High-Resistivity Thin-Film Resistors Grown Using \hbox-Si-SiC Materials by Radio-Frequency Magnetron Sputtering

Thin-film resistors for the high resistivity and the low temperature coefficient of resistance (TCR) applications were prepared using the CrB 2 -Si-SiC (it was abbreviated as CrSS) target in an argon and oxygen mixture ambient on the SiO 2 /Si substrates by radio-frequency magnetron sputtering. The...

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Veröffentlicht in:IEEE transactions on electron devices 2010-06, Vol.57 (6), p.1475-1480
Hauptverfasser: Park, Kyoung-Woo, Hur, Sung-Gi, Ahn, Jun-Ku, Seong, Nak-Jin, Yoon, Soon-Gil
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container_end_page 1480
container_issue 6
container_start_page 1475
container_title IEEE transactions on electron devices
container_volume 57
creator Park, Kyoung-Woo
Hur, Sung-Gi
Ahn, Jun-Ku
Seong, Nak-Jin
Yoon, Soon-Gil
description Thin-film resistors for the high resistivity and the low temperature coefficient of resistance (TCR) applications were prepared using the CrB 2 -Si-SiC (it was abbreviated as CrSS) target in an argon and oxygen mixture ambient on the SiO 2 /Si substrates by radio-frequency magnetron sputtering. The microstructural and electrical properties of the films were investigated for various deposition temperatures. The resistivity and the TCR values of the films were remarkably varied with increasing deposition temperature. Abrupt variations in the resistivity and the TCR values in the films grown above 550°C were attributed to the nanocrystalline Cr 2 SiO 4 phases embedded in the amorphous phases. The 91-nm-thick samples grown at 565°C in an argon and oxygen mixture ambient exhibited a resistivity as high as 1.0 kΩ/sq and a TCR value as low as -6 ppm/°C. The resistivity and the near-zero TCR values of the thin films grown at various temperatures are a strong candidate for high-resistivity thin-film resistor applications.
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The microstructural and electrical properties of the films were investigated for various deposition temperatures. The resistivity and the TCR values of the films were remarkably varied with increasing deposition temperature. Abrupt variations in the resistivity and the TCR values in the films grown above 550°C were attributed to the nanocrystalline Cr 2 SiO 4 phases embedded in the amorphous phases. The 91-nm-thick samples grown at 565°C in an argon and oxygen mixture ambient exhibited a resistivity as high as 1.0 kΩ/sq and a TCR value as low as -6 ppm/°C. 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The microstructural and electrical properties of the films were investigated for various deposition temperatures. The resistivity and the TCR values of the films were remarkably varied with increasing deposition temperature. Abrupt variations in the resistivity and the TCR values in the films grown above 550°C were attributed to the nanocrystalline Cr 2 SiO 4 phases embedded in the amorphous phases. The 91-nm-thick samples grown at 565°C in an argon and oxygen mixture ambient exhibited a resistivity as high as 1.0 kΩ/sq and a TCR value as low as -6 ppm/°C. The resistivity and the near-zero TCR values of the thin films grown at various temperatures are a strong candidate for high-resistivity thin-film resistor applications.</abstract><pub>IEEE</pub><doi>10.1109/TED.2010.2045673</doi><tpages>6</tpages></addata></record>
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subjects Chromium
Conductivity
hbox{CrB}_{2} -Si-SiC materials
nanocrystalline hbox{Cr}_{2}\hbox{SiO}_{4} Phase
Resistance
Resistors
Sputtering
Temperature
temperature coefficient of resistance
Temperature measurement
thin film resistor
title High-Resistivity Thin-Film Resistors Grown Using \hbox-Si-SiC Materials by Radio-Frequency Magnetron Sputtering
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