Improvement of Epitaxy GaN Quality Using Liquid-Phase Deposited Nano-Patterned Sapphire Substrates

A relatively simple and easy and inexpensive liquid-phase deposition (LPD) method is employed to introduce nanoscale silica hemispheres on sapphire substrates for fabricating a nano-patterned sapphire substrate (NPSS). Compared with GaN grown on sapphire without any pattern, the NPSS-GaN film is of...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:IEEE photonics technology letters 2012-12, Vol.24 (24), p.2232-2234
Hauptverfasser: Hsieh, Cheng-Yu, Lin, Bo-Wen, Cho, Hsin-Ju, Wang, Bau-Ming, Chang, Nancy, Wu, Yew-Chung Sermon
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page 2234
container_issue 24
container_start_page 2232
container_title IEEE photonics technology letters
container_volume 24
creator Hsieh, Cheng-Yu
Lin, Bo-Wen
Cho, Hsin-Ju
Wang, Bau-Ming
Chang, Nancy
Wu, Yew-Chung Sermon
description A relatively simple and easy and inexpensive liquid-phase deposition (LPD) method is employed to introduce nanoscale silica hemispheres on sapphire substrates for fabricating a nano-patterned sapphire substrate (NPSS). Compared with GaN grown on sapphire without any pattern, the NPSS-GaN film is of much better quality as observed by scanning electron microscopy, transmission electron-microscopy, X-ray diffraction, cathodoluminescence, and photoluminescence. This is because GaN is initiated from the c-plane instead of the LPD-silica surface. In addition, many dislocations within the NPSS-GaN bend toward the patterns, or end at the GaN/void interfaces.
doi_str_mv 10.1109/LPT.2012.2224855
format Article
fullrecord <record><control><sourceid>crossref_RIE</sourceid><recordid>TN_cdi_crossref_primary_10_1109_LPT_2012_2224855</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>6330988</ieee_id><sourcerecordid>10_1109_LPT_2012_2224855</sourcerecordid><originalsourceid>FETCH-LOGICAL-c329t-6ebd2a5bd0b17de4a135a7b866b973cdf91786ef4efc76eb073fef25fe0895073</originalsourceid><addsrcrecordid>eNo9kF9PwjAUxRujiYi-m_jSLzDs33V7NIhIsiAGeF667VZqYJttMfDtLYH4dM9Jzjm5-SH0SMmIUpI_F4vViBHKRowxkUl5hQY0FzQhVInrqEnUlHJ5i-68_yaECsnFAFWzXe-6X9hBG3Bn8KS3QR-OeKrn-HOvtzYc8drb9gsX9mdvm2Sx0R7wK_SdtwEaPNdtlyx0CODaaJe67zfWAV7uKx-cDuDv0Y3RWw8PlztE67fJavyeFB_T2filSGrO8pCkUDVMy6ohFVUNCB2f1arK0rTKFa8bk1OVpWAEmFrFMFHcgGHSAMlyGd0QkfNu7TrvHZiyd3an3bGkpDwxKiOj8sSovDCKladzxQLAfzzlnORZxv8An69kjg</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Improvement of Epitaxy GaN Quality Using Liquid-Phase Deposited Nano-Patterned Sapphire Substrates</title><source>IEEE Electronic Library (IEL)</source><creator>Hsieh, Cheng-Yu ; Lin, Bo-Wen ; Cho, Hsin-Ju ; Wang, Bau-Ming ; Chang, Nancy ; Wu, Yew-Chung Sermon</creator><creatorcontrib>Hsieh, Cheng-Yu ; Lin, Bo-Wen ; Cho, Hsin-Ju ; Wang, Bau-Ming ; Chang, Nancy ; Wu, Yew-Chung Sermon</creatorcontrib><description>A relatively simple and easy and inexpensive liquid-phase deposition (LPD) method is employed to introduce nanoscale silica hemispheres on sapphire substrates for fabricating a nano-patterned sapphire substrate (NPSS). Compared with GaN grown on sapphire without any pattern, the NPSS-GaN film is of much better quality as observed by scanning electron microscopy, transmission electron-microscopy, X-ray diffraction, cathodoluminescence, and photoluminescence. This is because GaN is initiated from the c-plane instead of the LPD-silica surface. In addition, many dislocations within the NPSS-GaN bend toward the patterns, or end at the GaN/void interfaces.