Explicit Analytical Charge and Capacitance Models of Undoped Double-Gate MOSFETs
An analytical, explicit, and continuous-charge model for undoped symmetrical double-gate (DG) MOSFETs is presented. This charge model allows obtaining analytical expressions of all total capacitances. The model is based on a unified-charge-control model derived from Poisson's equation and is va...
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| Veröffentlicht in: | IEEE transactions on electron devices 2007-07, Vol.54 (7), p.1718-1724 |
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| container_end_page | 1724 |
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| container_issue | 7 |
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| container_title | IEEE transactions on electron devices |
| container_volume | 54 |
| creator | Moldovan, O. Jimenez, D. Guitart, J.R. Chaves, F.A. Iniguez, B. |
| description | An analytical, explicit, and continuous-charge model for undoped symmetrical double-gate (DG) MOSFETs is presented. This charge model allows obtaining analytical expressions of all total capacitances. The model is based on a unified-charge-control model derived from Poisson's equation and is valid from below to well above threshold, showing a smooth transition between the different regimes. The drain current, charge, and capacitances are written as continuous explicit functions of the applied bias. We obtained very good agreement between the calculated capacitance characteristics and 2-D numerical device simulations, for different silicon film thicknesses. |
| doi_str_mv | 10.1109/TED.2007.899402 |
| format | Article |
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This charge model allows obtaining analytical expressions of all total capacitances. The model is based on a unified-charge-control model derived from Poisson's equation and is valid from below to well above threshold, showing a smooth transition between the different regimes. The drain current, charge, and capacitances are written as continuous explicit functions of the applied bias. We obtained very good agreement between the calculated capacitance characteristics and 2-D numerical device simulations, for different silicon film thicknesses.</description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/TED.2007.899402</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Applied sciences ; Capacitance ; Charge ; Compact device modeling ; Devices ; Double-gate (DG) MOSFET ; Drains ; Electronics ; Exact sciences and technology ; intrinsic capacitances ; Mathematical analysis ; Mathematical models ; MOSFETs ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Silicon films ; Transistors</subject><ispartof>IEEE transactions on electron devices, 2007-07, Vol.54 (7), p.1718-1724</ispartof><rights>2007 INIST-CNRS</rights><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2007</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c413t-400b07881501beaa117a8132be6644c972cf088ddc016cbdd9b55ba29ee7c24a3</citedby><cites>FETCH-LOGICAL-c413t-400b07881501beaa117a8132be6644c972cf088ddc016cbdd9b55ba29ee7c24a3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/4252372$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/4252372$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=18898908$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Moldovan, O.</creatorcontrib><creatorcontrib>Jimenez, D.</creatorcontrib><creatorcontrib>Guitart, J.R.</creatorcontrib><creatorcontrib>Chaves, F.A.</creatorcontrib><creatorcontrib>Iniguez, B.</creatorcontrib><title>Explicit Analytical Charge and Capacitance Models of Undoped Double-Gate MOSFETs</title><title>IEEE transactions on electron devices</title><addtitle>TED</addtitle><description>An analytical, explicit, and continuous-charge model for undoped symmetrical double-gate (DG) MOSFETs is presented. This charge model allows obtaining analytical expressions of all total capacitances. The model is based on a unified-charge-control model derived from Poisson's equation and is valid from below to well above threshold, showing a smooth transition between the different regimes. The drain current, charge, and capacitances are written as continuous explicit functions of the applied bias. We obtained very good agreement between the calculated capacitance characteristics and 2-D numerical device simulations, for different silicon film thicknesses.</description><subject>Applied sciences</subject><subject>Capacitance</subject><subject>Charge</subject><subject>Compact device modeling</subject><subject>Devices</subject><subject>Double-gate (DG) MOSFET</subject><subject>Drains</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>intrinsic capacitances</subject><subject>Mathematical analysis</subject><subject>Mathematical models</subject><subject>MOSFETs</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. 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Microelectronics. Optoelectronics. Solid state devices</topic><topic>Silicon films</topic><topic>Transistors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Moldovan, O.</creatorcontrib><creatorcontrib>Jimenez, D.</creatorcontrib><creatorcontrib>Guitart, J.R.</creatorcontrib><creatorcontrib>Chaves, F.A.</creatorcontrib><creatorcontrib>Iniguez, B.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Moldovan, O.</au><au>Jimenez, D.</au><au>Guitart, J.R.</au><au>Chaves, F.A.</au><au>Iniguez, B.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Explicit Analytical Charge and Capacitance Models of Undoped Double-Gate MOSFETs</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>2007-07-01</date><risdate>2007</risdate><volume>54</volume><issue>7</issue><spage>1718</spage><epage>1724</epage><pages>1718-1724</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract>An analytical, explicit, and continuous-charge model for undoped symmetrical double-gate (DG) MOSFETs is presented. This charge model allows obtaining analytical expressions of all total capacitances. The model is based on a unified-charge-control model derived from Poisson's equation and is valid from below to well above threshold, showing a smooth transition between the different regimes. The drain current, charge, and capacitances are written as continuous explicit functions of the applied bias. We obtained very good agreement between the calculated capacitance characteristics and 2-D numerical device simulations, for different silicon film thicknesses.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/TED.2007.899402</doi><tpages>7</tpages></addata></record> |
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| source | IEEE Electronic Library (IEL) |
| subjects | Applied sciences Capacitance Charge Compact device modeling Devices Double-gate (DG) MOSFET Drains Electronics Exact sciences and technology intrinsic capacitances Mathematical analysis Mathematical models MOSFETs Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silicon films Transistors |
| title | Explicit Analytical Charge and Capacitance Models of Undoped Double-Gate MOSFETs |
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