Fabrication of \hbox\hbox/\hbox pMOSFETs Using Corrugated Substrates for Improved I and Reduced Layout-Width Dependence

Segmented-channel Si 1 - x Ge x /Si p-channel MOSFETs are fabricated using a conventional process, starting with corrugated Si 1 - x Ge x /Sisubstrates. As compared with the control devices fabricated using the same process but starting with a noncorrugated Si 1 - x Ge x /Si substrate, the segmented...

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Veröffentlicht in:	IEEE transactions on electron devices 2013-01, Vol.60 (1), p.153-158
Hauptverfasser:	Ho, B., Nuo Xu, Wood, B., Vinh Tran, Chopra, S., Yihwan Kim, Bich-Yen Nguyen, Bonnin, O., Mazure, C., Kuppurao, S., Chorng-Ping Chang, Tsu-Jae King Liu
Format:	Artikel
Sprache:	eng
Schlagworte:	CMOS Fabrication Layout Logic gates MOSFETs Performance evaluation Silicon Silicon-germanium Substrates
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