A 33-Megapixel 120-Frames-Per-Second 2.5-Watt CMOS Image Sensor With Column-Parallel Two-Stage Cyclic Analog-to-Digital Converters
A 33-megapixel 120-frames/s (fps) CMOS image sensor has been developed. The 7808 × 4336 pixel 2.8-μm pixel pitch CMOS image sensor with 12-bit, column-parallel, two-stage, cyclic analog-to-digital converters (ADCs) and 96 parallel low-voltage differential signaling output ports operates at a data ra...
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| Veröffentlicht in: | IEEE transactions on electron devices 2012-12, Vol.59 (12), p.3426-3433 |
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| container_title | IEEE transactions on electron devices |
| container_volume | 59 |
| creator | Kitamura, K. Watabe, T. Sawamoto, T. Kosugi, T. Akahori, T. Iida, T. Isobe, K. Watanabe, T. Shimamoto, H. Ohtake, H. Aoyama, S. Kawahito, S. Egami, N. |
| description | A 33-megapixel 120-frames/s (fps) CMOS image sensor has been developed. The 7808 × 4336 pixel 2.8-μm pixel pitch CMOS image sensor with 12-bit, column-parallel, two-stage, cyclic analog-to-digital converters (ADCs) and 96 parallel low-voltage differential signaling output ports operates at a data rate of 51.2 Gb/s. The pipelined operation of the two cyclic ADCs reduces the conversion time. This ADC architecture also effectively lowers the power consumption by exploiting the amplifier function of the cyclic ADC. The CMOS image sensor implemented with 0.18-μm technology exhibits a sensitivity of 0.76 V/lx·s without a microlens and a random noise of 5.1 e rms - with no column amplifier gain and 3.0 e rms - with a gain of 7.5 at 120 fps while dissipating only 2.45 and 2.67 W, respectively. |
| doi_str_mv | 10.1109/TED.2012.2220364 |
| format | Article |
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The 7808 × 4336 pixel 2.8-μm pixel pitch CMOS image sensor with 12-bit, column-parallel, two-stage, cyclic analog-to-digital converters (ADCs) and 96 parallel low-voltage differential signaling output ports operates at a data rate of 51.2 Gb/s. The pipelined operation of the two cyclic ADCs reduces the conversion time. This ADC architecture also effectively lowers the power consumption by exploiting the amplifier function of the cyclic ADC. The CMOS image sensor implemented with 0.18-μm technology exhibits a sensitivity of 0.76 V/lx·s without a microlens and a random noise of 5.1 e rms - with no column amplifier gain and 3.0 e rms - with a gain of 7.5 at 120 fps while dissipating only 2.45 and 2.67 W, respectively.</description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/TED.2012.2220364</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Amplifiers ; Analog-digital conversion ; Applied sciences ; Capacitors ; Circuit properties ; CMOS image sensors ; Electric, optical and optoelectronic circuits ; Electronic circuits ; Electronics ; Exact sciences and technology ; high-definition video ; high-resolution imaging ; Image resolution ; Imaging devices ; Noise measurement ; Power demand ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Signal convertors</subject><ispartof>IEEE transactions on electron devices, 2012-12, Vol.59 (12), p.3426-3433</ispartof><rights>2014 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c293t-ead4547cb048249af3da40842c9d5667c5b8c4cabeab4c4196db72f6806218283</citedby><cites>FETCH-LOGICAL-c293t-ead4547cb048249af3da40842c9d5667c5b8c4cabeab4c4196db72f6806218283</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/6341066$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/6341066$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=26690948$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Kitamura, K.</creatorcontrib><creatorcontrib>Watabe, T.</creatorcontrib><creatorcontrib>Sawamoto, T.</creatorcontrib><creatorcontrib>Kosugi, T.</creatorcontrib><creatorcontrib>Akahori, T.</creatorcontrib><creatorcontrib>Iida, T.</creatorcontrib><creatorcontrib>Isobe, K.</creatorcontrib><creatorcontrib>Watanabe, T.</creatorcontrib><creatorcontrib>Shimamoto, H.</creatorcontrib><creatorcontrib>Ohtake, H.</creatorcontrib><creatorcontrib>Aoyama, S.</creatorcontrib><creatorcontrib>Kawahito, S.</creatorcontrib><creatorcontrib>Egami, N.