Study of p-(6H, 4H, 3C)SiC/n-GaN Heterojunction SDR, DDR IMPATT Diodes

In this article, three polytypes of p-(6H, 4H, 3C)SiC and n-GaN heterojunction single-drift (SDR) and double-drift (DDR) impact-ionization-avalanche-transit-time (IMPATT) diodes are studied. We conduct the numerical simulations of the direct current (DC), radio frequency (RF), and noise characterist...

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Veröffentlicht in:	IEEE transactions on computer-aided design of integrated circuits and systems 2024-12, Vol.43 (12), p.4767-4774
Hauptverfasser:	Dai, Yang, Li, Yukun, Gao, Leiyu, Zuo, Jing, Chen, Cheng, Wang, Zhongxu, Zhao, Wu
Format:	Artikel
Sprache:	eng
Schlagworte:	Avalanche diodes Direct current Double-drift (DDR) Electric breakdown Gallium nitride Gallium nitrides Heterojunctions impact-ionization-avalanche-transit-time (IMPATT) diode noise Oscillators Polytypes Radio frequency radio frequency (RF) performance Semiconductor diodes SiC Silicon carbide Software radio
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