Influence of Concurrent Electrothermal and Avalanche Effects on the Safe Operating Area of Multifinger Bipolar Transistors
The impact of the concurrent action of electrothermal and avalanche effects on the reduction of the safe operating area is experimentally investigated for a wide number of single-, two-, and three-finger bipolar transistors fabricated in SiGe, GaAs, and silicon-on-glass technologies. The results of...
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| Veröffentlicht in: | IEEE transactions on electron devices 2009-03, Vol.56 (3), p.483-491 |
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| container_title | IEEE transactions on electron devices |
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| creator | La Spina, L. d'Alessandro, V. Russo, S. Rinaldi, N. Nanver, L.K. |
| description | The impact of the concurrent action of electrothermal and avalanche effects on the reduction of the safe operating area is experimentally investigated for a wide number of single-, two-, and three-finger bipolar transistors fabricated in SiGe, GaAs, and silicon-on-glass technologies. The results of the analysis are substantiated by a SPICE-like simulation tool that allows the monitoring of the temperatures of the individual fingers and provides an in-depth understanding of the individual influence of the positive feedback mechanisms. Design strategies for minimizing the effects on device operation, like the implementation of ballasting resistors and emitter segmentation, are also analyzed. |
| doi_str_mv | 10.1109/TED.2008.2011574 |
| format | Article |
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The results of the analysis are substantiated by a SPICE-like simulation tool that allows the monitoring of the temperatures of the individual fingers and provides an in-depth understanding of the individual influence of the positive feedback mechanisms. Design strategies for minimizing the effects on device operation, like the implementation of ballasting resistors and emitter segmentation, are also analyzed.</description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/TED.2008.2011574</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Applied sciences ; Avalanche effect ; Avalanches ; ballasting resistors ; bipolar junction transistor (BJT) ; Bipolar transistors ; breakdown voltage ; Circuit properties ; Current measurement ; Devices ; Electric, optical and optoelectronic circuits ; Electronic equipment and fabrication. Passive components, printed wiring boards, connectics ; Electronics ; electrothermal effects ; emitter ballasting ; emitter segmentation ; Exact sciences and technology ; Gallium arsenide ; Gallium arsenides ; heterojunction bipolar transistor (HBT) ; impact ionization (II) ; Integrated circuits ; Integrated optics. Optical fibers and wave guides ; multifinger transistor ; Optical and optoelectronic circuits ; Positive feedback ; Resistance ; safe operating area (SOA) ; self-heating ; Semiconductor devices ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Semiconductor optical amplifiers ; Silicon germanides ; Silicon germanium ; silicon-on-glass (SOG) ; thermal coupling ; thermal instability ; Thermal resistance ; Transistors</subject><ispartof>IEEE transactions on electron devices, 2009-03, Vol.56 (3), p.483-491</ispartof><rights>2009 INIST-CNRS</rights><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2009</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c383t-76fb058c104549160ace59dcb48440a548bab159bd5b4a0060e42998b8265d113</citedby><cites>FETCH-LOGICAL-c383t-76fb058c104549160ace59dcb48440a548bab159bd5b4a0060e42998b8265d113</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/4785491$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/4785491$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=21471703$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>La Spina, L.</creatorcontrib><creatorcontrib>d'Alessandro, V.</creatorcontrib><creatorcontrib>Russo, S.</creatorcontrib><creatorcontrib>Rinaldi, N.</creatorcontrib><creatorcontrib>Nanver, L.K.</creatorcontrib><title>Influence of Concurrent Electrothermal and Avalanche Effects on the Safe Operating Area of Multifinger Bipolar Transistors</title><title>IEEE transactions on electron devices</title><addtitle>TED</addtitle><description>The impact of the concurrent action of electrothermal and avalanche effects on the reduction of the safe operating area is experimentally investigated for a wide number of single-, two-, and three-finger bipolar transistors fabricated in SiGe, GaAs, and silicon-on-glass technologies. The results of the analysis are substantiated by a SPICE-like simulation tool that allows the monitoring of the temperatures of the individual fingers and provides an in-depth understanding of the individual influence of the positive feedback mechanisms. Design strategies for minimizing the effects on device operation, like the implementation of ballasting resistors and emitter segmentation, are also analyzed.</description><subject>Applied sciences</subject><subject>Avalanche effect</subject><subject>Avalanches</subject><subject>ballasting resistors</subject><subject>bipolar junction transistor (BJT)</subject><subject>Bipolar transistors</subject><subject>breakdown voltage</subject><subject>Circuit properties</subject><subject>Current measurement</subject><subject>Devices</subject><subject>Electric, optical and optoelectronic circuits</subject><subject>Electronic equipment and fabrication. Passive components, printed wiring boards, connectics</subject><subject>Electronics</subject><subject>electrothermal effects</subject><subject>emitter ballasting</subject><subject>emitter segmentation</subject><subject>Exact sciences and technology</subject><subject>Gallium arsenide</subject><subject>Gallium arsenides</subject><subject>heterojunction bipolar transistor (HBT)</subject><subject>impact ionization (II)</subject><subject>Integrated circuits</subject><subject>Integrated optics. Optical fibers and wave guides</subject><subject>multifinger transistor</subject><subject>Optical and optoelectronic circuits</subject><subject>Positive