Evaluation of a Surface-Channel CCD Manufactured in a Pinned Active-Pixel-Sensor CMOS Process

This paper presents measurements on a surface-channel charge-coupled device (CCD) with gates implemented using single-layer poly-silicon gates. The device was manufactured in a 0.18-μm pinned photodiode CMOS process available commercially from the United Microelectronics Corporation. The CCD was bui...

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Veröffentlicht in:	IEEE transactions on electron devices 2011-08, Vol.58 (8), p.2660-2664
Hauptverfasser:	Borg, J., Johansson, J.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Charge Charge carrier processes Charge coupled devices charge transfer Charge transfer devices charge transfer inefficiency Clocks CMOS CMOS process Design. Technologies. Operation analysis. Testing Devices Electric potential electron traps Electronics Exact sciences and technology Gates Imaging devices Industrial Electronics Industriell elektronik Integrated circuits Logic gates Optoelectronic devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Trapping Voltage Voltage measurement
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