Enhancement of 2G HTS Coil Stability With V2O3 and Perforated HTS Wire
In this paper, we propose an improved wire structure that easily causes current bypass when the vanadium (III) oxide (V 2 O 3 ) material is applied turn-to-turn in 2G HTS no-insulation coils. A characteristic of the V 2 O 3 material is that when a quench causes the coil temperature to rise the turn-...
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| Veröffentlicht in: | IEEE transactions on applied superconductivity 2018-04, Vol.28 (3), p.1-5 |
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| container_title | IEEE transactions on applied superconductivity |
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| creator | Kim, Hyung-Wook Jo, Young-Sik Kim, Seog-Whan Ha, Dong-Woo Ko, Rock-Kil Kim, Doohun Hur, Jin |
| description | In this paper, we propose an improved wire structure that easily causes current bypass when the vanadium (III) oxide (V 2 O 3 ) material is applied turn-to-turn in 2G HTS no-insulation coils. A characteristic of the V 2 O 3 material is that when a quench causes the coil temperature to rise the turn-to-turn resistance is lowered and current is bypassed. However, due to the high material resistance of the original 2G HTS wire, the turn-to-turn resistance is large and the resulting amount of bypassed current is small. Therefore, in order to reduce the turn-to-turn resistance of the original 2G HTS coil, a short sample test of the perforated wire was performed. We also applied the proposed method to the coil and verified its validity through experimental results. |
| doi_str_mv | 10.1109/TASC.2017.2778086 |
| format | Article |
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A characteristic of the V 2 O 3 material is that when a quench causes the coil temperature to rise the turn-to-turn resistance is lowered and current is bypassed. However, due to the high material resistance of the original 2G HTS wire, the turn-to-turn resistance is large and the resulting amount of bypassed current is small. Therefore, in order to reduce the turn-to-turn resistance of the original 2G HTS coil, a short sample test of the perforated wire was performed. We also applied the proposed method to the coil and verified its validity through experimental results.</description><identifier>ISSN: 1051-8223</identifier><identifier>EISSN: 1558-2515</identifier><identifier>DOI: 10.1109/TASC.2017.2778086</identifier><identifier>CODEN: ITASE9</identifier><language>eng</language><publisher>IEEE</publisher><subject>2G HTS ; Copper ; High-temperature superconductors ; Insulation ; Magnetic flux ; metal-insulator transition ; perforated HTS wire ; Resistance ; smart insulation ; stability ; Superconducting coils ; V2O3 ; Wires</subject><ispartof>IEEE transactions on applied superconductivity, 2018-04, Vol.28 (3), p.1-5</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c265t-89e0b551b3d88151a8d3d42b281ba86a48b4d545922e59e6aa678e6f117f990a3</citedby><cites>FETCH-LOGICAL-c265t-89e0b551b3d88151a8d3d42b281ba86a48b4d545922e59e6aa678e6f117f990a3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/8122037$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/8122037$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Kim, Hyung-Wook</creatorcontrib><creatorcontrib>Jo, Young-Sik</creatorcontrib><creatorcontrib>Kim, Seog-Whan</creatorcontrib><creatorcontrib>Ha, Dong-Woo</creatorcontrib><creatorcontrib>Ko, Rock-Kil</creatorcontrib><creatorcontrib>Kim, Doohun</creatorcontrib><creatorcontrib>Hur, Jin</creatorcontrib><title>Enhancement of 2G HTS Coil Stability With V2O3 and Perforated HTS Wire</title><title>IEEE transactions on applied superconductivity</title><addtitle>TASC</addtitle><description>In this paper, we propose an improved wire structure that easily causes current bypass when the vanadium (III) oxide (V 2 O 3 ) material is applied turn-to-turn in 2G HTS no-insulation coils. A characteristic of the V 2 O 3 material is that when a quench causes the coil temperature to rise the turn-to-turn resistance is lowered and current is bypassed. However, due to the high material resistance of the original 2G HTS wire, the turn-to-turn resistance is large and the resulting amount of bypassed current is small. Therefore, in order to reduce the turn-to-turn resistance of the original 2G HTS coil, a short sample test of the perforated wire was performed. We also applied the proposed method to the coil and verified its validity through experimental results.