Ultra-Low-Power Sub-1 V 29 ppm/°C Voltage Reference and Shared-Resistive Current Reference

This paper presents a curvature-compensated sub-1V voltage reference (VR) and a shared-resistive nanoampere current reference (CR) in a 130nm CMOS process. The CR is used to generate a bipolar junction transistor complementary-to-absolute-temperature voltage, which is summed up with a proportional-t...

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Veröffentlicht in:	IEEE transactions on circuits and systems. I, Regular papers Regular papers, 2023-03, Vol.70 (3), p.1030-1042
Hauptverfasser:	Shetty, Darshan, Steffan, Christoph, Holweg, Gerald, Bosch, Wolfgang, Grosinger, Jasmin
Format:	Artikel
Sprache:	eng
Schlagworte:	Bipolar transistors Chip formation current reference curvature compensation Electric potential high-precision Manganese Power consumption Resistors Room temperature sub-1V sub-threshold CMOS design temperature compensation Temperature dependence Temperature measurement Threshold voltage Transistors ultra-low-power Voltage Voltage reference voltage-current reference
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