White-Light Electroluminescence From n-ZnO/p-GaN Heterojunction Light-Emitting Diodes at Reverse Breakdown Bias
White-light electroluminescence (EL) from n-type ZnO (n-ZnO)/p-type GaN (p-GaN) heterojunction light-emitting diodes operated at reverse breakdown bias was reported. The n-ZnO epilayers were grown by atomic layer deposition on p-GaN. The electron tunneling from the deep-level states near the ZnO/GaN...
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| Veröffentlicht in: | IEEE transactions on electron devices 2011-11, Vol.58 (11), p.3970-3975 |
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| container_title | IEEE transactions on electron devices |
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| creator | Chen, H. C. Chen, M. J. Huang, Y. H. Sun, W. C. Li, W. C. Yang, J. R. Kuan, H. Shiojiri, M. |
| description | White-light electroluminescence (EL) from n-type ZnO (n-ZnO)/p-type GaN (p-GaN) heterojunction light-emitting diodes operated at reverse breakdown bias was reported. The n-ZnO epilayers were grown by atomic layer deposition on p-GaN. The electron tunneling from the deep-level states near the ZnO/GaN interface to the conduction band in n-ZnO is responsible for the reverse breakdown. The EL spectrum was composed of the blue light at 450 nm and the broadband around 550 nm, which originated from the Mg acceptor levels in p-GaN and the deep-level states near the ZnO/GaN interface, respectively. The chromaticity coordinate of the EL spectrum was (0.31, 0.36), which is very close to (0.33, 0.33) of the standard white light. |
| doi_str_mv | 10.1109/TED.2011.2164408 |
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C. ; Chen, M. J. ; Huang, Y. H. ; Sun, W. C. ; Li, W. C. ; Yang, J. R. ; Kuan, H. ; Shiojiri, M.</creator><creatorcontrib>Chen, H. C. ; Chen, M. J. ; Huang, Y. H. ; Sun, W. C. ; Li, W. C. ; Yang, J. R. ; Kuan, H. ; Shiojiri, M.</creatorcontrib><description>White-light electroluminescence (EL) from n-type ZnO (n-ZnO)/p-type GaN (p-GaN) heterojunction light-emitting diodes operated at reverse breakdown bias was reported. The n-ZnO epilayers were grown by atomic layer deposition on p-GaN. The electron tunneling from the deep-level states near the ZnO/GaN interface to the conduction band in n-ZnO is responsible for the reverse breakdown. The EL spectrum was composed of the blue light at 450 nm and the broadband around 550 nm, which originated from the Mg acceptor levels in p-GaN and the deep-level states near the ZnO/GaN interface, respectively. The chromaticity coordinate of the EL spectrum was (0.31, 0.36), which is very close to (0.33, 0.33) of the standard white light.</description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/TED.2011.2164408</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Applied sciences ; Atomic layer deposition (ALD) ; Bias ; Breakdown ; Compound structure devices ; Diodes ; Electric breakdown ; Electroluminescence ; Electronics ; Exact sciences and technology ; Gallium nitride ; Gallium nitrides ; heterojunction ; Heterojunctions ; Laser excitation ; Light emitting diodes ; Optoelectronic devices ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Tunneling ; White light ; white-light-emitting diode (LED) ; Zinc oxide</subject><ispartof>IEEE transactions on electron devices, 2011-11, Vol.58 (11), p.3970-3975</ispartof><rights>2015 INIST-CNRS</rights><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) Nov 2011</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c461t-77bc39918d82950311a39cd14931f705d028715a24baa10cf79a17786faa9f03</citedby><cites>FETCH-LOGICAL-c461t-77bc39918d82950311a39cd14931f705d028715a24baa10cf79a17786faa9f03</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/6024448$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27923,27924,54757</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/6024448$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=24776183$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Chen, H. C.</creatorcontrib><creatorcontrib>Chen, M. J.</creatorcontrib><creatorcontrib>Huang, Y. H.</creatorcontrib><creatorcontrib>Sun, W. C.</creatorcontrib><creatorcontrib>Li, W. C.</creatorcontrib><creatorcontrib>Yang, J. R.</creatorcontrib><creatorcontrib>Kuan, H.</creatorcontrib><creatorcontrib>Shiojiri, M.</creatorcontrib><title>White-Light Electroluminescence From n-ZnO/p-GaN Heterojunction Light-Emitting Diodes at Reverse Breakdown Bias</title><title>IEEE transactions on electron devices</title><addtitle>TED</addtitle><description>White-light electroluminescence (EL) from n-type ZnO (n-ZnO)/p-type GaN (p-GaN) heterojunction light-emitting diodes operated at reverse breakdown bias was reported. The n-ZnO epilayers were grown by atomic layer deposition on p-GaN. The electron tunneling from the deep-level states near the ZnO/GaN interface to the conduction band in n-ZnO is responsible for the reverse breakdown. The EL spectrum was composed of the blue light at 450 nm and the broadband around 550 nm, which originated from the Mg acceptor levels in p-GaN and the deep-level states near the ZnO/GaN interface, respectively. The chromaticity coordinate of the EL spectrum was (0.31, 0.36), which is very close to (0.33, 0.33) of the standard white light.