Electrostatic Reliability Characteristics of GaN Flip-Chip Power Light-Emitting Diodes With Metal-Oxide-Silicon Submount
The electrostatic reliability characteristics of gallium nitride flip-chip (FC) power light-emitting diodes (PLEDs) with metal-oxide-silicon (MOS) submount are investigated for the first time. The electrostatic damage reliability of the reported diode submount and that of our proposed simple structu...
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| Veröffentlicht in: | IEEE transactions on electron devices 2010-01, Vol.57 (1), p.119-124 |
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| container_title | IEEE transactions on electron devices |
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| creator | Chang, Liann-Be Chiang, Kuo-Ling Chang, Hsin-Yi Jeng, Ming-Jer Yen, Chia-Yi Lin, Cheng-Chen Chang, Yuan-Hsiao Lai, Mu-Jen Lee, Yu-Lin Soong, Tai-Wei |
| description | The electrostatic reliability characteristics of gallium nitride flip-chip (FC) power light-emitting diodes (PLEDs) with metal-oxide-silicon (MOS) submount are investigated for the first time. The electrostatic damage reliability of the reported diode submount and that of our proposed simple structure MOS submount are fabricated and compared. Their corresponding electrostatic protection capabilities are increased from 200 V (conventional PLED) to 500 V (FC-PLED on diode submount), to 500 V (FC-PLED on MOS submount with a SiO 2 thickness of 297 A¿), and even to a value as high as 1000 V (FC-PLED at a SiO 2 thickness of 167 A¿), which are much higher than the PLED industrial test value of 150 V at -5 V/-10 ¿ A criterion and are also much more robust than the previous academic reports. |
| doi_str_mv | 10.1109/TED.2009.2033774 |
| format | Article |
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The electrostatic damage reliability of the reported diode submount and that of our proposed simple structure MOS submount are fabricated and compared. Their corresponding electrostatic protection capabilities are increased from 200 V (conventional PLED) to 500 V (FC-PLED on diode submount), to 500 V (FC-PLED on MOS submount with a SiO 2 thickness of 297 A¿), and even to a value as high as 1000 V (FC-PLED at a SiO 2 thickness of 167 A¿), which are much higher than the PLED industrial test value of 150 V at -5 V/-10 ¿ A criterion and are also much more robust than the previous academic reports.</description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/TED.2009.2033774</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>IEEE</publisher><subject>Electrostatic damage (ESD) ; Electrostatic discharge ; Fabrication ; flip-chip light-emitting diode (FCLED) ; Gallium nitride ; Leakage current ; Light emitting diodes ; metal-oxide-silicon (MOS) submount ; reliabilty ; Surge protection ; Surges</subject><ispartof>IEEE transactions on electron devices, 2010-01, Vol.57 (1), p.119-124</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c294t-5a67d6617b59c947a1af85ff79203ab371f5cfdc6373ec803782733b50da64c03</citedby><cites>FETCH-LOGICAL-c294t-5a67d6617b59c947a1af85ff79203ab371f5cfdc6373ec803782733b50da64c03</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/5340648$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/5340648$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Chang, Liann-Be</creatorcontrib><creatorcontrib>Chiang, Kuo-Ling</creatorcontrib><creatorcontrib>Chang, Hsin-Yi</creatorcontrib><creatorcontrib>Jeng, Ming-Jer</creatorcontrib><creatorcontrib>Yen, Chia-Yi</creatorcontrib><creatorcontrib>Lin, Cheng-Chen</creatorcontrib><creatorcontrib>Chang, Yuan-Hsiao</creatorcontrib><creatorcontrib>Lai, Mu-Jen</creatorcontrib><creatorcontrib>Lee, Yu-Lin</creatorcontrib><creatorcontrib>Soong, Tai-Wei</creatorcontrib><title>Electrostatic Reliability Characteristics of GaN Flip-Chip Power Light-Emitting Diodes With Metal-Oxide-Silicon Submount</title><title>IEEE transactions on electron devices</title><addtitle>TED</addtitle><description>The electrostatic reliability characteristics of gallium nitride flip-chip (FC) power light-emitting diodes (PLEDs) with metal-oxide-silicon (MOS) submount are investigated for the first time. The electrostatic damage reliability of the reported diode submount and that of our proposed simple structure MOS submount are fabricated and compared. Their corresponding electrostatic protection capabilities are increased from 200 V (conventional PLED) to 500 V (FC-PLED on diode submount), to 500 V (FC-PLED on MOS submount with a SiO 2 thickness of 297 A¿), and even to a value as high as 1000 V (FC-PLED at a SiO 2 thickness of 167 A¿), which are much higher than the PLED industrial test value of 150 V at -5 V/-10 ¿ A criterion and are also much more robust than the previous academic reports.