</description><identifier>ISSN: 1041-1135</identifier><identifier>EISSN: 1941-0174</identifier><identifier>DOI: 10.1109/LPT.2012.2224855</identifier><identifier>CODEN: IPTLEL</identifier><language>eng</language><publisher>IEEE</publisher><subject>Gallium nitride ; Light emitting diodes ; Light-emitting diode (LED) ; nano pattern ; Nanopatterning ; Nanoscale devices ; Quantum wells ; sapphire ; Substrates</subject><ispartof>IEEE photonics technology letters, 2012-12, Vol.24 (24), p.2232-2234</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c329t-6ebd2a5bd0b17de4a135a7b866b973cdf91786ef4efc76eb073fef25fe0895073</citedby><cites>FETCH-LOGICAL-c329t-6ebd2a5bd0b17de4a135a7b866b973cdf91786ef4efc76eb073fef25fe0895073</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/6330988$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/6330988$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Hsieh, Cheng-Yu</creatorcontrib><creatorcontrib>Lin, Bo-Wen</creatorcontrib><creatorcontrib>Cho, Hsin-Ju</creatorcontrib><creatorcontrib>Wang, Bau-Ming</creatorcontrib><creatorcontrib>Chang, Nancy</creatorcontrib><creatorcontrib>Wu, Yew-Chung Sermon</creatorcontrib><title>Improvement of Epitaxy GaN Quality Using Liquid-Phase Deposited Nano-Patterned Sapphire Substrates</title><title>IEEE photonics technology letters</title><addtitle>LPT</addtitle><description>A relatively simple and easy and inexpensive liquid-phase deposition (LPD) method is employed to introduce nanoscale silica hemispheres on sapphire substrates for fabricating a nano-patterned sapphire substrate (NPSS). Compared with GaN grown on sapphire without any pattern, the NPSS-GaN film is of much better quality as observed by scanning electron microscopy, transmission electron-microscopy, X-ray diffraction, cathodoluminescence, and photoluminescence. This is because GaN is initiated from the c-plane instead of the LPD-silica surface. In addition, many dislocations within the NPSS-GaN bend toward the patterns, or end at the GaN/void interfaces.</description><subject>Gallium nitride</subject><subject>Light emitting diodes</subject><subject>Light-emitting diode (LED)</subject><subject>nano pattern</subject><subject>Nanopatterning</subject><subject>Nanoscale devices</subject><subject>Quantum wells</subject><subject>sapphire</subject><subject>Substrates</subject><issn>1041-1135</issn><issn>1941-0174</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2012</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kF9PwjAUxRujiYi-m_jSLzDs33V7NIhIsiAGeF667VZqYJttMfDtLYH4dM9Jzjm5-SH0SMmIUpI_F4vViBHKRowxkUl5hQY0FzQhVInrqEnUlHJ5i-68_yaECsnFAFWzXe-6X9hBG3Bn8KS3QR-OeKrn-HOvtzYc8drb9gsX9mdvm2Sx0R7wK_SdtwEaPNdtlyx0CODaaJe67zfWAV7uKx-cDuDv0Y3RWw8PlztE67fJavyeFB_T2filSGrO8pCkUDVMy6ohFVUNCB2f1arK0rTKFa8bk1OVpWAEmFrFMFHcgGHSAMlyGd0QkfNu7TrvHZiyd3an3bGkpDwxKiOj8sSovDCKladzxQLAfzzlnORZxv8An69kjg</recordid><startdate>20121215</startdate><enddate>20121215</enddate><creator>Hsieh, Cheng-Yu</creator><creator>Lin, Bo-Wen</creator><creator>Cho, Hsin-Ju</creator><creator>Wang, Bau-Ming</creator><creator>Chang, Nancy</creator><creator>Wu, Yew-Chung Sermon</creator><general>IEEE</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20121215</creationdate><title>Improvement of Epitaxy GaN Quality Using Liquid-Phase Deposited Nano-Patterned Sapphire Substrates</title><author>Hsieh, Cheng-Yu ; Lin, Bo-Wen ; Cho, Hsin-Ju ; Wang, Bau-Ming ; Chang, Nancy ; Wu, Yew-Chung Sermon</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c329t-6ebd2a5bd0b17de4a135a7b866b973cdf91786ef4efc76eb073fef25fe0895073</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2012</creationdate><topic>Gallium nitride</topic><topic>Light emitting diodes</topic><topic>Light-emitting diode (LED)</topic><topic>nano pattern</topic><topic>Nanopatterning</topic><topic>Nanoscale devices</topic><topic>Quantum wells</topic><topic>sapphire</topic><topic>Substrates</topic><toplevel>online_resources</toplevel><creatorcontrib>Hsieh, Cheng-Yu</creatorcontrib><creatorcontrib>Lin, Bo-Wen</creatorcontrib><creatorcontrib>Cho, Hsin-Ju</creatorcontrib><creatorcontrib>Wang, Bau-Ming</creatorcontrib><creatorcontrib>Chang, Nancy</creatorcontrib><creatorcontrib>Wu, Yew-Chung Sermon</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><jtitle>IEEE photonics technology letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Hsieh, Cheng-Yu</au><au>Lin, Bo-Wen</au><au>Cho, Hsin-Ju</au><au>Wang, Bau-Ming</au><au>Chang, Nancy</au><au>Wu, Yew-Chung Sermon</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Improvement of Epitaxy GaN Quality Using Liquid-Phase Deposited Nano-Patterned Sapphire Substrates</atitle><jtitle>IEEE photonics technology letters</jtitle><stitle>LPT</stitle><date>2012-12-15</date><risdate>2012</risdate><volume>24</volume><issue>24</issue><spage>2232</spage><epage>2234</epage><pages>2232-2234</pages><issn>1041-1135</issn><eissn>1941-0174</eissn><coden>IPTLEL</coden><abstract>A relatively simple and easy and inexpensive liquid-phase deposition (LPD) method is employed to introduce nanoscale silica hemispheres on sapphire substrates for fabricating a nano-patterned sapphire substrate (NPSS). Compared with GaN grown on sapphire without any pattern, the NPSS-GaN film is of much better quality as observed by scanning electron microscopy, transmission electron-microscopy, X-ray diffraction, cathodoluminescence, and photoluminescence. This is because GaN is initiated from the c-plane instead of the LPD-silica surface. In addition, many dislocations within the NPSS-GaN bend toward the patterns, or end at the GaN/void interfaces.</abstract><pub>IEEE</pub><doi>10.1109/LPT.2012.2224855</doi><tpages>3</tpages></addata></record>
fulltext fulltext_linktorsrc
identifier ISSN: 1041-1135
ispartof IEEE photonics technology letters, 2012-12, Vol.24 (24), p.2232-2234
issn 1041-1135
1941-0174
language eng
recordid cdi_crossref_primary_10_1109_LPT_2012_2224855
source IEEE Electronic Library (IEL)
subjects Gallium nitride
Light emitting diodes
Light-emitting diode (LED)
nano pattern
Nanopatterning
Nanoscale devices
Quantum wells
sapphire
Substrates
title Improvement of Epitaxy GaN Quality Using Liquid-Phase Deposited Nano-Patterned Sapphire Substrates
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-12T17%3A54%3A48IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Improvement%20of%20Epitaxy%20GaN%20Quality%20Using%20Liquid-Phase%20Deposited%20Nano-Patterned%20Sapphire%20Substrates&rft.jtitle=IEEE%20photonics%20technology%20letters&rft.au=Hsieh,%20Cheng-Yu&rft.date=2012-12-15&rft.volume=24&rft.issue=24&rft.spage=2232&rft.epage=2234&rft.pages=2232-2234&rft.issn=1041-1135&rft.eissn=1941-0174&rft.coden=IPTLEL&rft_id=info:doi/10.1109/LPT.2012.2224855&rft_dat=%3Ccrossref_RIE%3E10_1109_LPT_2012_2224855%3C/crossref_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=6330988&rfr_iscdi=true