Applications of scanning electron microscopy to thin film studies on semiconductor devices
Some of the various uses of the scanning electron microscope (SEM) as applied to thin film studies on semiconductor devices are illustrated. Examples presented include the use of the SEM to measure thickness variations in an aluminum film, to determine evaporation coverage of aluminum films over oxi...
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| Veröffentlicht in: | Proceedings of the IEEE 1971-10, Vol.59 (10), p.1429-1433 |
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| container_end_page | 1433 |
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| container_issue | 10 |
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| container_title | Proceedings of the IEEE |
| container_volume | 59 |
| creator | Gonzales, A.J. Philofsky, E.M. |
| description | Some of the various uses of the scanning electron microscope (SEM) as applied to thin film studies on semiconductor devices are illustrated. Examples presented include the use of the SEM to measure thickness variations in an aluminum film, to determine evaporation coverage of aluminum films over oxide steps, to locate θ phase (CuAl 2 ) particles in an Al-2% Cu thin film, to determine crystallographic orientation using Coates-Kikuchi patterns, to find an open circuit in a nichrome resistor, to follow the fuse blowout of an aluminum stripe, and to determine the chemical composition of thin films. In these examples, the secondary backscatter electron beam induced current (EBIC), voltage contrast, and X-ray modes are demonstrated as well as the rapid scan technique. |
| doi_str_mv | 10.1109/PROC.1971.8450 |
| format | Article |
| fullrecord | <record><control><sourceid>crossref_RIE</sourceid><recordid>TN_cdi_crossref_primary_10_1109_PROC_1971_8450</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>1450380</ieee_id><sourcerecordid>10_1109_PROC_1971_8450</sourcerecordid><originalsourceid>FETCH-LOGICAL-c172t-a83d4d444d41c899235dd3ea8fb24c03fcb47aea8a155d3c525057958266021e3</originalsourceid><addsrcrecordid>eNpFkE9LxDAQxYMouK5evXjJF2idJE2bHJfFf7CwInrxUrLJVCPdpDRZwW9vywoehmGY94Y3P0KuGZSMgb59ftmuS6YbVqpKwglZMClVwbmsT8kCgKlCc6bPyUVKXwAgZC0W5H01DL23JvsYEo0dTdaE4MMHxR5tHmOge2_HmGwcfmiONH_6QDvf72nKB-dxMgWacBLF4A42x5E6_PYW0yU560yf8OqvL8nb_d3r-rHYbB-e1qtNYVnDc2GUcJWrqqmYVVpzIZ0TaFS345UF0dld1ZhpNtM_TljJJchGS8XrGjhDsSTl8e4cM43YtcPo92b8aRm0M5l2JtPOZNqZzGS4ORo8Iv6L55UC8Qt4WmDd</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Applications of scanning electron microscopy to thin film studies on semiconductor devices</title><source>IEEE Electronic Library (IEL)</source><creator>Gonzales, A.J. ; Philofsky, E.M.</creator><creatorcontrib>Gonzales, A.J. ; Philofsky, E.M.</creatorcontrib><description>Some of the various uses of the scanning electron microscope (SEM) as applied to thin film studies on semiconductor devices are illustrated. Examples presented include the use of the SEM to measure thickness variations in an aluminum film, to determine evaporation coverage of aluminum films over oxide steps, to locate θ phase (CuAl 2 ) particles in an Al-2% Cu thin film, to determine crystallographic orientation using Coates-Kikuchi patterns, to find an open circuit in a nichrome resistor, to follow the fuse blowout of an aluminum stripe, and to determine the chemical composition of thin films. In these examples, the secondary backscatter electron beam induced current (EBIC), voltage contrast, and X-ray modes are demonstrated as well as the rapid scan technique.</description><identifier>ISSN: 0018-9219</identifier><identifier>EISSN: 1558-2256</identifier><identifier>DOI: 10.1109/PROC.1971.8450</identifier><identifier>CODEN: IEEPAD</identifier><language>eng</language><publisher>IEEE</publisher><subject>Aluminum ; Particle measurements ; Phase measurement ; Scanning electron microscopy ; Semiconductor devices ; Semiconductor films ; Semiconductor thin films ; Thickness measurement ; Thin film circuits ; Thin film devices</subject><ispartof>Proceedings of the IEEE, 1971-10, Vol.59 (10), p.1429-1433</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c172t-a83d4d444d41c899235dd3ea8fb24c03fcb47aea8a155d3c525057958266021e3</citedby></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1450380$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27903,27904,54737</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1450380$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Gonzales, A.J.</creatorcontrib><creatorcontrib>Philofsky, E.M.</creatorcontrib><title>Applications of scanning electron microscopy to thin film studies on semiconductor devices</title><title>Proceedings of the IEEE</title><addtitle>JPROC</addtitle><description>Some of the various uses of the scanning electron microscope (SEM) as applied to thin film studies on semiconductor devices are illustrated. Examples presented include the use of the SEM to measure thickness variations in an aluminum film, to determine evaporation coverage of aluminum films over oxide steps, to locate θ phase (CuAl 2 ) particles in an Al-2% Cu thin film, to determine crystallographic orientation using Coates-Kikuchi patterns, to find an open circuit in a nichrome resistor, to follow the fuse blowout of an aluminum stripe, and to determine the chemical composition of thin films. In these examples, the secondary backscatter electron beam induced current (EBIC), voltage contrast, and X-ray modes are demonstrated as well as the rapid scan technique.