SI PUF: An SRAM and Inverter-Based PUF With a Bit Error Rate of 0.0053% and 0.073/0.042 pJ/bit
The physical unclonable function (PUF) can generate a unique identifier for each chip, ideal for key generation and chip anti-counterfeiting. The reliability of PUF is paramount, and therefore is one of the significant challenges for PUF design. This brief proposes a novel SRAM- and Inverter-based P...
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Veröffentlicht in: | IEEE transactions on circuits and systems. II, Express briefs Express briefs, 2024-04, Vol.71 (4), p.2339-2343 |
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creator | Ni, Li Wang, Pengjun Zhang, Yuejun Li, Xiangyu Li, Gang Ding, Lin Zhang, Jiliang |
description | The physical unclonable function (PUF) can generate a unique identifier for each chip, ideal for key generation and chip anti-counterfeiting. The reliability of PUF is paramount, and therefore is one of the significant challenges for PUF design. This brief proposes a novel SRAM- and Inverter-based PUF (SI PUF) that can operate as either an SRAM PUF or an inverter PUF, depending on the input configuration signal. A zero-overhead bit configuration strategy (BCS) is proposed to enhance the reliability of PUF. Moreover, the working voltage of the sub-threshold level and the well-designed discharge stage ensure that our SI PUF can operate with low power consumption. The tested results of chips fabricated in 40-nm CMOS show that our SI PUF has only 0.0053% of the worst bit error rate (BER) under working conditions of −50 to 125°C and 0.75 to 1.5V, with 0.073/0.042 pJ/bit of power consumption. The low BER and energy overhead illustrate that our SI PUF is more suitable for resource-limited devices compared to DAC 2022 and JSSC 2020. |
doi_str_mv | 10.1109/TCSII.2023.3339296 |
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The reliability of PUF is paramount, and therefore is one of the significant challenges for PUF design. This brief proposes a novel SRAM- and Inverter-based PUF (SI PUF) that can operate as either an SRAM PUF or an inverter PUF, depending on the input configuration signal. A zero-overhead bit configuration strategy (BCS) is proposed to enhance the reliability of PUF. Moreover, the working voltage of the sub-threshold level and the well-designed discharge stage ensure that our SI PUF can operate with low power consumption. The tested results of chips fabricated in 40-nm CMOS show that our SI PUF has only 0.0053% of the worst bit error rate (BER) under working conditions of −50 to 125°C and 0.75 to 1.5V, with 0.073/0.042 pJ/bit of power consumption. 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II, Express briefs</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Ni, Li</au><au>Wang, Pengjun</au><au>Zhang, Yuejun</au><au>Li, Xiangyu</au><au>Li, Gang</au><au>Ding, Lin</au><au>Zhang, Jiliang</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>SI PUF: An SRAM and Inverter-Based PUF With a Bit Error Rate of 0.0053% and 0.073/0.042 pJ/bit</atitle><jtitle>IEEE transactions on circuits and systems. II, Express briefs</jtitle><stitle>TCSII</stitle><date>2024-04-01</date><risdate>2024</risdate><volume>71</volume><issue>4</issue><spage>2339</spage><epage>2343</epage><pages>2339-2343</pages><issn>1549-7747</issn><eissn>1558-3791</eissn><coden>ITCSFK</coden><abstract>The physical unclonable function (PUF) can generate a unique identifier for each chip, ideal for key generation and chip anti-counterfeiting. 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subjects | Bit error rate Computer architecture Configurations hardware security Inverters key generation Microprocessors Physical unclonable function Power consumption Power demand Power management Random access memory Reliability reliable Static random access memory |
title | SI PUF: An SRAM and Inverter-Based PUF With a Bit Error Rate of 0.0053% and 0.073/0.042 pJ/bit |
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