</description><subject>Electrostatic damage (ESD)</subject><subject>Electrostatic discharge</subject><subject>Fabrication</subject><subject>flip-chip light-emitting diode (FCLED)</subject><subject>Gallium nitride</subject><subject>Leakage current</subject><subject>Light emitting diodes</subject><subject>metal-oxide-silicon (MOS) submount</subject><subject>reliabilty</subject><subject>Surge protection</subject><subject>Surges</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kN1LwzAUxYMoOKfvgi958i0zadKkeZS6TWE6cRMfS5qma6Qfs0lx--_N2PDlXi73nAPnB8AtwRNCsHxYT58mEcYyDEqFYGdgROJYIMkZPwcjjEmCJE3oJbhy7jucnLFoBHbT2mjfd84rbzX8MLVVua2t38O0Ur3S3vTWhZeDXQnn6g3OartFaWW38L37NT1c2E3l0bSx3tt2A59sVxgHv6yv4KvxqkbLnS0MWoVQ3bVwNeRNN7T-GlyUqnbm5rTH4HM2XafPaLGcv6SPC6QjyTyKFRcF50TksdSSCUVUmcRlKWToqXIqSBnrstCcCmp0gqlIIkFpHuNCcaYxHYP7Y-62734G43zWWKdNXavWdIPLKKcskUwGIT4KdaDhelNm2942qt9nBGcHxFlAnB0QZyfEwXJ3tFhjzL88pgxzltA_Inp4mg</recordid><startdate>201001</startdate><enddate>201001</enddate><creator>Chang, Liann-Be</creator><creator>Chiang, Kuo-Ling</creator><creator>Chang, Hsin-Yi</creator><creator>Jeng, Ming-Jer</creator><creator>Yen, Chia-Yi</creator><creator>Lin, Cheng-Chen</creator><creator>Chang, Yuan-Hsiao</creator><creator>Lai, Mu-Jen</creator><creator>Lee, Yu-Lin</creator><creator>Soong, Tai-Wei</creator><general>IEEE</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>F28</scope><scope>FR3</scope><scope>L7M</scope></search><sort><creationdate>201001</creationdate><title>Electrostatic Reliability Characteristics of GaN Flip-Chip Power Light-Emitting Diodes With Metal-Oxide-Silicon Submount</title><author>Chang, Liann-Be ; Chiang, Kuo-Ling ; Chang, Hsin-Yi ; Jeng, Ming-Jer ; Yen, Chia-Yi ; Lin, Cheng-Chen ; Chang, Yuan-Hsiao ; Lai, Mu-Jen ; Lee, Yu-Lin ; Soong, Tai-Wei</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c294t-5a67d6617b59c947a1af85ff79203ab371f5cfdc6373ec803782733b50da64c03</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2010</creationdate><topic>Electrostatic damage (ESD)</topic><topic>Electrostatic discharge</topic><topic>Fabrication</topic><topic>flip-chip light-emitting diode (FCLED)</topic><topic>Gallium nitride</topic><topic>Leakage current</topic><topic>Light emitting diodes</topic><topic>metal-oxide-silicon (MOS) submount</topic><topic>reliabilty</topic><topic>Surge protection</topic><topic>Surges</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Chang, Liann-Be</creatorcontrib><creatorcontrib>Chiang, Kuo-Ling</creatorcontrib><creatorcontrib>Chang, Hsin-Yi</creatorcontrib><creatorcontrib>Jeng, Ming-Jer</creatorcontrib><creatorcontrib>Yen, Chia-Yi</creatorcontrib><creatorcontrib>Lin, Cheng-Chen</creatorcontrib><creatorcontrib>Chang, Yuan-Hsiao</creatorcontrib><creatorcontrib>Lai, Mu-Jen</creatorcontrib><creatorcontrib>Lee, Yu-Lin</creatorcontrib><creatorcontrib>Soong, Tai-Wei</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Chang, Liann-Be</au><au>Chiang, Kuo-Ling</au><au>Chang, Hsin-Yi</au><au>Jeng, Ming-Jer</au><au>Yen, Chia-Yi</au><au>Lin, Cheng-Chen</au><au>Chang, Yuan-Hsiao</au><au>Lai, Mu-Jen</au><au>Lee, Yu-Lin</au><au>Soong, Tai-Wei</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Electrostatic Reliability Characteristics of GaN Flip-Chip Power Light-Emitting Diodes With Metal-Oxide-Silicon Submount</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>2010-01</date><risdate>2010</risdate><volume>57</volume><issue>1</issue><spage>119</spage><epage>124</epage><pages>119-124</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract>The electrostatic reliability characteristics of gallium nitride flip-chip (FC) power light-emitting diodes (PLEDs) with metal-oxide-silicon (MOS) submount are investigated for the first time. The electrostatic damage reliability of the reported diode submount and that of our proposed simple structure MOS submount are fabricated and compared. Their corresponding electrostatic protection capabilities are increased from 200 V (conventional PLED) to 500 V (FC-PLED on diode submount), to 500 V (FC-PLED on MOS submount with a SiO 2 thickness of 297 A¿), and even to a value as high as 1000 V (FC-PLED at a SiO 2 thickness of 167 A¿), which are much higher than the PLED industrial test value of 150 V at -5 V/-10 ¿ A criterion and are also much more robust than the previous academic reports.</abstract><pub>IEEE</pub><doi>10.1109/TED.2009.2033774</doi><tpages>6</tpages></addata></record> |
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| source | IEEE Electronic Library (IEL) |
| subjects | Electrostatic damage (ESD) Electrostatic discharge Fabrication flip-chip light-emitting diode (FCLED) Gallium nitride Leakage current Light emitting diodes metal-oxide-silicon (MOS) submount reliabilty Surge protection Surges |
| title | Electrostatic Reliability Characteristics of GaN Flip-Chip Power Light-Emitting Diodes With Metal-Oxide-Silicon Submount |
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