</creatorcontrib><title>A 33-Megapixel 120-Frames-Per-Second 2.5-Watt CMOS Image Sensor With Column-Parallel Two-Stage Cyclic Analog-to-Digital Converters</title><title>IEEE transactions on electron devices</title><addtitle>TED</addtitle><description>A 33-megapixel 120-frames/s (fps) CMOS image sensor has been developed. The 7808 × 4336 pixel 2.8-μm pixel pitch CMOS image sensor with 12-bit, column-parallel, two-stage, cyclic analog-to-digital converters (ADCs) and 96 parallel low-voltage differential signaling output ports operates at a data rate of 51.2 Gb/s. The pipelined operation of the two cyclic ADCs reduces the conversion time. This ADC architecture also effectively lowers the power consumption by exploiting the amplifier function of the cyclic ADC. The CMOS image sensor implemented with 0.18-μm technology exhibits a sensitivity of 0.76 V/lx·s without a microlens and a random noise of 5.1 e rms - with no column amplifier gain and 3.0 e rms - with a gain of 7.5 at 120 fps while dissipating only 2.45 and 2.67 W, respectively.</description><subject>Amplifiers</subject><subject>Analog-digital conversion</subject><subject>Applied sciences</subject><subject>Capacitors</subject><subject>Circuit properties</subject><subject>CMOS image sensors</subject><subject>Electric, optical and optoelectronic circuits</subject><subject>Electronic circuits</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>high-definition video</subject><subject>high-resolution imaging</subject><subject>Image resolution</subject><subject>Imaging devices</subject><subject>Noise measurement</subject><subject>Power demand</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. 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Microelectronics. Optoelectronics. Solid state devices</topic><topic>Signal convertors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kitamura, K.</creatorcontrib><creatorcontrib>Watabe, T.</creatorcontrib><creatorcontrib>Sawamoto, T.</creatorcontrib><creatorcontrib>Kosugi, T.</creatorcontrib><creatorcontrib>Akahori, T.</creatorcontrib><creatorcontrib>Iida, T.</creatorcontrib><creatorcontrib>Isobe, K.</creatorcontrib><creatorcontrib>Watanabe, T.</creatorcontrib><creatorcontrib>Shimamoto, H.</creatorcontrib><creatorcontrib>Ohtake, H.</creatorcontrib><creatorcontrib>Aoyama, S.</creatorcontrib><creatorcontrib>Kawahito, S.</creatorcontrib><creatorcontrib>Egami, N.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Kitamura, K.</au><au>Watabe, T.</au><au>Sawamoto, T.</au><au>Kosugi, T.</au><au>Akahori, T.</au><au>Iida, T.</au><au>Isobe, K.</au><au>Watanabe, T.</au><au>Shimamoto, H.</au><au>Ohtake, H.</au><au>Aoyama, S.</au><au>Kawahito, S.</au><au>Egami, N.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A 33-Megapixel 120-Frames-Per-Second 2.5-Watt CMOS Image Sensor With Column-Parallel Two-Stage Cyclic Analog-to-Digital Converters</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>2012-12-01</date><risdate>2012</risdate><volume>59</volume><issue>12</issue><spage>3426</spage><epage>3433</epage><pages>3426-3433</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract>A 33-megapixel 120-frames/s (fps) CMOS image sensor has been developed. The 7808 × 4336 pixel 2.8-μm pixel pitch CMOS image sensor with 12-bit, column-parallel, two-stage, cyclic analog-to-digital converters (ADCs) and 96 parallel low-voltage differential signaling output ports operates at a data rate of 51.2 Gb/s. The pipelined operation of the two cyclic ADCs reduces the conversion time. This ADC architecture also effectively lowers the power consumption by exploiting the amplifier function of the cyclic ADC. The CMOS image sensor implemented with 0.18-μm technology exhibits a sensitivity of 0.76 V/lx·s without a microlens and a random noise of 5.1 e rms - with no column amplifier gain and 3.0 e rms - with a gain of 7.5 at 120 fps while dissipating only 2.45 and 2.67 W, respectively.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/TED.2012.2220364</doi><tpages>8</tpages></addata></record> |
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| subjects | Amplifiers Analog-digital conversion Applied sciences Capacitors Circuit properties CMOS image sensors Electric, optical and optoelectronic circuits Electronic circuits Electronics Exact sciences and technology high-definition video high-resolution imaging Image resolution Imaging devices Noise measurement Power demand Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Signal convertors |
| title | A 33-Megapixel 120-Frames-Per-Second 2.5-Watt CMOS Image Sensor With Column-Parallel Two-Stage Cyclic Analog-to-Digital Converters |
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