff frequency ; Equations ; Graphene ; graphene field-effect transistors ; high frequency ; interface traps ; Logic gates ; Mathematical model ; modeling ; parasitic capacitance ; quantum capacitance ; small-signal model ; Transconductance</subject><ispartof>IEEE transactions on electron devices, 2013-06, Vol.60 (6), p.1799-1806</ispartof><rights>2014 INIST-CNRS</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c335t-16088adeef508f96914fb55c9b9ca104437654561cda77f99a9e059d3d807b953</citedby><cites>FETCH-LOGICAL-c335t-16088adeef508f96914fb55c9b9ca104437654561cda77f99a9e059d3d807b953</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/6515134$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/6515134$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=27784603$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Zebrev, G. I.</creatorcontrib><creatorcontrib>Tselykovskiy, A. A.</creatorcontrib><creatorcontrib>Batmanova, D. K.</creatorcontrib><creatorcontrib>Melnik, E. V.</creatorcontrib><title>Small-Signal Capacitance and Current Parameter Modeling in Large-Scale High-Frequency Graphene Field-Effect Transistors</title><title>IEEE transactions on electron devices</title><addtitle>TED</addtitle><description>An analytical model of the small-signal current and capacitance characteristics of radio frequency graphene field-effect transistors (GFETs) is presented. The model is based on explicit distributions of chemical potential in graphene channels (including ambipolar conductivity at high source-drain bias) obtained in the framework of drift-diffusion current continuity equation solution. Small-signal transconductance and output conductance characteristics are modeled by considering the two modes of drain current saturation, including drift velocity saturation or electrostatic pinchoff. Analytical closed expression for the complex current gain and the cutoff frequency of high-frequency GFETs are obtained. This model allows to describe an impact of parasitic resistances, capacitances, interface traps on extrinsic current gain, and cutoff frequency.</description><subject>Capacitance</subject><subject>Cutoff frequency</subject><subject>Equations</subject><subject>Graphene</subject><subject>graphene field-effect transistors</subject><subject>high frequency</subject><subject>interface traps</subject><subject>Logic gates</subject><subject>Mathematical model</subject><subject>modeling</subject><subject>parasitic capacitance</subject><subject>quantum capacitance</subject><subject>small-signal model</subject><subject>Transconductance</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2013</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kE1LAzEQhoMoWD_ugpdcPKYmm6_NUWqrQkWh9bxMs5Ma2aY1WRH_vVsqnoZh3meYeQi5EnwsBHe3y-n9uOJCjqtKW-vkERkJrS1zRpljMuJc1MzJWp6Ss1I-htYoVY3I92IDXccWcZ2goxPYgY89JI8UUksnXzlj6ukrZNhgj5k-b1vsYlrTmOgc8hrZwkOH9DGu39ks4-cXJv9DHzLs3jEhnUXsWjYNAX1PlxlSiaXf5nJBTgJ0BS__6jl5m02Xk0c2f3l4mtzNmZdS90wYXtfQIgbN6-CMEyqstPZu5TwIrpS0RitthG_B2uAcOOTatbKtuV05Lc8JP-z1eVtKxtDsctxA_mkEb_bimkFcsxfX_IkbkJsDsoMy_BaGo30s_1xlba0M3-euD7mIiP9jo4UWUslfPpx3NA</recordid><startdate>20130601</startdate><enddate>20130601</enddate><creator>Zebrev, G. I.</creator><creator>Tselykovskiy, A. A.</creator><creator>Batmanova, D. K.</creator><creator>Melnik, E. V.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20130601</creationdate><title>Small-Signal Capacitance and Current Parameter Modeling in Large-Scale High-Frequency Graphene Field-Effect Transistors</title><author>Zebrev, G. I. ; Tselykovskiy, A. A. ; Batmanova, D. K. ; Melnik, E. V.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c335t-16088adeef508f96914fb55c9b9ca104437654561cda77f99a9e059d3d807b953</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2013</creationdate><topic>Capacitance</topic><topic>Cutoff frequency</topic><topic>Equations</topic><topic>Graphene</topic><topic>graphene field-effect transistors</topic><topic>high frequency</topic><topic>interface traps</topic><topic>Logic gates</topic><topic>Mathematical model</topic><topic>modeling</topic><topic>parasitic capacitance</topic><topic>quantum capacitance</topic><topic>small-signal model</topic><topic>Transconductance</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Zebrev, G. I.</creatorcontrib><creatorcontrib>Tselykovskiy, A. A.</creatorcontrib><creatorcontrib>Batmanova, D. K.</creatorcontrib><creatorcontrib>Melnik, E. V.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Xplore</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Zebrev, G. I.</au><au>Tselykovskiy, A. A.</au><au>Batmanova, D. K.</au><au>Melnik, E. V.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Small-Signal Capacitance and Current Parameter Modeling in Large-Scale High-Frequency Graphene Field-Effect Transistors</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>2013-06-01</date><risdate>2013</risdate><volume>60</volume><issue>6</issue><spage>1799</spage><epage>1806</epage><pages>1799-1806</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract>An analytical model of the small-signal current and capacitance characteristics of radio frequency graphene field-effect transistors (GFETs) is presented. The model is based on explicit distributions of chemical potential in graphene channels (including ambipolar conductivity at high source-drain bias) obtained in the framework of drift-diffusion current continuity equation solution. Small-signal transconductance and output conductance characteristics are modeled by considering the two modes of drain current saturation, including drift velocity saturation or electrostatic pinchoff. Analytical closed expression for the complex current gain and the cutoff frequency of high-frequency GFETs are obtained. This model allows to describe an impact of parasitic resistances, capacitances, interface traps on extrinsic current gain, and cutoff frequency.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/TED.2013.2257793</doi><tpages>8</tpages><oa>free_for_read</oa></addata></record> |
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| subjects | Capacitance Cutoff frequency Equations Graphene graphene field-effect transistors high frequency interface traps Logic gates Mathematical model modeling parasitic capacitance quantum capacitance small-signal model Transconductance |
| title | Small-Signal Capacitance and Current Parameter Modeling in Large-Scale High-Frequency Graphene Field-Effect Transistors |
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