Indirect Programming of Floating-Gate Transistors
Floating-gate (FG) transistors are useful for precisely programming a large array of current sources. Present FG programming techniques require disconnection of the transistor from the rest of its circuit while it is being programmed. We present a new method of programming FG transistors that does n...
Gespeichert in:
Veröffentlicht in: | IEEE transactions on circuits and systems. 1, Fundamental theory and applications Fundamental theory and applications, 2007-05, Vol.54 (5), p.951-963 |
---|---|
Hauptverfasser: | , , , , |
Format: | Artikel |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
container_end_page | 963 |
---|---|
container_issue | 5 |
container_start_page | 951 |
container_title | IEEE transactions on circuits and systems. 1, Fundamental theory and applications |
container_volume | 54 |
creator | Graham, D.W. Farquhar, E. Degnan, B. Gordon, C. Hasler, P. |
description | Floating-gate (FG) transistors are useful for precisely programming a large array of current sources. Present FG programming techniques require disconnection of the transistor from the rest of its circuit while it is being programmed. We present a new method of programming FG transistors that does not require this disconnection. In this indirect programming method, two transistors share a FG allowing one to exist directly in a circuit while the other is reserved for programming. Since the transistor does not need to be disconnected from the circuit to program it, the switch count is reduced, resulting in fewer parasitics and better overall performance. Additionally, the use of these indirectly programmed FG transistors allows a circuit to be tuned such that the effects of device mismatch are negated. Finally, the concept of run-time programming is introduced which allows a circuit to be recalibrated while it is still operating within its system |
doi_str_mv | 10.1109/TCSI.2007.895521 |
format | Article |
fullrecord | <record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_crossref_primary_10_1109_TCSI_2007_895521</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>4195632</ieee_id><sourcerecordid>34494926</sourcerecordid><originalsourceid>FETCH-LOGICAL-c354t-6367a4a4126f5140c0f544bea412d454da976fb75972f45a8d4ced536034058b3</originalsourceid><addsrcrecordid>eNp9kMFLwzAUh4MoOKd3wUvxIF4685KXNDnK2OZgoOA8h6xNR0fbzKQ7-N_bUvHgwdP78fh-D95HyC3QGQDVT9v5-3rGKM1mSgvB4IxMQAiVUkXl-ZBRp4ozdUmuYjxQyjTlMCGwbosquLxL3oLfB9s0VbtPfJksa2-7Pqcr27lkG2wbq9j5EK_JRWnr6G5-5pR8LBfb-Uu6eV2t58-bNOcCu1RymVm0CEyWApDmtBSIOzdsChRYWJ3JcpcJnbEShVUF5q4QXFKOVKgdn5KH8e4x-M-Ti51pqpi7urat86doOKJGzWQPPv4LgsyAMyEk9Oj9H_TgT6Ht3zBKolagQfcQHaE8-BiDK80xVI0NXwaoGVybwbUZXJvRdV-5GyuVc-4XR9BCcsa_ATv8d9Y</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>864981919</pqid></control><display><type>article</type><title>Indirect Programming of Floating-Gate Transistors</title><source>IEEE Electronic Library (IEL)</source><creator>Graham, D.W. ; Farquhar, E. ; Degnan, B. ; Gordon, C. ; Hasler, P.</creator><creatorcontrib>Graham, D.W. ; Farquhar, E. ; Degnan, B. ; Gordon, C. ; Hasler, P.</creatorcontrib><description>Floating-gate (FG) transistors are useful for precisely programming a large array of current sources. Present FG programming techniques require disconnection of the transistor from the rest of its circuit while it is being programmed. We present a new method of programming FG transistors that does not require this disconnection. In this indirect programming method, two transistors share a FG allowing one to exist directly in a circuit while the other is reserved for programming. Since the transistor does not need to be disconnected from the circuit to program it, the switch count is reduced, resulting in fewer parasitics and better overall performance. Additionally, the use of these indirectly programmed FG transistors allows a circuit to be tuned such that the effects of device mismatch are negated. Finally, the concept of run-time programming is introduced which allows a circuit to be recalibrated while it is still operating within its system</description><identifier>ISSN: 1549-8328</identifier><identifier>ISSN: 1057-7122</identifier><identifier>EISSN: 1558-0806</identifier><identifier>DOI: 10.1109/TCSI.2007.895521</identifier><identifier>CODEN: ITCSCH</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Analog programmability ; Arrays ; Circuits ; Counting ; Disengaging ; electron tunneling ; FG programming ; FG transistor ; floating-gate (FG) nFET ; hot-electron injection ; indirect programming ; MOSFETs ; Multiplexing ; Phased arrays ; Programming ; Runtime ; Secondary generated hot electron injection ; Semiconductor devices ; Switches ; Switching circuits ; Transistors ; Tuned circuits ; Tunneling ; Voltage</subject><ispartof>IEEE transactions on circuits and systems. 