Above-threshold parameter extraction and modeling for amorphous silicon thin-film transistors

This paper presents modeling and parameter extraction of the above-threshold characteristics of hydrogenated amorphous silicon (a-Si:H) thin-film transistors (TFTs) in both linear and saturation regions of operation. A bias- and geometry-independent definition for field effect mobility considering t...

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Veröffentlicht in:	IEEE transactions on electron devices 2003-11, Vol.50 (11), p.2227-2235
Hauptverfasser:	Servati, P., Striakhilev, D., Nathan, A.
Format:	Artikel
Sprache:	eng
Schlagworte:	Amorphous semiconductors Amorphous silicon Charge carrier mobility Circuits Contact resistance Devices Extraction Hydrogen Mathematical models Semiconductor device modeling Semiconductor devices Silicon Thin film transistors Transistors
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