High-Efficiency E-Band Power Amplifiers and Transmitter Using Gate Capacitance Linearization in a 65-nm CMOS Process

This brief presents a new design technique for high-efficiency CMOS millimeter-wave power amplifiers (PAs) and the implementations of a two-stage moderate-power PA, a three-stage high-power PA, and a transmitter all working over 68-78 GHz. The proposed PAs adopt nMOS capacitors connected at the gate...

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Veröffentlicht in:	IEEE transactions on circuits and systems. II, Express briefs Express briefs, 2017-03, Vol.64 (3), p.234-238
Hauptverfasser:	Tianzuo Xi, Huang, Sherry, Shita Guo, Ping Gui, Daquan Huang, Chakraborty, Sudipto
Format:	Artikel
Sprache:	eng
Schlagworte:	Capacitance Capacitance linearization E-band high efficiency Impedance matching Logic gates millimeter wave (mmWave) Mixers MOS devices nMOS capacitors power amplifier (PA) power-added efficiency (PAE) Transistors Transmitters
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