Hot-Carrier and Fowler-Nordheim (FN) Tunneling Stresses on RF Reliability of 40-nm PMOSFETs With and Without SiGe Source/Drain
In this brief, RF reliabilities of hot-carrier and Fowler-Nordheim (FN) tunneling stresses on 40-nm PMOSFETs with and without SiGe source/drain (S/D) are studied and compared in detail. The results show that even the strained device with SiGe S/D has a better RF performance; however, its RF reliabil...
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| Veröffentlicht in: | IEEE transactions on electron devices 2009-04, Vol.56 (4), p.678-682 |
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| creator | Mao-Chyuan Tang Yean-Kuen Fang Chen, D.C. Chune-Sin Yeh |
| description | In this brief, RF reliabilities of hot-carrier and Fowler-Nordheim (FN) tunneling stresses on 40-nm PMOSFETs with and without SiGe source/drain (S/D) are studied and compared in detail. The results show that even the strained device with SiGe S/D has a better RF performance; however, its RF reliabilities after both hot-carrier and FN tunneling stresses are deteriorated remarkably by strain-induced defects. In addition, because the SiGe S/D strain-induced defects are mostly located at the surface of the extension of S/D, but not at the channel, the degradation difference between the strained and nonstrained PMOSFETs becomes less as the stress changes from the hot carrier (gate stress voltage V gstr = drain stress voltaged V dstr )to the vertical-only, i.e., the FN tunneling stress(V dstr = 0 but with some V gstr ). |
| doi_str_mv | 10.1109/TED.2009.2012523 |
| format | Article |
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The results show that even the strained device with SiGe S/D has a better RF performance; however, its RF reliabilities after both hot-carrier and FN tunneling stresses are deteriorated remarkably by strain-induced defects. In addition, because the SiGe S/D strain-induced defects are mostly located at the surface of the extension of S/D, but not at the channel, the degradation difference between the strained and nonstrained PMOSFETs becomes less as the stress changes from the hot carrier (gate stress voltage V gstr = drain stress voltaged V dstr )to the vertical-only, i.e., the FN tunneling stress(V dstr = 0 but with some V gstr ).</description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/TED.2009.2012523</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Applied sciences ; Cutoff frequency ; Degradation ; Electronics ; Exact sciences and technology ; MOSFETs ; Radio frequency ; Reliability ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; SiGe source/drain (S/D) ; Silicon germanium ; strained PMOSFET ; Stress ; threshold voltage ; transconductance ; Transistors ; Tunneling</subject><ispartof>IEEE transactions on electron devices, 2009-04, Vol.56 (4), p.678-682</ispartof><rights>2009 INIST-CNRS</rights><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2009</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c351t-ccd55de0a9032e1829011715c4deb4e8efb4d689f5494c2983f0f50178ed6c043</citedby><cites>FETCH-LOGICAL-c351t-ccd55de0a9032e1829011715c4deb4e8efb4d689f5494c2983f0f50178ed6c043</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/4797847$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/4797847$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=21742033$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Mao-Chyuan Tang</creatorcontrib><creatorcontrib>Yean-Kuen Fang</creatorcontrib><creatorcontrib>Chen, D.C.</creatorcontrib><creatorcontrib>Chune-Sin Yeh</creatorcontrib><title>Hot-Carrier and Fowler-Nordheim (FN) Tunneling Stresses on RF Reliability of 40-nm PMOSFETs With and Without SiGe Source/Drain</title><title>IEEE transactions on electron devices</title><addtitle>TED</addtitle><description>In this brief, RF reliabilities of hot-carrier and Fowler-Nordheim (FN) tunneling stresses on 40-nm PMOSFETs with and without SiGe source/drain (S/D) are studied and compared in detail. The results show that even the strained device with SiGe S/D has a better RF performance; however, its RF reliabilities after both hot-carrier and FN tunneling stresses are deteriorated remarkably by strain-induced defects. In addition, because the SiGe S/D strain-induced defects are mostly located at the surface of the extension of S/D, but not at the channel, the degradation difference between the strained and nonstrained PMOSFETs becomes less as the stress changes from the hot carrier (gate stress voltage V gstr = drain stress voltaged V dstr )to the vertical-only, i.e., the FN tunneling stress(V dstr = 0 but with some V gstr ).