feedback</subject><subject>Resistance</subject><subject>safe operating area (SOA)</subject><subject>self-heating</subject><subject>Semiconductor devices</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Semiconductor optical amplifiers</subject><subject>Silicon germanides</subject><subject>Silicon germanium</subject><subject>silicon-on-glass (SOG)</subject><subject>thermal coupling</subject><subject>thermal instability</subject><subject>Thermal resistance</subject><subject>Transistors</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2009</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNp9kc9vFCEUx4nRxLX1buKFmKinaR8zwMBxu67apKaHrmfCsA87DQsrzJjYv17W3fTgwQsE3ud9348vIW8YXDAG-nKz_nTRAqh6MCZ6_owsmBB9oyWXz8kCgKlGd6p7SV6V8lCfkvN2QR6vow8zRoc0ebpK0c05Y5zoOqCbcpruMe9soDZu6fKXDTa6e6Rr72u00BRpBeid9Uhv95jtNMYfdJnRHtS-zWEaff3BTK_GfQo20022sYxlSrmckxfehoKvT_cZ-f55vVl9bW5uv1yvljeNq-1OTS_9AEI5BlxwzSRYh0Jv3cAV52AFV4MdmNDDVgzcAkhA3mqtBtVKsWWsOyMfj7r7nH7OWCazG4vDUGfBNBejpFa87bmq5If_kh0XLe8VVPDdP-BDmnOsUxglpG57-FsXjpDLqZSM3uzzuLP5t2FgDp6Z6pk5eGZOntWU9yddW5wNvi7LjeUpr2W8Zz10lXt75EZEfArX1g4b6v4ACP6e2A</recordid><startdate>20090301</startdate><enddate>20090301</enddate><creator>La Spina, L.</creator><creator>d'Alessandro, V.</creator><creator>Russo, S.</creator><creator>Rinaldi, N.</creator><creator>Nanver, L.K.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>F28</scope><scope>FR3</scope></search><sort><creationdate>20090301</creationdate><title>Influence of Concurrent Electrothermal and Avalanche Effects on the Safe Operating Area of Multifinger Bipolar Transistors</title><author>La Spina, L. ; d'Alessandro, V. ; Russo, S. ; Rinaldi, N. ; Nanver, L.K.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c383t-76fb058c104549160ace59dcb48440a548bab159bd5b4a0060e42998b8265d113</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2009</creationdate><topic>Applied sciences</topic><topic>Avalanche effect</topic><topic>Avalanches</topic><topic>ballasting resistors</topic><topic>bipolar junction transistor (BJT)</topic><topic>Bipolar transistors</topic><topic>breakdown voltage</topic><topic>Circuit properties</topic><topic>Current measurement</topic><topic>Devices</topic><topic>Electric, optical and optoelectronic circuits</topic><topic>Electronic equipment and fabrication. Passive components, printed wiring boards, connectics</topic><topic>Electronics</topic><topic>electrothermal effects</topic><topic>emitter ballasting</topic><topic>emitter segmentation</topic><topic>Exact sciences and technology</topic><topic>Gallium arsenide</topic><topic>Gallium arsenides</topic><topic>heterojunction bipolar transistor (HBT)</topic><topic>impact ionization (II)</topic><topic>Integrated circuits</topic><topic>Integrated optics. Optical fibers and wave guides</topic><topic>multifinger transistor</topic><topic>Optical and optoelectronic circuits</topic><topic>Positive feedback</topic><topic>Resistance</topic><topic>safe operating area (SOA)</topic><topic>self-heating</topic><topic>Semiconductor devices</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Semiconductor optical amplifiers</topic><topic>Silicon germanides</topic><topic>Silicon germanium</topic><topic>silicon-on-glass (SOG)</topic><topic>thermal coupling</topic><topic>thermal instability</topic><topic>Thermal resistance</topic><topic>Transistors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>La Spina, L.</creatorcontrib><creatorcontrib>d'Alessandro, V.</creatorcontrib><creatorcontrib>Russo, S.</creatorcontrib><creatorcontrib>Rinaldi, N.</creatorcontrib><creatorcontrib>Nanver, L.K.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>La Spina, L.</au><au>d'Alessandro, V.</au><au>Russo, S.</au><au>Rinaldi, N.</au><au>Nanver, L.K.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Influence of Concurrent Electrothermal and Avalanche Effects on the Safe Operating Area of Multifinger Bipolar Transistors</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>2009-03-01</date><risdate>2009</risdate><volume>56</volume><issue>3</issue><spage>483</spage><epage>491</epage><pages>483-491</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract>The impact of the concurrent action of electrothermal and avalanche effects on the reduction of the safe operating area is experimentally investigated for a wide number of single-, two-, and three-finger bipolar transistors fabricated in SiGe, GaAs, and silicon-on-glass technologies. The results of the analysis are substantiated by a SPICE-like simulation tool that allows the monitoring of the temperatures of the individual fingers and provides an in-depth understanding of the individual influence of the positive feedback mechanisms. Design strategies for minimizing the effects on device operation, like the implementation of ballasting resistors and emitter segmentation, are also analyzed.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/TED.2008.2011574</doi><tpages>9</tpages></addata></record> |
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| source | IEEE Electronic Library (IEL) |
| subjects | Applied sciences Avalanche effect Avalanches ballasting resistors bipolar junction transistor (BJT) Bipolar transistors breakdown voltage Circuit properties Current measurement Devices Electric, optical and optoelectronic circuits Electronic equipment and fabrication. Passive components, printed wiring boards, connectics Electronics electrothermal effects emitter ballasting emitter segmentation Exact sciences and technology Gallium arsenide Gallium arsenides heterojunction bipolar transistor (HBT) impact ionization (II) Integrated circuits Integrated optics. Optical fibers and wave guides multifinger transistor Optical and optoelectronic circuits Positive feedback Resistance safe operating area (SOA) self-heating Semiconductor devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Semiconductor optical amplifiers Silicon germanides Silicon germanium silicon-on-glass (SOG) thermal coupling thermal instability Thermal resistance Transistors |
| title | Influence of Concurrent Electrothermal and Avalanche Effects on the Safe Operating Area of Multifinger Bipolar Transistors |
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