1.5-nm gate oxide CMOS on [110] surface-oriented Si substrate

The dc and RF analog characteristics of ultrathin gate oxide CMOS on [110] surface-oriented Si substrates were investigated for the first time. The transconductance of p-MOSFETs on [110] substrates is 1.9 times greater than that on [100] substrates even in gate oxides in the direct-tunneling regime....

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	IEEE transactions on electron devices 2003-04, Vol.50 (4), p.1001-1008
Hauptverfasser:	Momose, H.S., Ohguro, T., Kojima, K., Nakamura, S., Toyoshima, Y.
Format:	Artikel
Sprache:	eng
Schlagworte:	CMOS analog integrated circuits Field programmable gate arrays Leakage currents MOSFETs Random noise Tunneling
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!