RF Performance and Small-Signal Parameter Extraction of Junctionless Silicon Nanowire MOSFETs

This paper presents a radio-frequency (RF) model and extracted model parameters for junctionless silicon nanowire (JLSNW) metal-oxide-semiconductor field-effect transistors (MOSFETs) using a 3-D device simulator. JLSNW MOSFETs are evaluated for various RF parameters such as cutoff frequency fT , gat...

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Veröffentlicht in:	IEEE transactions on electron devices 2011-05, Vol.58 (5), p.1388-1396
Hauptverfasser:	CHO, Seongjae, KYUNG ROK KIM, PARK, Byung-Gook, IN MAN KANG
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Capacitance Cross-disciplinary physics: materials science rheology Device simulation Devices Doping Electronics Exact sciences and technology junctionless (JL) Logic gates Materials science Mathematical models metal-oxide-semiconductor field-effect transistor (MOSFET) modeling MOSFET circuits MOSFETs Nanocomposites Nanomaterials Nanoscale materials and structures: fabrication and characterization Nanostructure Nanowires non-quasi-static (NQS) parameter extraction Physics Quantum wires Radio frequencies Radio frequency radio frequency (RF) Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silicon silicon nanowire (SNW) Solid modeling Transistors
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