Substrate transfer for RF technologies

The constant pressure on performance improvement in RF processes is aimed at higher frequencies, less power consumption, and a higher integration level of high quality passives with digital active devices. Although excellent for the fabrication of active devices, it is the silicon substrate as a car...

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Bibliographische Detailangaben
Veröffentlicht in:	IEEE transactions on electron devices 2003-03, Vol.50 (3), p.747-757
Hauptverfasser:	Dekker, R., Baltus, P.G.M., Maas, H.G.R.
Format:	Artikel
Sprache:	eng
Schlagworte:	BiCMOS integrated circuits Bipolar integrated circuits Carriers Circuits Crosstalk Devices Electronics industry Glass Integrated circuit fabrication Integrated circuit noise Passive components Radio frequencies Semiconductors Silicon on insulator technology Silicon substrates Surface mounting Wafer-scale integration Wafers
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