</description><subject>2G HTS</subject><subject>Copper</subject><subject>High-temperature superconductors</subject><subject>Insulation</subject><subject>Magnetic flux</subject><subject>metal-insulator transition</subject><subject>perforated HTS wire</subject><subject>Resistance</subject><subject>smart insulation</subject><subject>stability</subject><subject>Superconducting coils</subject><subject>V2O3</subject><subject>Wires</subject><issn>1051-8223</issn><issn>1558-2515</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2018</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kM1Kw0AUhQdRsFYfQNzMC6TOvZOb3CxL6I9QqNBql2HS3NCRNpFJNn17-4ercxbnO4tPqVcwIwCTva_Hq3yEBtIRpikbTu7UAIg4QgK6P3VDEDGifVRPXfdjDMQc00BNJ83ONVs5SNPrttY40_P1Suet3-tV70q_9_1Rb3y_09-4tNo1lf6UULfB9VJdthsf5Fk91G7fycsth-prOlnn82ixnH3k40W0xYT6iDMxJRGUtmIGAseVrWIskaF0nLiYy7iimDJEoUwS55KUJakB0jrLjLNDBdffbWi7Lkhd_AZ_cOFYgCnOIoqziOIsoriJODFvV8aLyP-eAdHY1P4Bbv5W9w</recordid><startdate>201804</startdate><enddate>201804</enddate><creator>Kim, Hyung-Wook</creator><creator>Jo, Young-Sik</creator><creator>Kim, Seog-Whan</creator><creator>Ha, Dong-Woo</creator><creator>Ko, Rock-Kil</creator><creator>Kim, Doohun</creator><creator>Hur, Jin</creator><general>IEEE</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>201804</creationdate><title>Enhancement of 2G HTS Coil Stability With V2O3 and Perforated HTS Wire</title><author>Kim, Hyung-Wook ; Jo, Young-Sik ; Kim, Seog-Whan ; Ha, Dong-Woo ; Ko, Rock-Kil ; Kim, Doohun ; Hur, Jin</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c265t-89e0b551b3d88151a8d3d42b281ba86a48b4d545922e59e6aa678e6f117f990a3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2018</creationdate><topic>2G HTS</topic><topic>Copper</topic><topic>High-temperature superconductors</topic><topic>Insulation</topic><topic>Magnetic flux</topic><topic>metal-insulator transition</topic><topic>perforated HTS wire</topic><topic>Resistance</topic><topic>smart insulation</topic><topic>stability</topic><topic>Superconducting coils</topic><topic>V2O3</topic><topic>Wires</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kim, Hyung-Wook</creatorcontrib><creatorcontrib>Jo, Young-Sik</creatorcontrib><creatorcontrib>Kim, Seog-Whan</creatorcontrib><creatorcontrib>Ha, Dong-Woo</creatorcontrib><creatorcontrib>Ko, Rock-Kil</creatorcontrib><creatorcontrib>Kim, Doohun</creatorcontrib><creatorcontrib>Hur, Jin</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><jtitle>IEEE transactions on applied superconductivity</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Kim, Hyung-Wook</au><au>Jo, Young-Sik</au><au>Kim, Seog-Whan</au><au>Ha, Dong-Woo</au><au>Ko, Rock-Kil</au><au>Kim, Doohun</au><au>Hur, Jin</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Enhancement of 2G HTS Coil Stability With V2O3 and Perforated HTS Wire</atitle><jtitle>IEEE transactions on applied superconductivity</jtitle><stitle>TASC</stitle><date>2018-04</date><risdate>2018</risdate><volume>28</volume><issue>3</issue><spage>1</spage><epage>5</epage><pages>1-5</pages><issn>1051-8223</issn><eissn>1558-2515</eissn><coden>ITASE9</coden><abstract>In this paper, we propose an improved wire structure that easily causes current bypass when the vanadium (III) oxide (V 2 O 3 ) material is applied turn-to-turn in 2G HTS no-insulation coils. A characteristic of the V 2 O 3 material is that when a quench causes the coil temperature to rise the turn-to-turn resistance is lowered and current is bypassed. However, due to the high material resistance of the original 2G HTS wire, the turn-to-turn resistance is large and the resulting amount of bypassed current is small. Therefore, in order to reduce the turn-to-turn resistance of the original 2G HTS coil, a short sample test of the perforated wire was performed. We also applied the proposed method to the coil and verified its validity through experimental results.</abstract><pub>IEEE</pub><doi>10.1109/TASC.2017.2778086</doi><tpages>5</tpages></addata></record> |
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| subjects | 2G HTS Copper High-temperature superconductors Insulation Magnetic flux metal-insulator transition perforated HTS wire Resistance smart insulation stability Superconducting coils V2O3 Wires |
| title | Enhancement of 2G HTS Coil Stability With V2O3 and Perforated HTS Wire |
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