The Influence of Structure Parameter on GaN/AlN Periodically Stacked Structure Avalanche Photodiode

Recently, we have verified an inter-valley scattering free avalanche photodiode (APD) by using GaN/AlN periodically stacked structure (PSS). High linear-mode gain and extremely low excess noise have been achieved in a prototype GaN (10 nm)/ AlN (10 nm) PSS APD. In this letter, device optimization is...

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Veröffentlicht in:	IEEE photonics technology letters 2017-12, Vol.29 (24), p.2187-2190
Hauptverfasser:	Zheng, Jiyuan, Wang, Lai, Wu, Xingzhao, Hao, Zhibiao, Sun, Changzheng, Xiong, Bing, Luo, Yi, Han, Yanjun, Wang, Jian, Li, Hongtao, Li, Mo, Kang, Jianbin, Li, Qian
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum nitride Avalanche diodes Avalanche photodiodes dead-space multiplication theory Design optimization Gallium nitride Gallium nitrides III-V semiconductor materials impact ionization Ionization linear mode Noise reduction Periodic structures Scattering Thickness
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