A High-Efficiency E-band Power Amplifier with Optimized Output Matching Network in a 28-nm Bulk CMOS

This paper presents an E-band high-efficiency power amplifier (PA) implemented in a 28-nm bulk CMOS technology. The output matching network (OMN) is optimized for high power and high efficiency through a co-optimization technique where the optimum load admittance (Yopt) is derived by incorporating t...

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Veröffentlicht in:	IEEE transactions on circuits and systems. II, Express briefs Express briefs, 2024-03, Vol.71 (3), p.1-1
Hauptverfasser:	Park, Gunwoo, Park, Seungwon, Jeon, Sanggeun
Format:	Artikel
Sprache:	eng
Schlagworte:	Capacitors CMOS co-optimization E-band Efficiency high efficiency Impedance matching Matching Millimeter waves Optimization Optimization techniques Optimized production technology optimum output admittance output matching network power amplifier Power amplifiers Power generation power-added efficiency Shunt capacitors Transformers Transistors
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