Integrated Schottky-diode clamp for transistor storage time control
Integration of a Schottky-diode antisaturation clamp with an n-p-n silicon transistor is described. The technique is compatible with beam-lead integrated circuit technology and offers an alternative to gold doping for storage time control.
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| Veröffentlicht in: | Proceedings of the IEEE 1968-01, Vol.56 (2), p.232-233 |
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| container_end_page | 233 |
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| container_issue | 2 |
| container_start_page | 232 |
| container_title | Proceedings of the IEEE |
| container_volume | 56 |
| creator | Chenette, E.R. Pedersen, R.A. Edwards, R. Kleimack, J.J. |
| description | Integration of a Schottky-diode antisaturation clamp with an n-p-n silicon transistor is described. The technique is compatible with beam-lead integrated circuit technology and offers an alternative to gold doping for storage time control. |
| doi_str_mv | 10.1109/PROC.1968.6252 |
| format | Article |
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The technique is compatible with beam-lead integrated circuit technology and offers an alternative to gold doping for storage time control.</description><subject>Asymptotic stability</subject><subject>Capacitance</subject><subject>Clamps</subject><subject>Damping</subject><subject>Differential equations</subject><subject>Lagrangian functions</subject><subject>Schottky barriers</subject><subject>Schottky diodes</subject><subject>Silicon</subject><subject>Voltage</subject><issn>0018-9219</issn><issn>1558-2256</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1968</creationdate><recordtype>article</recordtype><recordid>eNpFkD1PwzAYhC0EEqGwsrDkDyT4tf06zogiPipVKuJjjhzbKYEkrmwv_fc0KhLL3Q13NzyE3AItAWh9__q2bUqopSolQ3ZGMkBUBWMoz0lGKaiiZlBfkqsYvymlHCXPSLOek9sFnZzN382XT-nnUNjBW5ebUU_7vPchT0HPcYjpGBfRO5enYTo2_JyCH6_JRa_H6G7-fEU-nx4_mpdis31eNw-bwjCsUyG4RmRMKWkcguDAACrey8pwEGCsUEhtZwRKi0JqUwtegeq07nSFXWf5ipSnXxN8jMH17T4Mkw6HFmi7IGgXBO2CoF0QHAd3p8HgnPsvC6FAMf4LDXRX0Q</recordid><startdate>19680101</startdate><enddate>19680101</enddate><creator>Chenette, E.R.</creator><creator>Pedersen, R.A.</creator><creator>Edwards, R.</creator><creator>Kleimack, J.J.</creator><general>IEEE</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>19680101</creationdate><title>Integrated Schottky-diode clamp for transistor storage time control</title><author>Chenette, E.R. ; Pedersen, R.A. ; Edwards, R. ; Kleimack, J.J.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c259t-43a5522886ce5143121173f67c3141cd4850dbc456d546ac943718baaba75bbd3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1968</creationdate><topic>Asymptotic stability</topic><topic>Capacitance</topic><topic>Clamps</topic><topic>Damping</topic><topic>Differential equations</topic><topic>Lagrangian functions</topic><topic>Schottky barriers</topic><topic>Schottky diodes</topic><topic>Silicon</topic><topic>Voltage</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Chenette, E.R.</creatorcontrib><creatorcontrib>Pedersen, R.A.</creatorcontrib><creatorcontrib>Edwards, R.</creatorcontrib><creatorcontrib>Kleimack, J.J.</creatorcontrib><collection>CrossRef</collection><jtitle>Proceedings of the IEEE</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Chenette, E.R.</au><au>Pedersen, R.A.</au><au>Edwards, R.</au><au>Kleimack, J.J.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Integrated Schottky-diode clamp for transistor storage time control</atitle><jtitle>Proceedings of the IEEE</jtitle><stitle>JPROC</stitle><date>1968-01-01</date><risdate>1968</risdate><volume>56</volume><issue>2</issue><spage>232</spage><epage>233</epage><pages>232-233</pages><issn>0018-9219</issn><eissn>1558-2256</eissn><coden>IEEPAD</coden><abstract>Integration of a Schottky-diode antisaturation clamp with an n-p-n silicon transistor is described. The technique is compatible with beam-lead integrated circuit technology and offers an alternative to gold doping for storage time control.</abstract><pub>IEEE</pub><doi>10.1109/PROC.1968.6252</doi><tpages>2</tpages></addata></record> |
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| identifier | ISSN: 0018-9219 |
| ispartof | Proceedings of the IEEE, 1968-01, Vol.56 (2), p.232-233 |
| issn | 0018-9219 1558-2256 |
| language | eng |
| recordid | cdi_crossref_primary_10_1109_PROC_1968_6252 |
| source | IEEE Electronic Library (IEL) |
| subjects | Asymptotic stability Capacitance Clamps Damping Differential equations Lagrangian functions Schottky barriers Schottky diodes Silicon Voltage |
| title | Integrated Schottky-diode clamp for transistor storage time control |
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