</description><subject>Applied sciences</subject><subject>Atomic layer deposition (ALD)</subject><subject>Bias</subject><subject>Breakdown</subject><subject>Compound structure devices</subject><subject>Diodes</subject><subject>Electric breakdown</subject><subject>Electroluminescence</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Gallium nitride</subject><subject>Gallium nitrides</subject><subject>heterojunction</subject><subject>Heterojunctions</subject><subject>Laser excitation</subject><subject>Light emitting diodes</subject><subject>Optoelectronic devices</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Tunneling</subject><subject>White light</subject><subject>white-light-emitting diode (LED)</subject><subject>Zinc oxide</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2011</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNpdkEFr3DAQRk1podu090IvolDoxZsZS7akY5NsksKSQFgo9GIUeZxoa0tbSW7Iv4-TXXLoaRjmfcPMK4rPCEtE0Meb1dmyAsRlhY0QoN4UC6xrWepGNG-LBQCqUnPF3xcfUtrO7UxViyL8uneZyrW7u89sNZDNMQzT6DwlS94SO49hZL787a-Pd-WFuWKXlCmG7eRtdsGzl2S5Gl3Ozt-xMxc6SsxkdkP_KCZiJ5HMny48eHbiTPpYvOvNkOjToR4Vm_PV5vSyXF9f_Dz9sS6taDCXUt5arjWqTlW6Bo5ouLYdCs2xl1B3UCmJtanErTEItpfaoJSq6Y3RPfCj4vt-7S6GvxOl3I5ufmgYjKcwpRa50KICBfWMfv0P3YYp-vm4VgNALTnqGYI9ZGNIKVLf7qIbTXxsEdpn_-3sv3323x78z5Fvh70mWTP00Xjr0muuElI2qPjMfdlzjohexw1UQgjFnwDSIoyb</recordid><startdate>20111101</startdate><enddate>20111101</enddate><creator>Chen, H. C.</creator><creator>Chen, M. J.</creator><creator>Huang, Y. H.</creator><creator>Sun, W. C.</creator><creator>Li, W. C.</creator><creator>Yang, J. R.</creator><creator>Kuan, H.</creator><creator>Shiojiri, M.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>7QQ</scope><scope>F28</scope><scope>FR3</scope><scope>JG9</scope></search><sort><creationdate>20111101</creationdate><title>White-Light Electroluminescence From n-ZnO/p-GaN Heterojunction Light-Emitting Diodes at Reverse Breakdown Bias</title><author>Chen, H. C. ; Chen, M. J. ; Huang, Y. H. ; Sun, W. C. ; Li, W. C. ; Yang, J. 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Solid state devices</topic><topic>Tunneling</topic><topic>White light</topic><topic>white-light-emitting diode (LED)</topic><topic>Zinc oxide</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Chen, H. C.</creatorcontrib><creatorcontrib>Chen, M. J.</creatorcontrib><creatorcontrib>Huang, Y. H.</creatorcontrib><creatorcontrib>Sun, W. C.</creatorcontrib><creatorcontrib>Li, W. C.</creatorcontrib><creatorcontrib>Yang, J. R.</creatorcontrib><creatorcontrib>Kuan, H.</creatorcontrib><creatorcontrib>Shiojiri, M.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005–Present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998–Present</collection><collection>IEEE Xplore</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Ceramic Abstracts</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>Materials Research Database</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Chen, H. C.</au><au>Chen, M. J.</au><au>Huang, Y. H.</au><au>Sun, W. C.</au><au>Li, W. C.</au><au>Yang, J. R.</au><au>Kuan, H.</au><au>Shiojiri, M.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>White-Light Electroluminescence From n-ZnO/p-GaN Heterojunction Light-Emitting Diodes at Reverse Breakdown Bias</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>2011-11-01</date><risdate>2011</risdate><volume>58</volume><issue>11</issue><spage>3970</spage><epage>3975</epage><pages>3970-3975</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract>White-light electroluminescence (EL) from n-type ZnO (n-ZnO)/p-type GaN (p-GaN) heterojunction light-emitting diodes operated at reverse breakdown bias was reported. The n-ZnO epilayers were grown by atomic layer deposition on p-GaN. The electron tunneling from the deep-level states near the ZnO/GaN interface to the conduction band in n-ZnO is responsible for the reverse breakdown. The EL spectrum was composed of the blue light at 450 nm and the broadband around 550 nm, which originated from the Mg acceptor levels in p-GaN and the deep-level states near the ZnO/GaN interface, respectively. The chromaticity coordinate of the EL spectrum was (0.31, 0.36), which is very close to (0.33, 0.33) of the standard white light.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/TED.2011.2164408</doi><tpages>6</tpages><oa>free_for_read</oa></addata></record> |
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| subjects | Applied sciences Atomic layer deposition (ALD) Bias Breakdown Compound structure devices Diodes Electric breakdown Electroluminescence Electronics Exact sciences and technology Gallium nitride Gallium nitrides heterojunction Heterojunctions Laser excitation Light emitting diodes Optoelectronic devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Tunneling White light white-light-emitting diode (LED) Zinc oxide |
| title | White-Light Electroluminescence From n-ZnO/p-GaN Heterojunction Light-Emitting Diodes at Reverse Breakdown Bias |
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