Fully Integrated Digital GaN-Based LSK Demodulator for High-Temperature Applications
We present the first Gallium Nitride (GaN)-based demodulator system dedicated to demodulating Load-Shift Keying (LSK) modulated signals that can operate at high temperature (HT). GaN500 technology is adopted to implement the proposed demodulator. Stable DC output characteristics of epitaxial AlGaN/G...
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| Veröffentlicht in: | IEEE transactions on circuits and systems. II, Express briefs Express briefs, 2020-09, Vol.67 (9), p.1579-1583 |
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| container_title | IEEE transactions on circuits and systems. II, Express briefs |
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| creator | Hassan, Ahmad Amer, Mostafa Savaria, Yvon Sawan, Mohamad |
| description | We present the first Gallium Nitride (GaN)-based demodulator system dedicated to demodulating Load-Shift Keying (LSK) modulated signals that can operate at high temperature (HT). GaN500 technology is adopted to implement the proposed demodulator. Stable DC output characteristics of epitaxial AlGaN/GaN Heterojunction Field Effect Transistors (HFETs) operating at up to 500°C enable designing HT ICs. Conventional digital gates such as inverters, NAND2, NAND3, delay elements and a D Flip-Flop are employed to implement the proposed demodulator. The demodulation system is fabricated on a 2.67 mm 2 silicon carbide (SiC) substrate and experimentally validated at 160°C, whereas the building blocks (inverters and NANDs) show a stable operation at HT up to 400°C. A minimum of 1 V amplitude difference can be detected between the high voltage level (HVL = ±5 V) and low voltage level (LVL = ±4 V) of an applied LSK modulated signal to recover transmitted digital data. Two high-voltage supply levels (±14 V) are required to operate the system. Its total power consumption is 3.4 W. |
| doi_str_mv | 10.1109/TCSII.2020.3010094 |
| format | Article |
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GaN500 technology is adopted to implement the proposed demodulator. Stable DC output characteristics of epitaxial AlGaN/GaN Heterojunction Field Effect Transistors (HFETs) operating at up to 500°C enable designing HT ICs. Conventional digital gates such as inverters, NAND2, NAND3, delay elements and a D Flip-Flop are employed to implement the proposed demodulator. The demodulation system is fabricated on a 2.67 mm 2 silicon carbide (SiC) substrate and experimentally validated at 160°C, whereas the building blocks (inverters and NANDs) show a stable operation at HT up to 400°C. A minimum of 1 V amplitude difference can be detected between the high voltage level (HVL = ±5 V) and low voltage level (LVL = ±4 V) of an applied LSK modulated signal to recover transmitted digital data. Two high-voltage supply levels (±14 V) are required to operate the system. Its total power consumption is 3.4 W.</description><identifier>ISSN: 1549-7747</identifier><identifier>EISSN: 1558-3791</identifier><identifier>DOI: 10.1109/TCSII.2020.3010094</identifier><identifier>CODEN: ICSPE5</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Aluminum gallium nitrides ; Delays ; Demodulation ; Demodulators ; Digital data ; Field effect transistors ; Gallium nitride ; Gallium nitrides ; GaN demodulation system ; GaN high-temperature characterization ; GaN500 HFET ; HEMTs ; Heterojunctions ; High temperature ; High voltages ; high-temperature digital ICs ; High-temperature ICs ; Inverters ; Keying ; Logic gates ; Low voltage ; Power consumption ; Semiconductor devices ; Silicon carbide ; Silicon substrates ; Threshold voltage ; wireless sensor</subject><ispartof>IEEE transactions on circuits and systems. II, Express briefs, 2020-09, Vol.67 (9), p.1579-1583</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2020</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c295t-3a7d09dbe16a8506d2d59a8152c33c46bf1cba668314ac9261d85e04ac7c80723</citedby><cites>FETCH-LOGICAL-c295t-3a7d09dbe16a8506d2d59a8152c33c46bf1cba668314ac9261d85e04ac7c80723</cites><orcidid>0000-0002-2215-5375 ; 0000-0002-4137-7272 ; 0000-0002-3404-9959</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/9143203$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/9143203$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Hassan, Ahmad</creatorcontrib><creatorcontrib>Amer, Mostafa</creatorcontrib><creatorcontrib>Savaria, Yvon</creatorcontrib><creatorcontrib>Sawan, Mohamad</creatorcontrib><title>Fully Integrated Digital GaN-Based LSK Demodulator for High-Temperature Applications</title><title>IEEE transactions on circuits and systems. II, Express briefs</title><addtitle>TCSII</addtitle><description>We present the first Gallium Nitride (GaN)-based demodulator system dedicated to demodulating Load-Shift Keying (LSK) modulated signals that can operate at high temperature (HT). GaN500 technology is adopted to implement the proposed demodulator. Stable DC output characteristics of epitaxial AlGaN/GaN Heterojunction Field Effect Transistors (HFETs) operating at up to 500°C enable designing HT ICs. Conventional digital gates such as inverters, NAND2, NAND3, delay elements and a D Flip-Flop are employed to implement the proposed demodulator. The demodulation system is fabricated on a 2.67 mm 2 silicon carbide (SiC) substrate and experimentally validated at 160°C, whereas the building blocks (inverters and NANDs) show a stable operation at HT up to 400°C. A minimum of 1 V amplitude difference can be detected between the high voltage level (HVL = ±5 V) and low voltage level (LVL = ±4 V) of an applied LSK modulated signal to recover transmitted digital data. Two high-voltage supply levels (±14 V) are required to operate the system. Its total power consumption is 3.4 W.</description><subject>Aluminum gallium nitrides</subject><subject>Delays</subject><subject>Demodulation</subject><subject>Demodulators</subject><subject>Digital data</subject><subject>Field effect transistors</subject><subject>Gallium nitride</subject><subject>Gallium nitrides</subject><subject>GaN demodulation system</subject><subject>GaN high-temperature characterization</subject><subject>GaN500 HFET</subject><subject>HEMTs</subject><subject>Heterojunctions</subject><subject>High temperature</subject><subject>High voltages</subject><subject>high-temperature digital ICs</subject><subject>High-temperature ICs</subject><subject>Inverters</subject><subject>Keying</subject><subject>Logic gates</subject><subject>Low voltage</subject><subject>Power consumption</subject><subject>Semiconductor devices</subject><subject>Silicon carbide</subject><subject>Silicon substrates</subject><subject>Threshold voltage</subject><subject>wireless sensor</subject><issn>1549-7747</issn><issn>1558-3791</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2020</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kMFOwzAQRC0EEqXwA3CJxDlhbcexfSwtbSMqODScLddxSqq0CXZy6N_j0orDakermVnpIfSIIcEY5EsxXed5QoBAQgEDyPQKjTBjIqZc4uuTTmXMecpv0Z33OwAigZIRKuZD0xyj_NDbrdO9LaNZva173UQL_RG_ah8uq_V7NLP7thwa3bcuqsIs6-13XNh9Z0NqcDaadF1TG93X7cHfo5tKN94-XPYYfc3fiukyXn0u8ulkFRsiWR9TzUuQ5cbiTAsGWUlKJrXAjBhKTZptKmw2OssExak2kmS4FMxC0NwI4ISO0fO5t3Ptz2B9r3bt4A7hpSIpFTxjkkBwkbPLuNZ7ZyvVuXqv3VFhUCd66o-eOtFTF3oh9HQO1dba_4DEKQ2N9BcJC2p_</recordid><startdate>20200901</startdate><enddate>20200901</enddate><creator>Hassan, Ahmad</creator><creator>Amer, Mostafa</creator><creator>Savaria, Yvon</creator><creator>Sawan, Mohamad</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0002-2215-5375</orcidid><orcidid>https://orcid.org/0000-0002-4137-7272</orcidid><orcidid>https://orcid.org/0000-0002-3404-9959</orcidid></search><sort><creationdate>20200901</creationdate><title>Fully