A computationally efficient physics-based compact bipolar transistor model for circuit Design-part I: model formulation
A compact bipolar transistor model is presented that combines the simplicity of the SPICE Gummel-Poon model (SGPM) with some major features of HICUM. The new model, called HICUM/L0, is more physics-based and accurate than the SGPM and at the same time, from a computational point of view, suitable fo...
Gespeichert in:
Veröffentlicht in: | IEEE transactions on electron devices 2006-02, Vol.53 (2), p.279-286 |
---|---|
Hauptverfasser: | , , , |
Format: | Artikel |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
container_end_page | 286 |
---|---|
container_issue | 2 |
container_start_page | 279 |
container_title | IEEE transactions on electron devices |
container_volume | 53 |
creator | Schroter, M. Lehmann, S. Fregonese, S. Zimmer, T. |
description | A compact bipolar transistor model is presented that combines the simplicity of the SPICE Gummel-Poon model (SGPM) with some major features of HICUM. The new model, called HICUM/L0, is more physics-based and accurate than the SGPM and at the same time, from a computational point of view, suitable for simulating large circuits. The new model has been implemented in Verilog-A and, as compiled code, in various commercial circuit simulators. In Part I, the fundamental model formulation is presented along with a derivation of the most important equations. Experimental results are shown in Part II. |
doi_str_mv | 10.1109/TED.2005.862241 |
format | Article |
fullrecord | <record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_crossref_primary_10_1109_TED_2005_862241</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>1580865</ieee_id><sourcerecordid>27987259</sourcerecordid><originalsourceid>FETCH-LOGICAL-c415t-15309e06c7e994f5827c0e57f2b8bdacb114f0decaacc95c5b561c88297799e03</originalsourceid><addsrcrecordid>eNp9kUtr3DAUhUVpIdNJ11l0Ywpt6MITSbYsKbshjyYw0E26FvIduVGQLVeSW-bfV45DB7rISq_vnCvOQeiM4A0hWF483FxvKMZsIxpKa_IGrQhjvJRN3bxFK4yJKGUlqhP0PsanfGzqmq7Qn20Bvh-npJP1g3buUJius2DNkIrx8RAtxLLV0eyfOQ2paO3onQ5FCnqINiYfit7vjSu6vAMbYLKpuDbR_hzKUYdU3F8egX5yz5NO0btOu2g-vKxr9OP25uHqrtx9_3Z_td2VUBOWSsIqLA1ugBsp644JygEbxjvainavoSWk7vDegNYAkgFrWUNACCo5l1lYrdHXxfdROzUG2-twUF5bdbfdqfluDoZITn6TzJ4v7Bj8r8nEpHobwTinB-OnqISQlRQsh7hGX14lKZeCUyYz-Ok_8MlPIeec3RpGmobK2e1igSD4GIPp_n2UYDV3q3K3au5WLd1mxecXWx1Buy43ATYeZbyuGato5j4unDXGHJ-ZwHl69RdFYa0f</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>865166298</pqid></control><display><type>article</type><title>A computationally efficient physics-based compact bipolar transistor model for circuit Design-part I: model formulation</title><source>IEEE Electronic Library (IEL)</source><creator>Schroter, M. ; Lehmann, S. ; Fregonese, S. ; Zimmer, T.</creator><creatorcontrib>Schroter, M. ; Lehmann, S. ; Fregonese, S. ; Zimmer, T.</creatorcontrib><description>A compact bipolar transistor model is presented that combines the simplicity of the SPICE Gummel-Poon model (SGPM) with some major features of HICUM. The new model, called HICUM/L0, is more physics-based and accurate than the SGPM and at the same time, from a computational point of view, suitable for simulating large circuits. The new model has been implemented in Verilog-A and, as compiled code, in various commercial circuit simulators. In Part I, the fundamental model formulation is presented along with a derivation of the most important equations. Experimental results are shown in Part II.</description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/TED.2005.862241</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Analog circuits ; Analog high-frequency circuit design ; Analog integrated circuits ; Applied sciences ; Bipolar transistors ; Circuit properties ; Circuits ; compact transistor modeling ; Computational efficiency ; Derivation ; Electric, optical and optoelectronic circuits ; Electronic circuits ; Electronics ; Engineering Sciences ; Exact sciences and technology ; HICUM ; Integrated circuit design ; Mathematical analysis ; Mathematical models ; Micro and nanotechnologies ; Microelectronics ; Semiconductor device modeling ; Semiconductor devices ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Simulators ; SPICE ; Theoretical study. Circuits analysis and design ; Transistors</subject><ispartof>IEEE transactions on electron devices, 2006-02, Vol.53 (2), p.279-286</ispartof><rights>2006 INIST-CNRS</rights><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2006</rights><rights>Distributed under a Creative Commons Attribution 4.0 International License</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c415t-15309e06c7e994f5827c0e57f2b8bdacb114f0decaacc95c5b561c88297799e03</citedby><cites>FETCH-LOGICAL-c415t-15309e06c7e994f5827c0e57f2b8bdacb114f0decaacc95c5b561c88297799e03</cites><orcidid>0000-0002-1829-2633</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1580865$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>230,314,780,784,796,885,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1580865$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=17445532$$DView record in Pascal Francis$$Hfree_for_read</backlink><backlink>$$Uhttps://hal.science/hal-00181971$$DView record in HAL$$Hfree_for_read</backlink></links><search><creatorcontrib>Schroter, M.</creatorcontrib><creatorcontrib>Lehmann, S.</creatorcontrib><creatorcontrib>Fregonese, S.</creatorcontrib><creatorcontrib>Zimmer, T.</creatorcontrib><title>A computationally efficient physics-based compact bipolar transistor model for circuit Design-part I: model formulation</title><title>IEEE transactions on electron devices</title><addtitle>TED</addtitle><description>A compact bipolar transistor model is presented that combines the simplicity of the SPICE Gummel-Poon model (SGPM) with some major features of HICUM. The new model, called HICUM/L0, is more physics-based and accurate than the SGPM and at the same time, from a computational point of view, suitable for simulating large circuits. The new model has been implemented in Verilog-A and, as compiled code, in various commercial circuit simulators. In Part I, the fundamental model formulation is presented along with a derivation of the most important equations. Experimental results are shown in Part II.</description><subject>Analog circuits</subject><subject>Analog high-frequency circuit design</subject><subject>Analog integrated circuits</subject><subject>Applied sciences</subject><subject>Bipolar transistors</subject><subject>Circuit properties</subject><subject>Circuits</subject><subject>compact transistor modeling</subject><subject>Computational efficiency</subject><subject>Derivation</subject><subject>Electric, optical and optoelectronic circuits</subject><subject>Electronic circuits</subject><subject>Electronics</subject><subject>Engineering Sciences</subject><subject>Exact sciences and technology</subject><subject>HICUM</subject><subject>Integrated circuit design</subject><subject>Mathematical analysis</subject><subject>Mathematical models</subject><subject>Micro and nanotechnologies</subject><subject>Microelectronics</subject><subject>Semiconductor device modeling</subject><subject>Semiconductor devices</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Simulators</subject><subject>SPICE</subject><subject>Theoretical study. Circuits analysis and design</subject><subject>Transistors</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2006</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNp9kUtr3DAUhUVpIdNJ11l0Ywpt6MITSbYsKbshjyYw0E26FvIduVGQLVeSW-bfV45DB7rISq_vnCvOQeiM4A0hWF483FxvKMZsIxpKa_IGrQhjvJRN3bxFK4yJKGUlqhP0PsanfGzqmq7Qn20Bvh-npJP1g3buUJius2DNkIrx8RAtxLLV0eyfOQ2paO3onQ5FCnqINiYfit7vjSu6vAMbYLKpuDbR_hzKUYdU3F8egX5yz5NO0btOu2g-vKxr9OP25uHqrtx9_3Z_td2VUBOWSsIqLA1ugBsp644JygEbxjvainavoSWk7vDegNYAkgFrWUNACCo5l1lYrdHXxfdROzUG2-twUF5bdbfdqfluDoZITn6TzJ4v7Bj8r8nEpHobwTinB-OnqISQlRQsh7hGX14lKZeCUyYz-Ok_8MlPIeec3RpGmobK2e1igSD4GIPp_n2UYDV3q3K3au5WLd1mxecXWx1Buy43ATYeZbyuGato5j4unDXGHJ-ZwHl69RdFYa0f</recordid><startdate>20060201</startdate><enddate>20060201</enddate><creator>Schroter, M.</creator><creator>Lehmann, S.</creator><creator>Fregonese, S.</creator><creator>Zimmer, T.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>7U5</scope><scope>F28</scope><scope>FR3</scope><scope>1XC</scope><orcidid>https://orcid.org/0000-0002-1829-2633</orcidid></search><sort><creationdate>20060201</creationdate><title>A computationally efficient physics-based compact bipolar transistor model for circuit Design-part I: model formulation</title><author>Schroter, M. ; Lehmann, S. ; Fregonese, S. ; Zimmer, T.