Achievable-Rate-Aware Retention-Error Correction for Multi-Level-Cell NAND Flash Memory

Owing to the effect of data retention noise in multi-level-cell NAND flash memory, the initial threshold-voltage distributions and read voltages can no longer be used to accurately calculate log-likelihood ratios (LLRs) as the retention time increases, thus causing retention errors. To solve this pr...

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Veröffentlicht in:	IEEE transactions on computer-aided design of integrated circuits and systems 2022-10, Vol.41 (10), p.3438-3451
Hauptverfasser:	Bu, Yingcheng, Fang, Yi, Zhang, Guohua, Cheng, Jun
Format:	Artikel
Sprache:	eng
Schlagworte:	Achievable rate Algorithms Ash Computational geometry Convexity data retention noise Decoding Electric potential Error correction Error correction & detection Estimation Flash memory (computers) Likelihood ratio log-likelihood-ratio (LLR) accuracy Lookup tables Mathematical analysis Maximization Memory management multi-level-cell flash memory Optimization Programming Retention Threshold voltage Transmitters Voltage
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