Integrated Digital GaN-Based LSK Demodulator for High-Temperature Applications</title><author>Hassan, Ahmad ; Amer, Mostafa ; Savaria, Yvon ; Sawan, Mohamad</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c295t-3a7d09dbe16a8506d2d59a8152c33c46bf1cba668314ac9261d85e04ac7c80723</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2020</creationdate><topic>Aluminum gallium nitrides</topic><topic>Delays</topic><topic>Demodulation</topic><topic>Demodulators</topic><topic>Digital data</topic><topic>Field effect transistors</topic><topic>Gallium nitride</topic><topic>Gallium nitrides</topic><topic>GaN demodulation system</topic><topic>GaN high-temperature characterization</topic><topic>GaN500 HFET</topic><topic>HEMTs</topic><topic>Heterojunctions</topic><topic>High temperature</topic><topic>High voltages</topic><topic>high-temperature digital ICs</topic><topic>High-temperature ICs</topic><topic>Inverters</topic><topic>Keying</topic><topic>Logic gates</topic><topic>Low voltage</topic><topic>Power consumption</topic><topic>Semiconductor devices</topic><topic>Silicon carbide</topic><topic>Silicon substrates</topic><topic>Threshold voltage</topic><topic>wireless sensor</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Hassan, Ahmad</creatorcontrib><creatorcontrib>Amer, Mostafa</creatorcontrib><creatorcontrib>Savaria, Yvon</creatorcontrib><creatorcontrib>Sawan, Mohamad</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE transactions on circuits and systems. II, Express briefs</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Hassan, Ahmad</au><au>Amer, Mostafa</au><au>Savaria, Yvon</au><au>Sawan, Mohamad</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Fully Integrated Digital GaN-Based LSK Demodulator for High-Temperature Applications</atitle><jtitle>IEEE transactions on circuits and systems. II, Express briefs</jtitle><stitle>TCSII</stitle><date>2020-09-01</date><risdate>2020</risdate><volume>67</volume><issue>9</issue><spage>1579</spage><epage>1583</epage><pages>1579-1583</pages><issn>1549-7747</issn><eissn>1558-3791</eissn><coden>ICSPE5</coden><abstract>We present the first Gallium Nitride (GaN)-based demodulator system dedicated to demodulating Load-Shift Keying (LSK) modulated signals that can operate at high temperature (HT). GaN500 technology is adopted to implement the proposed demodulator. Stable DC output characteristics of epitaxial AlGaN/GaN Heterojunction Field Effect Transistors (HFETs) operating at up to 500°C enable designing HT ICs. Conventional digital gates such as inverters, NAND2, NAND3, delay elements and a D Flip-Flop are employed to implement the proposed demodulator. The demodulation system is fabricated on a 2.67 mm 2 silicon carbide (SiC) substrate and experimentally validated at 160°C, whereas the building blocks (inverters and NANDs) show a stable operation at HT up to 400°C. A minimum of 1 V amplitude difference can be detected between the high voltage level (HVL = ±5 V) and low voltage level (LVL = ±4 V) of an applied LSK modulated signal to recover transmitted digital data. Two high-voltage supply levels (±14 V) are required to operate the system. 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| subjects | Aluminum gallium nitrides Delays Demodulation Demodulators Digital data Field effect transistors Gallium nitride Gallium nitrides GaN demodulation system GaN high-temperature characterization GaN500 HFET HEMTs Heterojunctions High temperature High voltages high-temperature digital ICs High-temperature ICs Inverters Keying Logic gates Low voltage Power consumption Semiconductor devices Silicon carbide Silicon substrates Threshold voltage wireless sensor |
| title | Fully Integrated Digital GaN-Based LSK Demodulator for High-Temperature Applications |
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