1, Fundamental theory and applications, 2007-05, Vol.54 (5), p.951-963</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2007</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c354t-6367a4a4126f5140c0f544bea412d454da976fb75972f45a8d4ced536034058b3</citedby><cites>FETCH-LOGICAL-c354t-6367a4a4126f5140c0f544bea412d454da976fb75972f45a8d4ced536034058b3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/4195632$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,777,781,793,27905,27906,54739</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/4195632$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Graham, D.W.</creatorcontrib><creatorcontrib>Farquhar, E.</creatorcontrib><creatorcontrib>Degnan, B.</creatorcontrib><creatorcontrib>Gordon, C.</creatorcontrib><creatorcontrib>Hasler, P.</creatorcontrib><title>Indirect Programming of Floating-Gate Transistors</title><title>IEEE transactions on circuits and systems. 1, Fundamental theory and applications</title><addtitle>TCSI</addtitle><description>Floating-gate (FG) transistors are useful for precisely programming a large array of current sources. Present FG programming techniques require disconnection of the transistor from the rest of its circuit while it is being programmed. We present a new method of programming FG transistors that does not require this disconnection. In this indirect programming method, two transistors share a FG allowing one to exist directly in a circuit while the other is reserved for programming. Since the transistor does not need to be disconnected from the circuit to program it, the switch count is reduced, resulting in fewer parasitics and better overall performance. Additionally, the use of these indirectly programmed FG transistors allows a circuit to be tuned such that the effects of device mismatch are negated. Finally, the concept of run-time programming is introduced which allows a circuit to be recalibrated while it is still operating within its system</description><subject>Analog programmability</subject><subject>Arrays</subject><subject>Circuits</subject><subject>Counting</subject><subject>Disengaging</subject><subject>electron tunneling</subject><subject>FG programming</subject><subject>FG transistor</subject><subject>floating-gate (FG) nFET</subject><subject>hot-electron injection</subject><subject>indirect programming</subject><subject>MOSFETs</subject><subject>Multiplexing</subject><subject>Phased arrays</subject><subject>Programming</subject><subject>Runtime</subject><subject>Secondary generated hot electron injection</subject><subject>Semiconductor devices</subject><subject>Switches</subject><subject>Switching circuits</subject><subject>Transistors</subject><subject>Tuned circuits</subject><subject>Tunneling</subject><subject>Voltage</subject><issn>1549-8328</issn><issn>1057-7122</issn><issn>1558-0806</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2007</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNp9kMFLwzAUh4MoOKd3wUvxIF4685KXNDnK2OZgoOA8h6xNR0fbzKQ7-N_bUvHgwdP78fh-D95HyC3QGQDVT9v5-3rGKM1mSgvB4IxMQAiVUkXl-ZBRp4ozdUmuYjxQyjTlMCGwbosquLxL3oLfB9s0VbtPfJksa2-7Pqcr27lkG2wbq9j5EK_JRWnr6G5-5pR8LBfb-Uu6eV2t58-bNOcCu1RymVm0CEyWApDmtBSIOzdsChRYWJ3JcpcJnbEShVUF5q4QXFKOVKgdn5KH8e4x-M-Ti51pqpi7urat86doOKJGzWQPPv4LgsyAMyEk9Oj9H_TgT6Ht3zBKolagQfcQHaE8-BiDK80xVI0NXwaoGVybwbUZXJvRdV-5GyuVc-4XR9BCcsa_ATv8d9Y</recordid><startdate>20070501</startdate><enddate>20070501</enddate><creator>Graham, D.W.</creator><creator>Farquhar, E.</creator><creator>Degnan, B.</creator><creator>Gordon, C.</creator><creator>Hasler, P.</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>F28</scope><scope>FR3</scope></search><sort><creationdate>20070501</creationdate><title>Indirect Programming of Floating-Gate Transistors</title><author>Graham, D.W. ; Farquhar, E. ; Degnan, B. ; Gordon, C. ; Hasler, P.