Improvement of the Performance of 885 nm Laser Diodes by Using the High Al Component Barrier Layers

Improvement of the Performance of 885 nm Laser Diodes by Using the High Al Component Barrier Layers

885 nm laser diode with high Al component AlGaAs barrier layers (HABLs) are designed and fabricated to mitigate carrier leakage. As the height of the potential barrier increases, the internal quantum efficiency increases. The slope efficiency increases from 1.15 W/A to 1.20 W/A, and the characterist...

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Veröffentlicht in:IEEE photonics technology letters 2024-12, Vol.36 (24), p.1429-1432
Hauptverfasser: Han, Renbo, Qi, Aiyi, Qu, Hongwei, Zhou, Xuyan, Zheng, Wanhua
Format: Artikel
Sprache:eng
Schlagworte:
Absorption
Diode lasers
Doping
Electrons
High slope efficiency
Information technology
laser diodes
Optical losses
Optical waveguides
Power lasers
Temperature
Threshold current
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Zusammenfassung:885 nm laser diode with high Al component AlGaAs barrier layers (HABLs) are designed and fabricated to mitigate carrier leakage. As the height of the potential barrier increases, the internal quantum efficiency increases. The slope efficiency increases from 1.15 W/A to 1.20 W/A, and the characteristic temperature for slope efficiency between 35.0~^{\circ } C and 55.0~^{\circ } C increases by 48 K. This letter describes a method for boosting both the slope efficiency and the characteristic temperature for slope efficiency.
ISSN:1041-1135
1941-0174
DOI:10.1109/LPT.2024.3483934