</description><subject>Applied sciences</subject><subject>Cutoff frequency</subject><subject>Degradation</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>MOSFETs</subject><subject>Radio frequency</subject><subject>Reliability</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>SiGe source/drain (S/D)</subject><subject>Silicon germanium</subject><subject>strained PMOSFET</subject><subject>Stress</subject><subject>threshold voltage</subject><subject>transconductance</subject><subject>Transistors</subject><subject>Tunneling</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2009</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNpdkc1PGzEQxa2KSg1p75W4WEig9rDgz137iAKBShQqkqpHy_HOgtHGBntXFRf-dpwm4tCL7fH83tNoHkJfKTmhlOjT5cX5CSNEl4MyyfgHNKFSNpWuRb2HJoRQVWmu-Ce0n_NjKWsh2AS9XsWhmtmUPCRsQ4vn8W8PqbqJqX0Av8bf5jff8XIMAXof7vFiSJAzZBwDvpvju_JrV773wwuOHRakCmv86-ftYn6xzPiPHx7-mW4ecRzwwl8CXsQxOTg9T9aHz-hjZ_sMX3b3FP0uytlVdX17-WN2dl05LulQOddK2QKxmnAGVDFNKG2odKKFlQAF3Uq0tdKdFFo4phXvSCcJbRS0tSOCT9Hx1vcpxecR8mDWPjvoexsgjtlwIQmnZW1TdPgf-FjGDWU2o2TDmKRMF4hsIZdizgk685T82qYXQ4nZpGFKGmaThtmlUSRHO1-bne27ZIPz-V3HaCMY4RvuYMt5AHhvi0Y3SjT8DWTYkD4</recordid><startdate>20090401</startdate><enddate>20090401</enddate><creator>Mao-Chyuan Tang</creator><creator>Yean-Kuen Fang</creator><creator>Chen, D.C.</creator><creator>Chune-Sin Yeh</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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Microelectronics. Optoelectronics. Solid state devices</topic><topic>SiGe source/drain (S/D)</topic><topic>Silicon germanium</topic><topic>strained PMOSFET</topic><topic>Stress</topic><topic>threshold voltage</topic><topic>transconductance</topic><topic>Transistors</topic><topic>Tunneling</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Mao-Chyuan Tang</creatorcontrib><creatorcontrib>Yean-Kuen Fang</creatorcontrib><creatorcontrib>Chen, D.C.</creatorcontrib><creatorcontrib>Chune-Sin Yeh</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Mao-Chyuan Tang</au><au>Yean-Kuen Fang</au><au>Chen, D.C.</au><au>Chune-Sin Yeh</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Hot-Carrier and Fowler-Nordheim (FN) Tunneling Stresses on RF Reliability of 40-nm PMOSFETs With and Without SiGe Source/Drain</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>2009-04-01</date><risdate>2009</risdate><volume>56</volume><issue>4</issue><spage>678</spage><epage>682</epage><pages>678-682</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract>In this brief, RF reliabilities of hot-carrier and Fowler-Nordheim (FN) tunneling stresses on 40-nm PMOSFETs with and without SiGe source/drain (S/D) are studied and compared in detail. The results show that even the strained device with SiGe S/D has a better RF performance; however, its RF reliabilities after both hot-carrier and FN tunneling stresses are deteriorated remarkably by strain-induced defects. In addition, because the SiGe S/D strain-induced defects are mostly located at the surface of the extension of S/D, but not at the channel, the degradation difference between the strained and nonstrained PMOSFETs becomes less as the stress changes from the hot carrier (gate stress voltage V gstr = drain stress voltaged V dstr )to the vertical-only, i.e., the FN tunneling stress(V dstr = 0 but with some V gstr ).</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/TED.2009.2012523</doi><tpages>5</tpages></addata></record> |
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| identifier | ISSN: 0018-9383 |
| ispartof | IEEE transactions on electron devices, 2009-04, Vol.56 (4), p.678-682 |
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| source | IEEE Electronic Library (IEL) |
| subjects | Applied sciences Cutoff frequency Degradation Electronics Exact sciences and technology MOSFETs Radio frequency Reliability Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices SiGe source/drain (S/D) Silicon germanium strained PMOSFET Stress threshold voltage transconductance Transistors Tunneling |
| title | Hot-Carrier and Fowler-Nordheim (FN) Tunneling Stresses on RF Reliability of 40-nm PMOSFETs With and Without SiGe Source/Drain |
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