III-Nitride-Based Light-Emitting Diodes With GaN Micropillars Around Mesa and Patterned Substrate

In this paper, the textured-sidewall mesa and GaN microsize pillars (¿-pillars) around the mesa region were fabricated on III-nitride light-emitting diodes (LEDs) with a patterned sapphire substrate (PSS). We demonstrated that the light-waveguide mode outside the mesa region of III-nitride LEDs coul...

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Veröffentlicht in:	IEEE transactions on electron devices 2010-01, Vol.57 (1), p.140-144
Hauptverfasser:	Peng, Li-Chi, Lai, Wei-Chih, Chang, Ming-Nan, Hsueh, Tao-Hung, Shei, Shih-Chang, Sheu, Jinn-Kong
Format:	Artikel
Sprache:	eng
Schlagworte:	Gallium nitride GaN mu -pillars Indium tin oxide Iterative closest point algorithm Light emitting diodes patterned substrate Photonics Power generation Substrates textured sidewall
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