A Comprehensive Crossbar Array Model With Solutions for Line Resistance and Nonlinear Device Characteristics
This paper presents a comprehensive crossbar array model that incorporates line resistance and nonlinear device characteristics. The model can be solved using matrix algebra and is suitable for statistical analysis. The nonlinear device solution enables the assessment of crossbar arrays with diode o...
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| Veröffentlicht in: | IEEE transactions on electron devices 2013-04, Vol.60 (4), p.1318-1326 |
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| container_title | IEEE transactions on electron devices |
| container_volume | 60 |
| creator | Chen, An |
| description | This paper presents a comprehensive crossbar array model that incorporates line resistance and nonlinear device characteristics. The model can be solved using matrix algebra and is suitable for statistical analysis. The nonlinear device solution enables the assessment of crossbar arrays with diode or nonlinear select devices. The calculation based on this model shows that voltage and current degradation due to line resistance are not negligible even for small crossbar arrays, which constrains feasible array size. Diode and nonlinear select devices significantly improve the sensing margin of reading operation and the voltage window of writing operation. This model provides a quantitative tool for accurate analysis of crossbar arrays and the evaluation of memory select devices. |
| doi_str_mv | 10.1109/TED.2013.2246791 |
| format | Article |
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The model can be solved using matrix algebra and is suitable for statistical analysis. The nonlinear device solution enables the assessment of crossbar arrays with diode or nonlinear select devices. The calculation based on this model shows that voltage and current degradation due to line resistance are not negligible even for small crossbar arrays, which constrains feasible array size. Diode and nonlinear select devices significantly improve the sensing margin of reading operation and the voltage window of writing operation. This model provides a quantitative tool for accurate analysis of crossbar arrays and the evaluation of memory select devices.</description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/TED.2013.2246791</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Applied sciences ; Arrays ; Crossbar array ; Design. Technologies. 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The model can be solved using matrix algebra and is suitable for statistical analysis. The nonlinear device solution enables the assessment of crossbar arrays with diode or nonlinear select devices. The calculation based on this model shows that voltage and current degradation due to line resistance are not negligible even for small crossbar arrays, which constrains feasible array size. Diode and nonlinear select devices significantly improve the sensing margin of reading operation and the voltage window of writing operation. This model provides a quantitative tool for accurate analysis of crossbar arrays and the evaluation of memory select devices.</description><subject>Applied sciences</subject><subject>Arrays</subject><subject>Crossbar array</subject><subject>Design. Technologies. Operation analysis. Testing</subject><subject>Diodes</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Integrated circuits</subject><subject>Junctions</subject><subject>line resistance</subject><subject>Magnetic and optical mass memories</subject><subject>Matrices</subject><subject>memory</subject><subject>nonlinearity</subject><subject>Resistance</subject><subject>Resistors</subject><subject>select devices</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. 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Technologies. Operation analysis. Testing</topic><topic>Diodes</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Integrated circuits</topic><topic>Junctions</topic><topic>line resistance</topic><topic>Magnetic and optical mass memories</topic><topic>Matrices</topic><topic>memory</topic><topic>nonlinearity</topic><topic>Resistance</topic><topic>Resistors</topic><topic>select devices</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Sensors</topic><topic>Storage and reproduction of information</topic><topic>Writing</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Chen, An</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Chen, An</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A Comprehensive Crossbar Array Model With Solutions for Line Resistance and Nonlinear Device Characteristics</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>2013-04-01</date><risdate>2013</risdate><volume>60</volume><issue>4</issue><spage>1318</spage><epage>1326</epage><pages>1318-1326</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract>This paper presents a comprehensive crossbar array model that incorporates line resistance and nonlinear device characteristics. The model can be solved using matrix algebra and is suitable for statistical analysis. The nonlinear device solution enables the assessment of crossbar arrays with diode or nonlinear select devices. The calculation based on this model shows that voltage and current degradation due to line resistance are not negligible even for small crossbar arrays, which constrains feasible array size. Diode and nonlinear select devices significantly improve the sensing margin of reading operation and the voltage window of writing operation. This model provides a quantitative tool for accurate analysis of crossbar arrays and the evaluation of memory select devices.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/TED.2013.2246791</doi><tpages>9</tpages></addata></record> |
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| source | IEEE Electronic Library (IEL) |
| subjects | Applied sciences Arrays Crossbar array Design. Technologies. Operation analysis. Testing Diodes Electronics Exact sciences and technology Integrated circuits Junctions line resistance Magnetic and optical mass memories Matrices memory nonlinearity Resistance Resistors select devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Sensors Storage and reproduction of information Writing |
| title | A Comprehensive Crossbar Array Model With Solutions for Line Resistance and Nonlinear Device Characteristics |
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