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c354t-6367a4a4126f5140c0f544bea412d454da976fb75972f45a8d4ced536034058b3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2007</creationdate><topic>Analog programmability</topic><topic>Arrays</topic><topic>Circuits</topic><topic>Counting</topic><topic>Disengaging</topic><topic>electron tunneling</topic><topic>FG programming</topic><topic>FG transistor</topic><topic>floating-gate (FG) nFET</topic><topic>hot-electron injection</topic><topic>indirect programming</topic><topic>MOSFETs</topic><topic>Multiplexing</topic><topic>Phased arrays</topic><topic>Programming</topic><topic>Runtime</topic><topic>Secondary generated hot electron injection</topic><topic>Semiconductor devices</topic><topic>Switches</topic><topic>Switching circuits</topic><topic>Transistors</topic><topic>Tuned circuits</topic><topic>Tunneling</topic><topic>Voltage</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Graham, D.W.</creatorcontrib><creatorcontrib>Farquhar, E.</creatorcontrib><creatorcontrib>Degnan, B.</creatorcontrib><creatorcontrib>Gordon, C.</creatorcontrib><creatorcontrib>Hasler, P.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><jtitle>IEEE transactions on circuits and systems. 1, Fundamental theory and applications</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Graham, D.W.</au><au>Farquhar, E.</au><au>Degnan, B.</au><au>Gordon, C.</au><au>Hasler, P.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Indirect Programming of Floating-Gate Transistors</atitle><jtitle>IEEE transactions on circuits and systems. 1, Fundamental theory and applications</jtitle><stitle>TCSI</stitle><date>2007-05-01</date><risdate>2007</risdate><volume>54</volume><issue>5</issue><spage>951</spage><epage>963</epage><pages>951-963</pages><issn>1549-8328</issn><issn>1057-7122</issn><eissn>1558-0806</eissn><coden>ITCSCH</coden><abstract>Floating-gate (FG) transistors are useful for precisely programming a large array of current sources. Present FG programming techniques require disconnection of the transistor from the rest of its circuit while it is being programmed. We present a new method of programming FG transistors that does not require this disconnection. In this indirect programming method, two transistors share a FG allowing one to exist directly in a circuit while the other is reserved for programming. Since the transistor does not need to be disconnected from the circuit to program it, the switch count is reduced, resulting in fewer parasitics and better overall performance. Additionally, the use of these indirectly programmed FG transistors allows a circuit to be tuned such that the effects of device mismatch are negated. Finally, the concept of run-time programming is introduced which allows a circuit to be recalibrated while it is still operating within its system</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/TCSI.2007.895521</doi><tpages>13</tpages></addata></record> |
fulltext | fulltext_linktorsrc |
identifier | ISSN: 1549-8328 |
ispartof | IEEE transactions on circuits and systems. 1, Fundamental theory and applications, 2007-05, Vol.54 (5), p.951-963 |
issn | 1549-8328 1057-7122 1558-0806 |
language | eng |
recordid | cdi_crossref_primary_10_1109_TCSI_2007_895521 |
source | IEEE Electronic Library (IEL) |
subjects | Analog programmability Arrays Circuits Counting Disengaging electron tunneling FG programming FG transistor floating-gate (FG) nFET hot-electron injection indirect programming MOSFETs Multiplexing Phased arrays Programming Runtime Secondary generated hot electron injection Semiconductor devices Switches Switching circuits Transistors Tuned circuits Tunneling Voltage |
title | Indirect Programming of Floating-Gate Transistors |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-19T15%3A32%3A49IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Indirect%20Programming%20of%20Floating-Gate%20Transistors&rft.jtitle=IEEE%20transactions%20on%20circuits%20and%20systems.%201,%20Fundamental%20theory%20and%20applications&rft.au=Graham,%20D.W.&rft.date=2007-05-01&rft.volume=54&rft.issue=5&rft.spage=951&rft.epage=963&rft.pages=951-963&rft.issn=1549-8328&rft.eissn=1558-0806&rft.coden=ITCSCH&rft_id=info:doi/10.1109/TCSI.2007.895521&rft_dat=%3Cproquest_RIE%3E34494926%3C/proquest_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=864981919&rft_id=info:pmid/&rft_ieee_id=4195632&rfr_iscdi=true |