A new bidirectional solid-state switch for telephone loop plant applications

A new high-power bidirectional solid-state switch is described which uses a buried gate layer to pinch the electron hole plasma of a lateral p-i-n diode against the top oxide of a planar structure to produce bilateral blocking. Models of the switch have so far demonstrated blocking voltages up to 50...

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Bibliographische Detailangaben

Veröffentlicht in:	Proceedings of the IEEE 1981-01, Vol.69 (3), p.292-299
Hauptverfasser:	Shackle, P.W., Hartman, A.R., Murphy, B.T., Scott, R.S., Lieberman, R., Robinson, M.
Format:	Artikel
Sprache:	eng
Schlagworte:	Charge carrier processes Circuit testing Coupling circuits Optical coupling Optical switches Plasma applications Solid state circuits Switching circuits Telephony Voltage
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