Robust Low Oxygen Content Cu Alloy for Scaled-Down ULSI Interconnects Based on Metallurgical Thermodynamic Principles

A low oxygen content (LOC) CuAl alloy with no barrier metal (Ta) oxidation was obtained using an oxygen absorption process based on metallurgical thermodynamic principles. LOC CuAl dual damascene interconnects (DDIs) were successfully implemented into 45-nm-node LSIs with 140-nm-pitched lines and 70...

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Veröffentlicht in:	IEEE transactions on electron devices 2009-08, Vol.56 (8), p.1579-1587
Hauptverfasser:	Hayashi, Y., Abe, M., Tada, M., Narihiro, M., Tagami, M., Ueki, M., Inoue, N., Ito, F., Yamamoto, H., Takeuchi, T., Saito, S., Onodera, T., Furutake, N.
Format:	Artikel
Sprache:	eng
Schlagworte:	Annealing Applied sciences Atomic layer deposition Barriers CONNECTORS (ELECTRICAL) Copper COPPER ALUMINUM ALLOYS damascene interconnects DEPOSITION Design. Technologies. Operation analysis. Testing ELECTROMIGRATION Electronics Exact sciences and technology Integrated circuits INTERMETALLIC COMPOUNDS LSI Metallurgy Metals Microelectronic fabrication (materials and surfaces technology) OXIDATION OXYGEN Oxygen content Reliability Resistance Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Tantalum THERMODYNAMIC PROPERTIES Thermodynamics
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