A New 20 V-Rated Buried-Oxide Trench-Gate Bipolar-Mode JFET FOR DC/DC Converters
A new normally-on buried-oxide (BOX) trench-gate bipolar-mode JFET (BTB-JFET) is reported for high-frequency low-voltage low-power-loss dc/dc converter applications. The BOX structure of the device is realized by localized thermal oxidation at the bottom of the gate trench. The fabricated BTB-JFET h...
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| Veröffentlicht in: | IEEE transactions on electron devices 2010-12, Vol.57 (12), p.3531-3535 |
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| container_title | IEEE transactions on electron devices |
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| creator | Bo Tian Yu Wu Huai Huang Lingpeng Guan Sin, J K O Baowei Kang |
| description | A new normally-on buried-oxide (BOX) trench-gate bipolar-mode JFET (BTB-JFET) is reported for high-frequency low-voltage low-power-loss dc/dc converter applications. The BOX structure of the device is realized by localized thermal oxidation at the bottom of the gate trench. The fabricated BTB-JFET has a breakdown voltage of 21 V at V GS = -3 V. Due to the BOX under the gate region, the gate-drain capacitance C GD of the device is decreased by up to 30% at zero source-drain bias compared with that of the conventional trench-gate bipolar-mode JFET. The lower C GD reduces the switching times and the voltage dips during turn-on and turn-off. The resistive turn-on and turn-off times of the device are decreased from 31.5 to 30 ns and 12 to 10.5 ns, respectively. This approximately provides a 5% reduction in t on and 12% in t off , which is in agreement with the simulation results. |
| doi_str_mv | 10.1109/TED.2010.2076090 |
| format | Article |
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The BOX structure of the device is realized by localized thermal oxidation at the bottom of the gate trench. The fabricated BTB-JFET has a breakdown voltage of 21 V at V GS = -3 V. Due to the BOX under the gate region, the gate-drain capacitance C GD of the device is decreased by up to 30% at zero source-drain bias compared with that of the conventional trench-gate bipolar-mode JFET. The lower C GD reduces the switching times and the voltage dips during turn-on and turn-off. The resistive turn-on and turn-off times of the device are decreased from 31.5 to 30 ns and 12 to 10.5 ns, respectively. This approximately provides a 5% reduction in t on and 12% in t off , which is in agreement with the simulation results.</description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/TED.2010.2076090</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Applied sciences ; Buried-oxide (BOX) trench-gate bipolar-mode power JFET (BTB-JFET) ; Circuit properties ; Converters ; DC-DC power converters ; Devices ; Dipping ; Direct current ; Electric potential ; Electric, optical and optoelectronic circuits ; Electronic circuits ; Electronic equipment and fabrication. Passive components, printed wiring boards, connectics ; Electronics ; Exact sciences and technology ; Fabrication ; gate-drain capacitance ; Gates ; JFET ; JFETs ; MOSFETs ; Other multijunction devices. Power transistors. Thyristors ; Power transistors ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Signal convertors ; Switches ; switching times ; Transistors ; trench-gate bipolar-mode power JFET (TB-JFET) ; Voltage</subject><ispartof>IEEE transactions on electron devices, 2010-12, Vol.57 (12), p.3531-3535</ispartof><rights>2015 INIST-CNRS</rights><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) Dec 2010</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c306t-6ad59e5e67f161e7c5eac7c0908f1c68cbc36effb01ae468a059ff507a56c3543</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/5604650$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27903,27904,54736</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/5604650$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=23669099$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Bo Tian</creatorcontrib><creatorcontrib>Yu Wu</creatorcontrib><creatorcontrib>Huai Huang</creatorcontrib><creatorcontrib>Lingpeng Guan</creatorcontrib><creatorcontrib>Sin, J K O</creatorcontrib><creatorcontrib>Baowei Kang</creatorcontrib><title>A New 20 V-Rated Buried-Oxide Trench-Gate Bipolar-Mode JFET FOR DC/DC Converters</title><title>IEEE transactions on electron devices</title><addtitle>TED</addtitle><description>A new normally-on buried-oxide (BOX) trench-gate bipolar-mode JFET (BTB-JFET) is reported for high-frequency low-voltage low-power-loss dc/dc converter applications. The BOX structure of the device is realized by localized thermal oxidation at the bottom of the gate trench. The fabricated BTB-JFET has a breakdown voltage of 21 V at V GS = -3 V. Due to the BOX under the gate region, the gate-drain capacitance C GD of the device is decreased by up to 30% at zero source-drain bias compared with that of the conventional trench-gate bipolar-mode JFET. The lower C GD reduces the switching times and the voltage dips during turn-on and turn-off. The resistive turn-on and turn-off times of the device are decreased from 31.5 to 30 ns and 12 to 10.5 ns, respectively. This approximately provides a 5% reduction in t on and 12% in t off , which is in agreement with the simulation results.