</description><subject>Aluminum</subject><subject>Particle measurements</subject><subject>Phase measurement</subject><subject>Scanning electron microscopy</subject><subject>Semiconductor devices</subject><subject>Semiconductor films</subject><subject>Semiconductor thin films</subject><subject>Thickness measurement</subject><subject>Thin film circuits</subject><subject>Thin film devices</subject><issn>0018-9219</issn><issn>1558-2256</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1971</creationdate><recordtype>article</recordtype><recordid>eNpFkE9LxDAQxYMouK5evXjJF2idJE2bHJfFf7CwInrxUrLJVCPdpDRZwW9vywoehmGY94Y3P0KuGZSMgb59ftmuS6YbVqpKwglZMClVwbmsT8kCgKlCc6bPyUVKXwAgZC0W5H01DL23JvsYEo0dTdaE4MMHxR5tHmOge2_HmGwcfmiONH_6QDvf72nKB-dxMgWacBLF4A42x5E6_PYW0yU560yf8OqvL8nb_d3r-rHYbB-e1qtNYVnDc2GUcJWrqqmYVVpzIZ0TaFS345UF0dld1ZhpNtM_TljJJchGS8XrGjhDsSTl8e4cM43YtcPo92b8aRm0M5l2JtPOZNqZzGS4ORo8Iv6L55UC8Qt4WmDd</recordid><startdate>197110</startdate><enddate>197110</enddate><creator>Gonzales, A.J.</creator><creator>Philofsky, E.M.</creator><general>IEEE</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>197110</creationdate><title>Applications of scanning electron microscopy to thin film studies on semiconductor devices</title><author>Gonzales, A.J. ; Philofsky, E.M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c172t-a83d4d444d41c899235dd3ea8fb24c03fcb47aea8a155d3c525057958266021e3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1971</creationdate><topic>Aluminum</topic><topic>Particle measurements</topic><topic>Phase measurement</topic><topic>Scanning electron microscopy</topic><topic>Semiconductor devices</topic><topic>Semiconductor films</topic><topic>Semiconductor thin films</topic><topic>Thickness measurement</topic><topic>Thin film circuits</topic><topic>Thin film devices</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Gonzales, A.J.</creatorcontrib><creatorcontrib>Philofsky, E.M.</creatorcontrib><collection>CrossRef</collection><jtitle>Proceedings of the IEEE</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Gonzales, A.J.</au><au>Philofsky, E.M.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Applications of scanning electron microscopy to thin film studies on semiconductor devices</atitle><jtitle>Proceedings of the IEEE</jtitle><stitle>JPROC</stitle><date>1971-10</date><risdate>1971</risdate><volume>59</volume><issue>10</issue><spage>1429</spage><epage>1433</epage><pages>1429-1433</pages><issn>0018-9219</issn><eissn>1558-2256</eissn><coden>IEEPAD</coden><abstract>Some of the various uses of the scanning electron microscope (SEM) as applied to thin film studies on semiconductor devices are illustrated. Examples presented include the use of the SEM to measure thickness variations in an aluminum film, to determine evaporation coverage of aluminum films over oxide steps, to locate θ phase (CuAl 2 ) particles in an Al-2% Cu thin film, to determine crystallographic orientation using Coates-Kikuchi patterns, to find an open circuit in a nichrome resistor, to follow the fuse blowout of an aluminum stripe, and to determine the chemical composition of thin films. In these examples, the secondary backscatter electron beam induced current (EBIC), voltage contrast, and X-ray modes are demonstrated as well as the rapid scan technique.</abstract><pub>IEEE</pub><doi>10.1109/PROC.1971.8450</doi><tpages>5</tpages></addata></record> |
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| ispartof | Proceedings of the IEEE, 1971-10, Vol.59 (10), p.1429-1433 |
| issn | 0018-9219 1558-2256 |
| language | eng |
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| source | IEEE Electronic Library (IEL) |
| subjects | Aluminum Particle measurements Phase measurement Scanning electron microscopy Semiconductor devices Semiconductor films Semiconductor thin films Thickness measurement Thin film circuits Thin film devices |
| title | Applications of scanning electron microscopy to thin film studies on semiconductor devices |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-22T22%3A07%3A20IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Applications%20of%20scanning%20electron%20microscopy%20to%20thin%20film%20studies%20on%20semiconductor%20devices&rft.jtitle=Proceedings%20of%20the%20IEEE&rft.au=Gonzales,%20A.J.&rft.date=1971-10&rft.volume=59&rft.issue=10&rft.spage=1429&rft.epage=1433&rft.pages=1429-1433&rft.issn=0018-9219&rft.eissn=1558-2256&rft.coden=IEEPAD&rft_id=info:doi/10.1109/PROC.1971.8450&rft_dat=%3Ccrossref_RIE%3E10_1109_PROC_1971_8450%3C/crossref_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=1450380&rfr_iscdi=true |