Explicit Analytical Charge and Capacitance Models of Undoped Double-Gate MOSFETs

An analytical, explicit, and continuous-charge model for undoped symmetrical double-gate (DG) MOSFETs is presented. This charge model allows obtaining analytical expressions of all total capacitances. The model is based on a unified-charge-control model derived from Poisson's equation and is va...

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Veröffentlicht in:	IEEE transactions on electron devices 2007-07, Vol.54 (7), p.1718-1724
Hauptverfasser:	Moldovan, O., Jimenez, D., Guitart, J.R., Chaves, F.A., Iniguez, B.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Capacitance Charge Compact device modeling Devices Double-gate (DG) MOSFET Drains Electronics Exact sciences and technology intrinsic capacitances Mathematical analysis Mathematical models MOSFETs Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silicon films Transistors
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