</description><subject>Applied sciences</subject><subject>Buried-oxide (BOX) trench-gate bipolar-mode power JFET (BTB-JFET)</subject><subject>Circuit properties</subject><subject>Converters</subject><subject>DC-DC power converters</subject><subject>Devices</subject><subject>Dipping</subject><subject>Direct current</subject><subject>Electric potential</subject><subject>Electric, optical and optoelectronic circuits</subject><subject>Electronic circuits</subject><subject>Electronic equipment and fabrication. Passive components, printed wiring boards, connectics</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Fabrication</subject><subject>gate-drain capacitance</subject><subject>Gates</subject><subject>JFET</subject><subject>JFETs</subject><subject>MOSFETs</subject><subject>Other multijunction devices. Power transistors. Thyristors</subject><subject>Power transistors</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Signal convertors</subject><subject>Switches</subject><subject>switching times</subject><subject>Transistors</subject><subject>trench-gate bipolar-mode power JFET (TB-JFET)</subject><subject>Voltage</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNpdkEtLAzEUhYMoWB97wU1AxFX0ZjK5M1nqtL5QK1LdDjG9wZFxpiatj39vpMWFq8vhfOdwOYztSTiWEszJZDQ8ziCpDAoEA2tsILUuhMEc19kAQJbCqFJtsq0YX5PEPM8G7P6U39Enz4A_iQc7pyk_W4SGpmL81UyJTwJ17kVcJIefNbO-tUHc9sm4Ph9N-Pn4gQ-rk2HFq777oDCnEHfYhrdtpN3V3WaPCa0uxc344qo6vRFOAc4F2qk2pAkLL1FS4TRZV7j0eOmlw9I9O4Xk_TNISzmWFrTxXkNhNTqlc7XNjpa9s9C_LyjO67cmOmpb21G_iHWZmxRLdYk8-Ee-9ovQpedqCQqkNkWOiYIl5UIfYyBfz0LzZsN3gurfheu0cP27cL1aOEUOV8U2Otv6YDvXxL9cphANGJO4_SXXENGfrRFy1KB-AAX5f8c</recordid><startdate>20101201</startdate><enddate>20101201</enddate><creator>Bo Tian</creator><creator>Yu Wu</creator><creator>Huai Huang</creator><creator>Lingpeng Guan</creator><creator>Sin, J K O</creator><creator>Baowei Kang</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>F28</scope><scope>FR3</scope></search><sort><creationdate>20101201</creationdate><title>A New 20 V-Rated Buried-Oxide Trench-Gate Bipolar-Mode JFET FOR DC/DC Converters</title><author>Bo Tian ; Yu Wu ; Huai Huang ; Lingpeng Guan ; Sin, J K O ; Baowei Kang</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c306t-6ad59e5e67f161e7c5eac7c0908f1c68cbc36effb01ae468a059ff507a56c3543</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2010</creationdate><topic>Applied sciences</topic><topic>Buried-oxide (BOX) trench-gate bipolar-mode power JFET (BTB-JFET)</topic><topic>Circuit properties</topic><topic>Converters</topic><topic>DC-DC power converters</topic><topic>Devices</topic><topic>Dipping</topic><topic>Direct current</topic><topic>Electric potential</topic><topic>Electric, optical and optoelectronic circuits</topic><topic>Electronic circuits</topic><topic>Electronic equipment and fabrication. Passive components, printed wiring boards, connectics</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Fabrication</topic><topic>gate-drain capacitance</topic><topic>Gates</topic><topic>JFET</topic><topic>JFETs</topic><topic>MOSFETs</topic><topic>Other multijunction devices. Power transistors. Thyristors</topic><topic>Power transistors</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Signal convertors</topic><topic>Switches</topic><topic>switching times</topic><topic>Transistors</topic><topic>trench-gate bipolar-mode power JFET (TB-JFET)</topic><topic>Voltage</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Bo Tian</creatorcontrib><creatorcontrib>Yu Wu</creatorcontrib><creatorcontrib>Huai Huang</creatorcontrib><creatorcontrib>Lingpeng Guan</creatorcontrib><creatorcontrib>Sin, J K O</creatorcontrib><creatorcontrib>Baowei Kang</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Xplore</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Bo Tian</au><au>Yu Wu</au><au>Huai Huang</au><au>Lingpeng Guan</au><au>Sin, J K O</au><au>Baowei Kang</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A New 20 V-Rated Buried-Oxide Trench-Gate Bipolar-Mode JFET FOR DC/DC Converters</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>2010-12-01</date><risdate>2010</risdate><volume>57</volume><issue>12</issue><spage>3531</spage><epage>3535</epage><pages>3531-3535</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract>A new normally-on buried-oxide (BOX) trench-gate bipolar-mode JFET (BTB-JFET) is reported for high-frequency low-voltage low-power-loss dc/dc converter applications. The BOX structure of the device is realized by localized thermal oxidation at the bottom of the gate trench. The fabricated BTB-JFET has a breakdown voltage of 21 V at V GS = -3 V. Due to the BOX under the gate region, the gate-drain capacitance C GD of the device is decreased by up to 30% at zero source-drain bias compared with that of the conventional trench-gate bipolar-mode JFET. The lower C GD reduces the switching times and the voltage dips during turn-on and turn-off. The resistive turn-on and turn-off times of the device are decreased from 31.5 to 30 ns and 12 to 10.5 ns, respectively. This approximately provides a 5% reduction in t on and 12% in t off , which is in agreement with the simulation results.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/TED.2010.2076090</doi><tpages>5</tpages></addata></record> |
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| subjects | Applied sciences Buried-oxide (BOX) trench-gate bipolar-mode power JFET (BTB-JFET) Circuit properties Converters DC-DC power converters Devices Dipping Direct current Electric potential Electric, optical and optoelectronic circuits Electronic circuits Electronic equipment and fabrication. Passive components, printed wiring boards, connectics Electronics Exact sciences and technology Fabrication gate-drain capacitance Gates JFET JFETs MOSFETs Other multijunction devices. Power transistors. Thyristors Power transistors Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Signal convertors Switches switching times Transistors trench-gate bipolar-mode power JFET (TB-JFET) Voltage |
| title | A New 20 V-Rated Buried-Oxide Trench-Gate Bipolar-Mode JFET FOR DC/DC Converters |
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