Using Data Postcompensation and Predistortion to Tolerate Cell-to-Cell Interference in MLC nand Flash Memory
With the appealing storage-density advantage, multilevel-per-cell (MLC) NAND Flash memory that stores more than 1 bit in each memory cell now largely dominates the global Flash memory market. However, due to the inherent smaller noise margin, the MLC NAND Flash memory is more subject to various devi...
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Veröffentlicht in: | IEEE transactions on circuits and systems. I, Regular papers Regular papers, 2010-10, Vol.57 (10), p.2718-2728 |
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description | With the appealing storage-density advantage, multilevel-per-cell (MLC) NAND Flash memory that stores more than 1 bit in each memory cell now largely dominates the global Flash memory market. However, due to the inherent smaller noise margin, the MLC NAND Flash memory is more subject to various device/circuit variability and noise, particularly as the industry is pushing the limit of technology scaling and a more aggressive use of MLC storage. Cell-to-cell interference has been well recognized as a major noise source responsible for raw-memory-storage reliability degradation. Leveraging the fact that cell-to-cell interference is a deterministic data-dependent process and can be mathematically described with a simple formula, we present two simple yet effective data-processing techniques that can well tolerate significant cell-to-cell interference at the system level. These two techniques essentially originate from two signal-processing techniques being widely used in digital communication systems to compensate communication-channel intersymbol interference. The effectiveness of these two techniques have been well demonstrated through computer simulations and analysis under an information theoretical framework, and the involved design tradeoffs are discussed in detail. |
doi_str_mv | 10.1109/TCSI.2010.2046966 |
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However, due to the inherent smaller noise margin, the MLC NAND Flash memory is more subject to various device/circuit variability and noise, particularly as the industry is pushing the limit of technology scaling and a more aggressive use of MLC storage. Cell-to-cell interference has been well recognized as a major noise source responsible for raw-memory-storage reliability degradation. Leveraging the fact that cell-to-cell interference is a deterministic data-dependent process and can be mathematically described with a simple formula, we present two simple yet effective data-processing techniques that can well tolerate significant cell-to-cell interference at the system level. These two techniques essentially originate from two signal-processing techniques being widely used in digital communication systems to compensate communication-channel intersymbol interference. 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(IEEE) Oct 2010</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c391t-a2490e7da86dcb59e4747f4c04cf3234c45660918598bf4040473164a108f1ee3</citedby><cites>FETCH-LOGICAL-c391t-a2490e7da86dcb59e4747f4c04cf3234c45660918598bf4040473164a108f1ee3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/5460923$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/5460923$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Dong, Guiqiang</creatorcontrib><creatorcontrib>Li, Shu</creatorcontrib><creatorcontrib>Zhang, Tong</creatorcontrib><title>Using Data Postcompensation and Predistortion to Tolerate Cell-to-Cell Interference in MLC nand Flash Memory</title><title>IEEE transactions on circuits and systems. I, Regular papers</title><addtitle>TCSI</addtitle><description>With the appealing storage-density advantage, multilevel-per-cell (MLC) NAND Flash memory that stores more than 1 bit in each memory cell now largely dominates the global Flash memory market. However, due to the inherent smaller noise margin, the MLC NAND Flash memory is more subject to various device/circuit variability and noise, particularly as the industry is pushing the limit of technology scaling and a more aggressive use of MLC storage. Cell-to-cell interference has been well recognized as a major noise source responsible for raw-memory-storage reliability degradation. Leveraging the fact that cell-to-cell interference is a deterministic data-dependent process and can be mathematically described with a simple formula, we present two simple yet effective data-processing techniques that can well tolerate significant cell-to-cell interference at the system level. These two techniques essentially originate from two signal-processing techniques being widely used in digital communication systems to compensate communication-channel intersymbol interference. The effectiveness of these two techniques have been well demonstrated through computer simulations and analysis under an information theoretical framework, and the involved design tradeoffs are discussed in detail.</description><subject>Cell-to-cell interference</subject><subject>Circuit noise</subject><subject>Circuits</subject><subject>CMOS technology</subject><subject>Data processing</subject><subject>Degradation</subject><subject>Design engineering</subject><subject>Error correction codes</subject><subject>Flash memory</subject><subject>Flash memory (computers)</subject><subject>Interference</subject><subject>Mathematical analysis</subject><subject>Memory</subject><subject>nand flash memory</subject><subject>Noise</subject><subject>Nonvolatile memory</subject><subject>postcompensation</subject><subject>Predistortion</subject><subject>Pushing</subject><subject>Semiconductor device noise</subject><subject>Semiconductors</subject><subject>Stores</subject><subject>Studies</subject><subject>Threshold voltage</subject><issn>1549-8328</issn><issn>1558-0806</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNpdkEFPwyAYhonRxDn9AcYLiQdPnVAohaOpTpdscYnbuWHsq3bpYAI77N9L3eLBcPiAPO-XNw9Ct5SMKCXqcVF9TEY5Sc-ccKGEOEMDWhQyI5KI8_7OVSZZLi_RVQgbQnJFGB2gbhla-4mfddR47kI0brsDG3RsncXarvHcw7oN0fnfn-jwwnXgdQRcQddl0WX9xBMbwTfgwRrArcWzaYVtnx93OnzhGWydP1yji0Z3AW5Oc4iW45dF9ZZN318n1dM0M0zRmOmcKwLlWkuxNqtCAS952XBDuGlYzrjhhRBEUVkouWo4SadkVHBNiWwoABuih-PenXffewix3rbBpJragtuHWhZFUsSETOT9P3Lj9t6mcjUljNBclAkcInqkjHcheGjqnW-32h8SVPf6615_3euvT_pT5u6YaQHgjy94Kp4z9gPDc3_K</recordid><startdate>20101001</startdate><enddate>20101001</enddate><creator>Dong, Guiqiang</creator><creator>Li, Shu</creator><creator>Zhang, Tong</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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I, Regular papers</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Dong, Guiqiang</au><au>Li, Shu</au><au>Zhang, Tong</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Using Data Postcompensation and Predistortion to Tolerate Cell-to-Cell Interference in MLC nand Flash Memory</atitle><jtitle>IEEE transactions on circuits and systems. I, Regular papers</jtitle><stitle>TCSI</stitle><date>2010-10-01</date><risdate>2010</risdate><volume>57</volume><issue>10</issue><spage>2718</spage><epage>2728</epage><pages>2718-2728</pages><issn>1549-8328</issn><eissn>1558-0806</eissn><coden>ITCSCH</coden><abstract>With the appealing storage-density advantage, multilevel-per-cell (MLC) NAND Flash memory that stores more than 1 bit in each memory cell now largely dominates the global Flash memory market. 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subjects | Cell-to-cell interference Circuit noise Circuits CMOS technology Data processing Degradation Design engineering Error correction codes Flash memory Flash memory (computers) Interference Mathematical analysis Memory nand flash memory Noise Nonvolatile memory postcompensation Predistortion Pushing Semiconductor device noise Semiconductors Stores Studies Threshold voltage |
title | Using Data Postcompensation and Predistortion to Tolerate Cell-to-Cell Interference in MLC nand Flash Memory |
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