Over-erase phenomenon in SONOS-type flash memory and its minimization using a hafnium oxide charge storage Layer
The over-erase phenomenon in the polysilicon-oxide-silicon nitride-oxide-silicon (SONOS) memory structure is minimized by using hafnium oxide or hafnium aluminum oxide to replace silicon nitride as the charge storage layer (the resulting structures are termed SOHOS devices, where the "H" d...
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| Veröffentlicht in: | IEEE transactions on electron devices 2004-07, Vol.51 (7), p.1143-1147 |
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| container_title | IEEE transactions on electron devices |
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| creator | Yan-Ny Tan Chim, W.-K. Byung Jin Cho Wee-Kiong Choi |
| description | The over-erase phenomenon in the polysilicon-oxide-silicon nitride-oxide-silicon (SONOS) memory structure is minimized by using hafnium oxide or hafnium aluminum oxide to replace silicon nitride as the charge storage layer (the resulting structures are termed SOHOS devices, where the "H" denotes the high dielectric constant material instead of silicon nitride). Unlike SONOS devices, SOHOS structures show a reduced over-erase phenomenon and self-limiting charge storage behavior under both erase and program operations. These are attributed to the differences in band offset and the crystallinity of the charge storage layer. |
| doi_str_mv | 10.1109/TED.2004.829861 |
| format | Article |
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Unlike SONOS devices, SOHOS structures show a reduced over-erase phenomenon and self-limiting charge storage behavior under both erase and program operations. These are attributed to the differences in band offset and the crystallinity of the charge storage layer.</description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/TED.2004.829861</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Aluminum oxide ; Charge ; Crystallinity ; Devices ; Dielectric constant ; Hafnium oxide ; Hot carriers ; Leakage currents ; Optimization ; Semiconductor device modeling ; Silicon nitride ; Thin film transistors</subject><ispartof>IEEE transactions on electron devices, 2004-07, Vol.51 (7), p.1143-1147</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. 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Unlike SONOS devices, SOHOS structures show a reduced over-erase phenomenon and self-limiting charge storage behavior under both erase and program operations. These are attributed to the differences in band offset and the crystallinity of the charge storage layer.</description><subject>Aluminum oxide</subject><subject>Charge</subject><subject>Crystallinity</subject><subject>Devices</subject><subject>Dielectric constant</subject><subject>Hafnium oxide</subject><subject>Hot carriers</subject><subject>Leakage currents</subject><subject>Optimization</subject><subject>Semiconductor device modeling</subject><subject>Silicon nitride</subject><subject>Thin film transistors</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2004</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNqN0T1rHDEQBmAREsjFSZ3CjUiRVHvW10qjMvgbjlxhpxa63VmfzK12I-0an399ZC5gcBFciEHwzDDMS8hXzpacM3tye362FIypJQgLmr8jC17XprJa6fdkwRiHykqQH8mnnO_LVyslFmRcP2CqMPmMdNxiHPryIg2R3qx_rW-qaT8i7XY-b2mP_ZD21MeWhinTPsTQhyc_heLnHOId9XTruxjmng6PoUXabH26Q5qnIflSV36P6TP50Pldxi__6hH5fXF-e3pVrdaX16c_V1WjOJ8q3RoBTWsaaW2rQXnFvQLTGcBGsw0IaLWxHTOy1u1GGVsbgUbabiN01wohj8iPw9wxDX9mzJPrQ25wt_MRhzk7sFoIUa5Q5Pf_SmGlFCDeAKGsxSx7A9S10FIX-O0VvB_mFMtdHIAFZhivCzo5oCYNOSfs3JhC79Peceaeo3clevccvTtEXzqODx0BEV-0ZKCllX8Bi_qo5A</recordid><startdate>20040701</startdate><enddate>20040701</enddate><creator>Yan-Ny Tan</creator><creator>Chim, W.-K.</creator><creator>Byung Jin Cho</creator><creator>Wee-Kiong Choi</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>7QQ</scope><scope>JG9</scope><scope>7QF</scope><scope>F28</scope><scope>FR3</scope></search><sort><creationdate>20040701</creationdate><title>Over-erase phenomenon in SONOS-type flash memory and its minimization using a hafnium oxide charge storage Layer</title><author>Yan-Ny Tan ; Chim, W.-K. ; Byung Jin Cho ; Wee-Kiong Choi</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c411t-6d728cd7c399d684a41a487f78ec60b828d679f07356db479572e739fb26fd223</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2004</creationdate><topic>Aluminum oxide</topic><topic>Charge</topic><topic>Crystallinity</topic><topic>Devices</topic><topic>Dielectric constant</topic><topic>Hafnium oxide</topic><topic>Hot carriers</topic><topic>Leakage currents</topic><topic>Optimization</topic><topic>Semiconductor device modeling</topic><topic>Silicon nitride</topic><topic>Thin film transistors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Yan-Ny Tan</creatorcontrib><creatorcontrib>Chim, W.-K.</creatorcontrib><creatorcontrib>Byung Jin Cho</creatorcontrib><creatorcontrib>Wee-Kiong Choi</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Ceramic Abstracts</collection><collection>Materials Research Database</collection><collection>Aluminium Industry Abstracts</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Yan-Ny Tan</au><au>Chim, W.-K.</au><au>Byung Jin Cho</au><au>Wee-Kiong Choi</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Over-erase phenomenon in SONOS-type flash memory and its minimization using a hafnium oxide charge storage Layer</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>2004-07-01</date><risdate>2004</risdate><volume>51</volume><issue>7</issue><spage>1143</spage><epage>1147</epage><pages>1143-1147</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract>The over-erase phenomenon in the polysilicon-oxide-silicon nitride-oxide-silicon (SONOS) memory structure is minimized by using hafnium oxide or hafnium aluminum oxide to replace silicon nitride as the charge storage layer (the resulting structures are termed SOHOS devices, where the "H" denotes the high dielectric constant material instead of silicon nitride). 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| identifier | ISSN: 0018-9383 |
| ispartof | IEEE transactions on electron devices, 2004-07, Vol.51 (7), p.1143-1147 |
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| language | eng |
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| source | IEEE Electronic Library (IEL) |
| subjects | Aluminum oxide Charge Crystallinity Devices Dielectric constant Hafnium oxide Hot carriers Leakage currents Optimization Semiconductor device modeling Silicon nitride Thin film transistors |
| title | Over-erase phenomenon in SONOS-type flash memory and its minimization using a hafnium oxide charge storage Layer |
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