A negative resistance diode based upon double injection in thallium-doped silicon

A negative resistance diode based upon double injection in thallium-doped silicon

Limited success is reported in growing a thallium-doped silicon crystal, partially compensated with phosphorus. A diode constructed of this material gives a negative-differential resistance at the onset of double injection.

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Veröffentlicht in:Proceedings of the IEEE 1969-01, Vol.57 (9), p.1677-1677
Hauptverfasser: Henderson, H.T., Ashley, K.L.
Format: Artikel
Sprache:eng
Schlagworte:
Bandwidth
Electron traps
Equations
Impurities
Oscilloscopes
Semiconductor diodes
Silicon
Tail
Temperature
Thermal resistance
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container_end_page 1677
container_issue 9
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container_title Proceedings of the IEEE
container_volume 57
creator Henderson, H.T.
Ashley, K.L.
description Limited success is reported in growing a thallium-doped silicon crystal, partially compensated with phosphorus. A diode constructed of this material gives a negative-differential resistance at the onset of double injection.
doi_str_mv 10.1109/PROC.1969.7368
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source IEEE Electronic Library (IEL)
subjects Bandwidth
Electron traps
Equations
Impurities
Oscilloscopes
Semiconductor diodes
Silicon
Tail
Temperature
Thermal resistance
title A negative resistance diode based upon double injection in thallium-doped silicon
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