Using Data Postcompensation and Predistortion to Tolerate Cell-to-Cell Interference in MLC nand Flash Memory

With the appealing storage-density advantage, multilevel-per-cell (MLC) NAND Flash memory that stores more than 1 bit in each memory cell now largely dominates the global Flash memory market. However, due to the inherent smaller noise margin, the MLC NAND Flash memory is more subject to various devi...

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Veröffentlicht in:	IEEE transactions on circuits and systems. I, Regular papers Regular papers, 2010-10, Vol.57 (10), p.2718-2728
Hauptverfasser:	Dong, Guiqiang, Li, Shu, Zhang, Tong
Format:	Artikel
Sprache:	eng
Schlagworte:	Cell-to-cell interference Circuit noise Circuits CMOS technology Data processing Degradation Design engineering Error correction codes Flash memory Flash memory (computers) Interference Mathematical analysis Memory nand flash memory Noise Nonvolatile memory postcompensation Predistortion Pushing Semiconductor device noise Semiconductors Stores Studies Threshold voltage
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