Monte Carlo Study of Si, Ge, and In0.53Ga0.47As n-Channel FinFET Scaling: Channel Orientation, Quantum Confinement, Doping, and Contacts

The effects of channel scaling in silicon (Si) and Si-alternative germanium (Ge) and In0.53Ga0.47As (InGaAs) n-channel devices toward the end of the CMOS roadmap are addressed theoretically. The devices are simulated using a quantum-corrected semiclassical Monte Carlo method. The results are discuss...

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Veröffentlicht in:	IEEE nanotechnology magazine 2020-12, Vol.14 (6), p.17-31
Hauptverfasser:	Bhatti, Aqyan A., Navlakha, Nupur, Crum, Dax M., Banerjee, Sanjay K., Register, Leonard F.
Format:	Magazinearticle
Sprache:	eng
Schlagworte:	CMOS Computational modeling Conductivity Doping FinFETs Germanium Indium gallium arsenide Logic gates Monte Carlo simulation Performance evaluation Quantum confinement Silicon Simulation
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