Rectifying contacts under evaporated CdS
Previously, formation of blocking contacts to evaporated CdS with high work function metals has depended on the order of deposition. A method is described whereby blocking contact, rather than the usual ohmic contact, results for CdS deposited on metal. Comparison is favorable with the best diodes o...
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| Veröffentlicht in: | Proceedings of the IEEE 1968-01, Vol.56 (1), p.68-68 |
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| container_end_page | 68 |
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| container_issue | 1 |
| container_start_page | 68 |
| container_title | Proceedings of the IEEE |
| container_volume | 56 |
| creator | Scott-Monck, J.A. Learn, A.J. |
| description | Previously, formation of blocking contacts to evaporated CdS with high work function metals has depended on the order of deposition. A method is described whereby blocking contact, rather than the usual ohmic contact, results for CdS deposited on metal. Comparison is favorable with the best diodes obtained by first depositing CdS. |
| doi_str_mv | 10.1109/PROC.1968.6141 |
| format | Article |
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A method is described whereby blocking contact, rather than the usual ohmic contact, results for CdS deposited on metal. Comparison is favorable with the best diodes obtained by first depositing CdS.</description><identifier>ISSN: 0018-9219</identifier><identifier>EISSN: 1558-2256</identifier><identifier>DOI: 10.1109/PROC.1968.6141</identifier><identifier>CODEN: IEEPAD</identifier><language>eng</language><publisher>IEEE</publisher><subject>Cadmium ; Conductive films ; Crystallization ; Gold ; Heating ; Ohmic contacts ; Semiconductor diodes ; Semiconductor films ; Substrates ; Temperature</subject><ispartof>Proceedings of the IEEE, 1968-01, Vol.56 (1), p.68-68</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c259t-f95b9cd8dc62d6482b65c329763fd05b0a20c5f910ed9fe72cb797364f0974573</citedby></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1448071$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,4010,27900,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1448071$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Scott-Monck, J.A.</creatorcontrib><creatorcontrib>Learn, A.J.</creatorcontrib><title>Rectifying contacts under evaporated CdS</title><title>Proceedings of the IEEE</title><addtitle>JPROC</addtitle><description>Previously, formation of blocking contacts to evaporated CdS with high work function metals has depended on the order of deposition. A method is described whereby blocking contact, rather than the usual ohmic contact, results for CdS deposited on metal. Comparison is favorable with the best diodes obtained by first depositing CdS.</description><subject>Cadmium</subject><subject>Conductive films</subject><subject>Crystallization</subject><subject>Gold</subject><subject>Heating</subject><subject>Ohmic contacts</subject><subject>Semiconductor diodes</subject><subject>Semiconductor films</subject><subject>Substrates</subject><subject>Temperature</subject><issn>0018-9219</issn><issn>1558-2256</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1968</creationdate><recordtype>article</recordtype><recordid>eNpFzztLxEAUBeBBFIyrrY1NSpvEO--5pQRdhYWVVethMg-JaHaZicL-ew0rWJ3mnAMfIZcUWkoBb542666lqEyrqKBHpKJSmoYxqY5JBUBNg4ziKTkr5R0AuFS8Iteb6Kch7YfxrfbbcXJ-KvXXGGKu47fbbbObYqi78HxOTpL7KPHiLxfk9f7upXtoVuvlY3e7ajyTODUJZY8-mOAVC0oY1ivpOUOteAoge3AMvExIIQZMUTPfa9RciQSohdR8QdrDr8_bUnJMdpeHT5f3loKdnXZ22tlpZ-fv4OowGGKM_2UhDGjKfwBic02C</recordid><startdate>196801</startdate><enddate>196801</enddate><creator>Scott-Monck, J.A.</creator><creator>Learn, A.J.</creator><general>IEEE</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>196801</creationdate><title>Rectifying contacts under evaporated CdS</title><author>Scott-Monck, J.A. ; Learn, A.J.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c259t-f95b9cd8dc62d6482b65c329763fd05b0a20c5f910ed9fe72cb797364f0974573</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1968</creationdate><topic>Cadmium</topic><topic>Conductive films</topic><topic>Crystallization</topic><topic>Gold</topic><topic>Heating</topic><topic>Ohmic contacts</topic><topic>Semiconductor diodes</topic><topic>Semiconductor films</topic><topic>Substrates</topic><topic>Temperature</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Scott-Monck, J.A.</creatorcontrib><creatorcontrib>Learn, A.J.</creatorcontrib><collection>CrossRef</collection><jtitle>Proceedings of the IEEE</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Scott-Monck, J.A.</au><au>Learn, A.J.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Rectifying contacts under evaporated CdS</atitle><jtitle>Proceedings of the IEEE</jtitle><stitle>JPROC</stitle><date>1968-01</date><risdate>1968</risdate><volume>56</volume><issue>1</issue><spage>68</spage><epage>68</epage><pages>68-68</pages><issn>0018-9219</issn><eissn>1558-2256</eissn><coden>IEEPAD</coden><abstract>Previously, formation of blocking contacts to evaporated CdS with high work function metals has depended on the order of deposition. A method is described whereby blocking contact, rather than the usual ohmic contact, results for CdS deposited on metal. Comparison is favorable with the best diodes obtained by first depositing CdS.</abstract><pub>IEEE</pub><doi>10.1109/PROC.1968.6141</doi><tpages>1</tpages></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 0018-9219 |
| ispartof | Proceedings of the IEEE, 1968-01, Vol.56 (1), p.68-68 |
| issn | 0018-9219 1558-2256 |
| language | eng |
| recordid | cdi_crossref_primary_10_1109_PROC_1968_6141 |
| source | IEEE Electronic Library (IEL) |
| subjects | Cadmium Conductive films Crystallization Gold Heating Ohmic contacts Semiconductor diodes Semiconductor films Substrates Temperature |
| title | Rectifying contacts under evaporated CdS |
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