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c415t-15309e06c7e994f5827c0e57f2b8bdacb114f0decaacc95c5b561c88297799e03</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2006</creationdate><topic>Analog circuits</topic><topic>Analog high-frequency circuit design</topic><topic>Analog integrated circuits</topic><topic>Applied sciences</topic><topic>Bipolar transistors</topic><topic>Circuit properties</topic><topic>Circuits</topic><topic>compact transistor modeling</topic><topic>Computational efficiency</topic><topic>Derivation</topic><topic>Electric, optical and optoelectronic circuits</topic><topic>Electronic circuits</topic><topic>Electronics</topic><topic>Engineering Sciences</topic><topic>Exact sciences and technology</topic><topic>HICUM</topic><topic>Integrated circuit design</topic><topic>Mathematical analysis</topic><topic>Mathematical models</topic><topic>Micro and nanotechnologies</topic><topic>Microelectronics</topic><topic>Semiconductor device modeling</topic><topic>Semiconductor devices</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Simulators</topic><topic>SPICE</topic><topic>Theoretical study. Circuits analysis and design</topic><topic>Transistors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Schroter, M.</creatorcontrib><creatorcontrib>Lehmann, S.</creatorcontrib><creatorcontrib>Fregonese, S.</creatorcontrib><creatorcontrib>Zimmer, T.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>Hyper Article en Ligne (HAL)</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Schroter, M.</au><au>Lehmann, S.</au><au>Fregonese, S.</au><au>Zimmer, T.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A computationally efficient physics-based compact bipolar transistor model for circuit Design-part I: model formulation</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>2006-02-01</date><risdate>2006</risdate><volume>53</volume><issue>2</issue><spage>279</spage><epage>286</epage><pages>279-286</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract>A compact bipolar transistor model is presented that combines the simplicity of the SPICE Gummel-Poon model (SGPM) with some major features of HICUM. The new model, called HICUM/L0, is more physics-based and accurate than the SGPM and at the same time, from a computational point of view, suitable for simulating large circuits. The new model has been implemented in Verilog-A and, as compiled code, in various commercial circuit simulators. In Part I, the fundamental model formulation is presented along with a derivation of the most important equations. Experimental results are shown in Part II.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/TED.2005.862241</doi><tpages>8</tpages><orcidid>https://orcid.org/0000-0002-1829-2633</orcidid></addata></record> |
fulltext | fulltext_linktorsrc |
identifier | ISSN: 0018-9383 |
ispartof | IEEE transactions on electron devices, 2006-02, Vol.53 (2), p.279-286 |
issn | 0018-9383 1557-9646 |
language | eng |
recordid | cdi_crossref_primary_10_1109_TED_2005_862241 |
source | IEEE Electronic Library (IEL) |
subjects | Analog circuits Analog high-frequency circuit design Analog integrated circuits Applied sciences Bipolar transistors Circuit properties Circuits compact transistor modeling Computational efficiency Derivation Electric, optical and optoelectronic circuits Electronic circuits Electronics Engineering Sciences Exact sciences and technology HICUM Integrated circuit design Mathematical analysis Mathematical models Micro and nanotechnologies Microelectronics Semiconductor device modeling Semiconductor devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Simulators SPICE Theoretical study. Circuits analysis and design Transistors |
title | A computationally efficient physics-based compact bipolar transistor model for circuit Design-part I: model formulation |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-26T00%3A13%3A25IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=A%20computationally%20efficient%20physics-based%20compact%20bipolar%20transistor%20model%20for%20circuit%20Design-part%20I:%20model%20formulation&rft.jtitle=IEEE%20transactions%20on%20electron%20devices&rft.au=Schroter,%20M.&rft.date=2006-02-01&rft.volume=53&rft.issue=2&rft.spage=279&rft.epage=286&rft.pages=279-286&rft.issn=0018-9383&rft.eissn=1557-9646&rft.coden=IETDAI&rft_id=info:doi/10.1109/TED.2005.862241&rft_dat=%3Cproquest_RIE%3E27987259%3C/proquest_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=865166298&rft_id=info:pmid/&rft_ieee_id=1580865&rfr_iscdi=true |